Microsemi Corporation JANTX2N5415
- Part Number:
- JANTX2N5415
- Manufacturer:
- Microsemi Corporation
- Ventron No:
- 2465512-JANTX2N5415
- Description:
- TRANS PNP 200V 1A TO-5
- ECAD Model:
-
- Datasheet:
- JANTX2N5415
Microsemi Corporation JANTX2N5415 technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation JANTX2N5415.
- Factory Lead Time20 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-205AA, TO-5-3 Metal Can
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-65°C~200°C TJ
- PackagingBulk
- SeriesMilitary, MIL-PRF-19500/485
- Published2007
- JESD-609 Codee0
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations4
- ECCN CodeEAR99
- Terminal FinishTin/Lead (Sn/Pb)
- Max Power Dissipation750mW
- Terminal PositionBOTTOM
- Terminal FormWIRE
- Reference StandardMILITARY STANDARD (USA)
- JESD-30 CodeO-MBCY-W4
- Qualification StatusQualified
- Number of Elements1
- ConfigurationSINGLE
- Power Dissipation750mW
- Case ConnectionCOLLECTOR
- Transistor ApplicationSWITCHING
- Polarity/Channel TypePNP
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)200V
- Max Collector Current1A
- DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 50mA 10V
- Current - Collector Cutoff (Max)1mA
- Vce Saturation (Max) @ Ib, Ic2V @ 5mA, 50mA
- Collector Base Voltage (VCBO)200V
- Emitter Base Voltage (VEBO)6V
- Radiation HardeningNo
- RoHS StatusNon-RoHS Compliant
JANTX2N5415 Overview
This device has a DC current gain of 30 @ 50mA 10V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 6V to achieve high efficiency.The maximum collector current is 1A volts.
JANTX2N5415 Features
the DC current gain for this device is 30 @ 50mA 10V
the vce saturation(Max) is 2V @ 5mA, 50mA
the emitter base voltage is kept at 6V
JANTX2N5415 Applications
There are a lot of Microsemi Corporation
JANTX2N5415 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
This device has a DC current gain of 30 @ 50mA 10V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 6V to achieve high efficiency.The maximum collector current is 1A volts.
JANTX2N5415 Features
the DC current gain for this device is 30 @ 50mA 10V
the vce saturation(Max) is 2V @ 5mA, 50mA
the emitter base voltage is kept at 6V
JANTX2N5415 Applications
There are a lot of Microsemi Corporation
JANTX2N5415 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
JANTX2N5415 More Descriptions
Trans GP BJT PNP 200V 1A 3-Pin TO-5
Power Bjt To-5 Rohs Compliant: Yes |Microchip JANTX2N5415
Power BJT _ TO-5
Power Bjt To-5 Rohs Compliant: Yes |Microchip JANTX2N5415
Power BJT _ TO-5
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