Microsemi Corporation JANTX2N5660

Name: JANTX2N5660
Brand: Microsemi Corporation
SKU: 2470740-JANTX2N5660
Availability: InStock
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Part Number:: JANTX2N5660

Manufacturer:: Microsemi Corporation

Ventron No:: 2470740-JANTX2N5660

Description:: TRANS NPN 200V 2A TO-66

ECAD Model:

Datasheet:: JANTX2N5660

Specifications

Microsemi Corporation JANTX2N5660 technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation JANTX2N5660.

Lifecycle Status
IN PRODUCTION (Last Updated: 3 weeks ago)
Factory Lead Time
20 Weeks
Mount
Through Hole
Mounting Type
Surface Mount
Package / Case
TO-213AA, TO-66-2
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-65°C~200°C TJ
Packaging
Bulk
Series
Military, MIL-PRF-19500/454
Published
2007
JESD-609 Code
e0
Pbfree Code
no
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Terminal Finish
Tin/Lead (Sn/Pb)
Subcategory
Other Transistors
Max Power Dissipation
2W
Terminal Position
BOTTOM
Terminal Form
PIN/PEG
Pin Count
3
JESD-30 Code
O-MBFM-P2
Qualification Status
Qualified
Number of Elements
1
Configuration
SINGLE
Power Dissipation
2W
Case Connection
COLLECTOR
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
200V
Max Collector Current
2A
DC Current Gain (hFE) (Min) @ Ic, Vce
40 @ 500mA 5V
Current - Collector Cutoff (Max)
200nA
Vce Saturation (Max) @ Ib, Ic
800mV @ 400mA, 2A
Transition Frequency
20MHz
Collector Base Voltage (VCBO)
250V
Emitter Base Voltage (VEBO)
6V
Radiation Hardening
No
RoHS Status
Non-RoHS Compliant

Description

JANTX2N5660 Overview
DC current gain in this device equals 40 @ 500mA 5V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 800mV @ 400mA, 2A.An emitter's base voltage can be kept at 6V to gain high efficiency.As a result, the part has a transition frequency of 20MHz.In extreme cases, the collector current can be as low as 2A volts.

JANTX2N5660 Features
the DC current gain for this device is 40 @ 500mA 5V
the vce saturation(Max) is 800mV @ 400mA, 2A
the emitter base voltage is kept at 6V
a transition frequency of 20MHz

JANTX2N5660 Applications
There are a lot of Microsemi Corporation
JANTX2N5660 applications of single BJT transistors.

Inverter
Interface
Driver
Muting

JANTX2N5660 More Descriptions

Trans GP BJT NPN 200V 2A 2000mW 3-Pin(2 Tab) TO-66 Tray
Non-Compliant Through Hole NPN Bulk TO-66 3 Production (Last Updated: 1 month ago)
TRANS NPN 200V 2A TO66
Power BJT _ TO-66
JANTX2N5660 --

Certification