JANTX2N4150

Microsemi Corporation JANTX2N4150

Part Number:
JANTX2N4150
Manufacturer:
Microsemi Corporation
Ventron No:
2466408-JANTX2N4150
Description:
TRANS NPN 70V 10A TO-5
ECAD Model:
Datasheet:
JANTX2N4150

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Specifications
Microsemi Corporation JANTX2N4150 technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation JANTX2N4150.
  • Lifecycle Status
    IN PRODUCTION (Last Updated: 1 month ago)
  • Factory Lead Time
    20 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-205AA, TO-5-3 Metal Can
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -65°C~200°C TJ
  • Packaging
    Bulk
  • Series
    Military, MIL-PRF-19500/394
  • Published
    2007
  • JESD-609 Code
    e0
  • Pbfree Code
    no
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin/Lead (Sn/Pb)
  • Subcategory
    Other Transistors
  • Max Power Dissipation
    1W
  • Terminal Position
    BOTTOM
  • Terminal Form
    WIRE
  • Pin Count
    3
  • Qualification Status
    Qualified
  • Number of Elements
    1
  • Configuration
    SINGLE
  • Power Dissipation
    1W
  • Case Connection
    COLLECTOR
  • Transistor Application
    SWITCHING
  • Polarity/Channel Type
    NPN
  • Transistor Type
    NPN
  • Collector Emitter Voltage (VCEO)
    70V
  • Max Collector Current
    10A
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    40 @ 5A 5V
  • Current - Collector Cutoff (Max)
    10μA
  • Vce Saturation (Max) @ Ib, Ic
    2.5V @ 1A, 10A
  • Transition Frequency
    15MHz
  • Collector Base Voltage (VCBO)
    100V
  • Emitter Base Voltage (VEBO)
    10V
  • Turn Off Time-Max (toff)
    2000ns
  • Turn On Time-Max (ton)
    550ns
  • Radiation Hardening
    No
  • RoHS Status
    Non-RoHS Compliant
  • Lead Free
    Contains Lead
Description
JANTX2N4150 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 40 @ 5A 5V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 2.5V @ 1A, 10A.If the emitter base voltage is kept at 10V, a high level of efficiency can be achieved.A transition frequency of 15MHz is present in the part.Collector current can be as low as 10A volts at its maximum.

JANTX2N4150 Features
the DC current gain for this device is 40 @ 5A 5V
the vce saturation(Max) is 2.5V @ 1A, 10A
the emitter base voltage is kept at 10V
a transition frequency of 15MHz


JANTX2N4150 Applications
There are a lot of Microsemi Corporation
JANTX2N4150 applications of single BJT transistors.


Inverter
Interface
Driver
Muting
JANTX2N4150 More Descriptions
Small Signal Bipolar Transistor, 10A I(C), 70V V(BR)CEO, 1-Element, NPN, Silicon, TO-5
2N4150 Series 70 V 10 A Through Hole NPN Power Silicon Transistor - TO-5
Trans GP BJT NPN 70V 10A 1000mW 3-Pin TO-5 Bag
Power Bjt To-5 Rohs Compliant: Yes |Microchip JANTX2N4150
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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