JANTX2N6212

Microsemi Corporation JANTX2N6212

Part Number:
JANTX2N6212
Manufacturer:
Microsemi Corporation
Ventron No:
2470556-JANTX2N6212
Description:
TRANS PNP 300V 2A TO-66
ECAD Model:
Datasheet:
JANTX2N6212

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Specifications
Microsemi Corporation JANTX2N6212 technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation JANTX2N6212.
  • Lifecycle Status
    IN PRODUCTION (Last Updated: 1 month ago)
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-213AA, TO-66-2
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~200°C TJ
  • Packaging
    Bulk
  • Series
    Military, MIL-PRF-19500/461
  • Published
    2002
  • JESD-609 Code
    e0
  • Pbfree Code
    no
  • Part Status
    Discontinued
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin/Lead (Sn/Pb)
  • Subcategory
    Other Transistors
  • Max Power Dissipation
    3W
  • Terminal Position
    BOTTOM
  • Terminal Form
    PIN/PEG
  • Pin Count
    3
  • JESD-30 Code
    O-MBFM-P2
  • Qualification Status
    Qualified
  • Number of Elements
    1
  • Configuration
    SINGLE
  • Power Dissipation
    3W
  • Case Connection
    COLLECTOR
  • Transistor Application
    SWITCHING
  • Polarity/Channel Type
    PNP
  • Transistor Type
    PNP
  • Collector Emitter Voltage (VCEO)
    300V
  • Max Collector Current
    2A
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    30 @ 1A 5V
  • Current - Collector Cutoff (Max)
    5mA
  • Vce Saturation (Max) @ Ib, Ic
    1.6V @ 125mA, 1A
  • Transition Frequency
    20MHz
  • Collector Base Voltage (VCBO)
    350V
  • Emitter Base Voltage (VEBO)
    6V
  • Radiation Hardening
    No
  • RoHS Status
    Non-RoHS Compliant
Description
JANTX2N6212 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 30 @ 1A 5V.When VCE saturation is 1.6V @ 125mA, 1A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 6V can achieve high levels of efficiency.In the part, the transition frequency is 20MHz.A maximum collector current of 2A volts can be achieved.

JANTX2N6212 Features
the DC current gain for this device is 30 @ 1A 5V
the vce saturation(Max) is 1.6V @ 125mA, 1A
the emitter base voltage is kept at 6V
a transition frequency of 20MHz


JANTX2N6212 Applications
There are a lot of Microsemi Corporation
JANTX2N6212 applications of single BJT transistors.


Inverter
Interface
Driver
Muting
JANTX2N6212 More Descriptions
Trans GP BJT PNP 300V 2A 3000mW 3-Pin(2 Tab) TO-66 Tray
Non-Compliant Through Hole PNP Bulk TO-66 3 Production (Last Updated: 1 month ago)
TRANS PNP 300V 2A TO66
Power BJT _ TO-66
JANTX2N6212 --
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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