Microsemi Corporation JANTX2N3868S

Name: JANTX2N3868S
Brand: Microsemi Corporation
SKU: 2466376-JANTX2N3868S
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: JANTX2N3868S

Manufacturer:: Microsemi Corporation

Ventron No:: 2466376-JANTX2N3868S

Description:: TRANS PNP 60V 0.003A TO39

ECAD Model:

Datasheet:: JANTX2N3868S

Specifications

Microsemi Corporation JANTX2N3868S technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation JANTX2N3868S.

Lifecycle Status
IN PRODUCTION (Last Updated: 1 month ago)
Factory Lead Time
20 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-205AD, TO-39-3 Metal Can
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-65°C~200°C TJ
Packaging
Bulk
Series
Military, MIL-PRF-19500/350
Published
2007
JESD-609 Code
e0
Pbfree Code
no
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin/Lead (Sn/Pb)
Max Power Dissipation
1W
Terminal Position
BOTTOM
Terminal Form
WIRE
Pin Count
2
Qualification Status
Qualified
Number of Elements
1
Configuration
SINGLE
Power Dissipation
1W
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
60V
Max Collector Current
3A
DC Current Gain (hFE) (Min) @ Ic, Vce
30 @ 1.5A 2V
Current - Collector Cutoff (Max)
100μA ICBO
Vce Saturation (Max) @ Ib, Ic
1.5V @ 250mA, 2.5A
Collector Base Voltage (VCBO)
60V
Emitter Base Voltage (VEBO)
4V
Turn Off Time-Max (toff)
600ns
Radiation Hardening
No
RoHS Status
Non-RoHS Compliant

Description

JANTX2N3868S Overview
This device has a DC current gain of 30 @ 1.5A 2V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 4V to achieve high efficiency.The maximum collector current is 3A volts.

JANTX2N3868S Features
the DC current gain for this device is 30 @ 1.5A 2V
the vce saturation(Max) is 1.5V @ 250mA, 2.5A
the emitter base voltage is kept at 4V

JANTX2N3868S Applications
There are a lot of Microsemi Corporation
JANTX2N3868S applications of single BJT transistors.

Inverter
Interface
Driver
Muting

JANTX2N3868S More Descriptions

Military MIL-PRF-19500/350 Bulk Through Hole PNP Bipolar (BJT) Transistor 30 @ 1.5A 2V 100muA ICBO 1W 600ns
Trans GP BJT PNP 60V 0.03A 1000mW 3-Pin TO-39 Bag
Power BJT _ TO-39
TRANS PNP 60V 0.003A TO39
OEMs, CMs ONLY (NO BROKERS)
JANTX2N3868S --

Certification