Microsemi Corporation JANTX2N4150
- Part Number:
- JANTX2N4150
- Manufacturer:
- Microsemi Corporation
- Ventron No:
- 2466408-JANTX2N4150
- Description:
- TRANS NPN 70V 10A TO-5
- Datasheet:
- JANTX2N4150
Microsemi Corporation JANTX2N4150 technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation JANTX2N4150.
- Lifecycle StatusIN PRODUCTION (Last Updated: 1 month ago)
- Factory Lead Time20 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-205AA, TO-5-3 Metal Can
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-65°C~200°C TJ
- PackagingBulk
- SeriesMilitary, MIL-PRF-19500/394
- Published2007
- JESD-609 Codee0
- Pbfree Codeno
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin/Lead (Sn/Pb)
- SubcategoryOther Transistors
- Max Power Dissipation1W
- Terminal PositionBOTTOM
- Terminal FormWIRE
- Pin Count3
- Qualification StatusQualified
- Number of Elements1
- ConfigurationSINGLE
- Power Dissipation1W
- Case ConnectionCOLLECTOR
- Transistor ApplicationSWITCHING
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)70V
- Max Collector Current10A
- DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 5A 5V
- Current - Collector Cutoff (Max)10μA
- Vce Saturation (Max) @ Ib, Ic2.5V @ 1A, 10A
- Transition Frequency15MHz
- Collector Base Voltage (VCBO)100V
- Emitter Base Voltage (VEBO)10V
- Turn Off Time-Max (toff)2000ns
- Turn On Time-Max (ton)550ns
- Radiation HardeningNo
- RoHS StatusNon-RoHS Compliant
- Lead FreeContains Lead
JANTX2N4150 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 40 @ 5A 5V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 2.5V @ 1A, 10A.If the emitter base voltage is kept at 10V, a high level of efficiency can be achieved.A transition frequency of 15MHz is present in the part.Collector current can be as low as 10A volts at its maximum.
JANTX2N4150 Features
the DC current gain for this device is 40 @ 5A 5V
the vce saturation(Max) is 2.5V @ 1A, 10A
the emitter base voltage is kept at 10V
a transition frequency of 15MHz
JANTX2N4150 Applications
There are a lot of Microsemi Corporation
JANTX2N4150 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 40 @ 5A 5V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 2.5V @ 1A, 10A.If the emitter base voltage is kept at 10V, a high level of efficiency can be achieved.A transition frequency of 15MHz is present in the part.Collector current can be as low as 10A volts at its maximum.
JANTX2N4150 Features
the DC current gain for this device is 40 @ 5A 5V
the vce saturation(Max) is 2.5V @ 1A, 10A
the emitter base voltage is kept at 10V
a transition frequency of 15MHz
JANTX2N4150 Applications
There are a lot of Microsemi Corporation
JANTX2N4150 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
JANTX2N4150 More Descriptions
Small Signal Bipolar Transistor, 10A I(C), 70V V(BR)CEO, 1-Element, NPN, Silicon, TO-5
2N4150 Series 70 V 10 A Through Hole NPN Power Silicon Transistor - TO-5
Trans GP BJT NPN 70V 10A 1000mW 3-Pin TO-5 Bag
Power Bjt To-5 Rohs Compliant: Yes |Microchip JANTX2N4150
2N4150 Series 70 V 10 A Through Hole NPN Power Silicon Transistor - TO-5
Trans GP BJT NPN 70V 10A 1000mW 3-Pin TO-5 Bag
Power Bjt To-5 Rohs Compliant: Yes |Microchip JANTX2N4150
Popular Search Part Number
Related Keywords
Search Tags
Latest News
-
09 April 2024
INA826AIDR Layout and Selection Guide
Ⅰ. Description of INA826AIDRⅡ. Pin configuration and functionsⅢ. Functional features of INA826AIDRⅣ. What impact does external resistance have on the stability of INA826AIDR?Ⅴ. Schematic diagram and working principle... -
10 April 2024
LM2904DT Dual Operational Amplifier: Features, Package and Specifications
Ⅰ. Overview of LM2904DTⅡ. Electrical characteristic curvesⅢ. Features of LM2904DTⅣ. Package of LM2904DTⅤ. Supply voltage and current requirements of LM2904DTⅥ. Specifications of LM2904DTⅦ. How to use LM2904DT in... -
10 April 2024
STM32F103CBT6 Microcontroller Features, Application and STM32F103CBT6 vs CKS32F103C8T6
Ⅰ. Description of STM32F103CBT6Ⅱ. Low-power modes of STM32F103CBT6Ⅲ. Functional features of STM32F103CBT6Ⅳ. Application fields of STM32F103CBT6Ⅴ. GPIO attributes and configuration process of STM32F103CBT6Ⅵ. How to program and debug... -
11 April 2024
A Complete Guide to IR2104 Half-Bridge Driver
Ⅰ. IR2104 descriptionⅡ. IR2104 half-bridge driver circuit characteristicsⅢ. IR2104 half-bridge driver working principleⅣ. Practical application of IR2104Ⅴ. Recommended operating conditions of IR2104Ⅵ. What are the heat dissipation measures...
Help you to save your cost and time.
Reliable package for your goods.
Fast Reliable Delivery to save time.
Quality premium after-sale service.