Microsemi Corporation JANTX2N6212
- Part Number:
- JANTX2N6212
- Manufacturer:
- Microsemi Corporation
- Ventron No:
- 2470556-JANTX2N6212
- Description:
- TRANS PNP 300V 2A TO-66
- Datasheet:
- JANTX2N6212
Microsemi Corporation JANTX2N6212 technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation JANTX2N6212.
- Lifecycle StatusIN PRODUCTION (Last Updated: 1 month ago)
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-213AA, TO-66-2
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~200°C TJ
- PackagingBulk
- SeriesMilitary, MIL-PRF-19500/461
- Published2002
- JESD-609 Codee0
- Pbfree Codeno
- Part StatusDiscontinued
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- ECCN CodeEAR99
- Terminal FinishTin/Lead (Sn/Pb)
- SubcategoryOther Transistors
- Max Power Dissipation3W
- Terminal PositionBOTTOM
- Terminal FormPIN/PEG
- Pin Count3
- JESD-30 CodeO-MBFM-P2
- Qualification StatusQualified
- Number of Elements1
- ConfigurationSINGLE
- Power Dissipation3W
- Case ConnectionCOLLECTOR
- Transistor ApplicationSWITCHING
- Polarity/Channel TypePNP
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)300V
- Max Collector Current2A
- DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 1A 5V
- Current - Collector Cutoff (Max)5mA
- Vce Saturation (Max) @ Ib, Ic1.6V @ 125mA, 1A
- Transition Frequency20MHz
- Collector Base Voltage (VCBO)350V
- Emitter Base Voltage (VEBO)6V
- Radiation HardeningNo
- RoHS StatusNon-RoHS Compliant
JANTX2N6212 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 30 @ 1A 5V.When VCE saturation is 1.6V @ 125mA, 1A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 6V can achieve high levels of efficiency.In the part, the transition frequency is 20MHz.A maximum collector current of 2A volts can be achieved.
JANTX2N6212 Features
the DC current gain for this device is 30 @ 1A 5V
the vce saturation(Max) is 1.6V @ 125mA, 1A
the emitter base voltage is kept at 6V
a transition frequency of 20MHz
JANTX2N6212 Applications
There are a lot of Microsemi Corporation
JANTX2N6212 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 30 @ 1A 5V.When VCE saturation is 1.6V @ 125mA, 1A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 6V can achieve high levels of efficiency.In the part, the transition frequency is 20MHz.A maximum collector current of 2A volts can be achieved.
JANTX2N6212 Features
the DC current gain for this device is 30 @ 1A 5V
the vce saturation(Max) is 1.6V @ 125mA, 1A
the emitter base voltage is kept at 6V
a transition frequency of 20MHz
JANTX2N6212 Applications
There are a lot of Microsemi Corporation
JANTX2N6212 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
JANTX2N6212 More Descriptions
Trans GP BJT PNP 300V 2A 3000mW 3-Pin(2 Tab) TO-66 Tray
Non-Compliant Through Hole PNP Bulk TO-66 3 Production (Last Updated: 1 month ago)
TRANS PNP 300V 2A TO66
Power BJT _ TO-66
JANTX2N6212 --
Non-Compliant Through Hole PNP Bulk TO-66 3 Production (Last Updated: 1 month ago)
TRANS PNP 300V 2A TO66
Power BJT _ TO-66
JANTX2N6212 --
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