Microsemi Corporation JANTX2N5416S
- Part Number:
- JANTX2N5416S
- Manufacturer:
- Microsemi Corporation
- Ventron No:
- 2465240-JANTX2N5416S
- Description:
- TRANS PNP 300V 1A TO-39
- ECAD Model:
-
- Datasheet:
- JANTX2N5416S
Microsemi Corporation JANTX2N5416S technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation JANTX2N5416S.
- Lifecycle StatusIN PRODUCTION (Last Updated: 3 weeks ago)
- Factory Lead Time20 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-205AD, TO-39-3 Metal Can
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-65°C~200°C TJ
- PackagingBulk
- SeriesMilitary, MIL-PRF-19500/485
- Published1996
- JESD-609 Codee0
- Pbfree Codeno
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations4
- ECCN CodeEAR99
- Terminal FinishTin/Lead (Sn/Pb)
- Max Power Dissipation750mW
- Terminal PositionBOTTOM
- Terminal FormWIRE
- Pin Count3
- JESD-30 CodeO-MBCY-W4
- Qualification StatusQualified
- Number of Elements1
- ConfigurationSINGLE
- Power Dissipation750mW
- Case ConnectionCOLLECTOR
- Transistor ApplicationSWITCHING
- Polarity/Channel TypePNP
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)300V
- Max Collector Current1A
- DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 50mA 10V
- Current - Collector Cutoff (Max)1mA
- JEDEC-95 CodeTO-5
- Vce Saturation (Max) @ Ib, Ic2V @ 5mA, 50mA
- Collector Base Voltage (VCBO)350V
- Emitter Base Voltage (VEBO)6V
- Radiation HardeningNo
- RoHS StatusNon-RoHS Compliant
JANTX2N5416S Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 30 @ 50mA 10V.When VCE saturation is 2V @ 5mA, 50mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 6V can achieve high levels of efficiency.A maximum collector current of 1A volts can be achieved.
JANTX2N5416S Features
the DC current gain for this device is 30 @ 50mA 10V
the vce saturation(Max) is 2V @ 5mA, 50mA
the emitter base voltage is kept at 6V
JANTX2N5416S Applications
There are a lot of Microsemi Corporation
JANTX2N5416S applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 30 @ 50mA 10V.When VCE saturation is 2V @ 5mA, 50mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 6V can achieve high levels of efficiency.A maximum collector current of 1A volts can be achieved.
JANTX2N5416S Features
the DC current gain for this device is 30 @ 50mA 10V
the vce saturation(Max) is 2V @ 5mA, 50mA
the emitter base voltage is kept at 6V
JANTX2N5416S Applications
There are a lot of Microsemi Corporation
JANTX2N5416S applications of single BJT transistors.
Inverter
Interface
Driver
Muting
JANTX2N5416S More Descriptions
Small Signal Bipolar Transistor, 1A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon, TO-5
Trans GP BJT PNP 300V 1A 750mW 3-Pin TO-39 Bag
Power Bjt To-39 Rohs Compliant: Yes |Microchip JANTX2N5416S
Trans GP BJT PNP 300V 1A 750mW 3-Pin TO-39 Bag
Power Bjt To-39 Rohs Compliant: Yes |Microchip JANTX2N5416S
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