Microsemi Corporation JANTX2N4261

Name: JANTX2N4261
Brand: Microsemi Corporation
SKU: 2465245-JANTX2N4261
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: JANTX2N4261

Manufacturer:: Microsemi Corporation

Ventron No:: 2465245-JANTX2N4261

Description:: TRANS PNP 15V 0.03A TO-72

ECAD Model:

Datasheet:: JANTX2N4261

Specifications

Microsemi Corporation JANTX2N4261 technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation JANTX2N4261.

Lifecycle Status
IN PRODUCTION (Last Updated: 1 month ago)
Factory Lead Time
23 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-72-3 Metal Can
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-65°C~200°C TJ
Packaging
Bulk
Series
Military, MIL-PRF-19500/511
Published
2007
JESD-609 Code
e0
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
ECCN Code
EAR99
Terminal Finish
TIN LEAD
Subcategory
Other Transistors
Max Power Dissipation
200mW
Terminal Position
BOTTOM
Terminal Form
WIRE
Pin Count
4
JESD-30 Code
O-MBCY-W4
Qualification Status
Qualified
Number of Elements
1
Configuration
SINGLE
Power Dissipation
200mW
Transistor Application
SWITCHING
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
15V
Max Collector Current
30mA
DC Current Gain (hFE) (Min) @ Ic, Vce
30 @ 10mA 1V
Current - Collector Cutoff (Max)
10μA ICBO
Vce Saturation (Max) @ Ib, Ic
350mV @ 1mA, 10mA
Transition Frequency
2000MHz
Collector Base Voltage (VCBO)
15V
Emitter Base Voltage (VEBO)
4.5V
Collector-Base Capacitance-Max
2.5pF
Radiation Hardening
No
RoHS Status
Non-RoHS Compliant

Description

JANTX2N4261 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 30 @ 10mA 1V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 350mV @ 1mA, 10mA.The emitter base voltage can be kept at 4.5V for high efficiency.The part has a transition frequency of 2000MHz.Single BJT transistor is possible to have a collector current as low as 30mA volts at Single BJT transistors maximum.

JANTX2N4261 Features
the DC current gain for this device is 30 @ 10mA 1V
the vce saturation(Max) is 350mV @ 1mA, 10mA
the emitter base voltage is kept at 4.5V
a transition frequency of 2000MHz

JANTX2N4261 Applications
There are a lot of Microsemi Corporation
JANTX2N4261 applications of single BJT transistors.

Inverter
Interface
Driver
Muting

JANTX2N4261 More Descriptions

Non-Compliant Through Hole PNP Bulk TO-72 3 Production (Last Updated: 1 month ago)
Trans GP BJT PNP 15V 0.03A 200mW 3-Pin TO-72 Bag
TRANS PNP 15V 0.03A TO72
JANTX2N4261 --

Certification