JANTX2N3868

Aeroflex Metelics, Division of MACOM JANTX2N3868

Part Number:
JANTX2N3868
Manufacturer:
Aeroflex Metelics, Division of MACOM
Ventron No:
3069023-JANTX2N3868
Description:
DIODE
ECAD Model:
Datasheet:
Short Form Catalog 2014~

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Specifications
Aeroflex Metelics, Division of MACOM JANTX2N3868 technical specifications, attributes, parameters and parts with similar specifications to Aeroflex Metelics, Division of MACOM JANTX2N3868.
  • Lifecycle Status
    IN PRODUCTION (Last Updated: 3 weeks ago)
  • Factory Lead Time
    20 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-205AA, TO-5-3 Metal Can
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -65°C~200°C TJ
  • Packaging
    Bulk
  • Series
    Military, MIL-PRF-19500/350
  • Published
    2007
  • JESD-609 Code
    e0
  • Pbfree Code
    no
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin/Lead (Sn/Pb)
  • Max Power Dissipation
    1W
  • Terminal Position
    BOTTOM
  • Terminal Form
    WIRE
  • Qualification Status
    Qualified
  • Number of Elements
    1
  • Configuration
    SINGLE
  • Power Dissipation
    1W
  • Case Connection
    COLLECTOR
  • Transistor Application
    SWITCHING
  • Polarity/Channel Type
    PNP
  • Transistor Type
    PNP
  • Collector Emitter Voltage (VCEO)
    60V
  • Max Collector Current
    3mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    30 @ 1.5A 2V
  • Current - Collector Cutoff (Max)
    100μA ICBO
  • Vce Saturation (Max) @ Ib, Ic
    1.5V @ 250mA, 2.5A
  • Collector Emitter Breakdown Voltage
    60V
  • Current - Collector (Ic) (Max)
    3A
  • Collector Base Voltage (VCBO)
    60V
  • Emitter Base Voltage (VEBO)
    4V
  • Turn Off Time-Max (toff)
    600ns
  • Radiation Hardening
    No
  • RoHS Status
    Non-RoHS Compliant
  • Lead Free
    Contains Lead
Description
JANTX2N3868 Overview
This device has a DC current gain of 30 @ 1.5A 2V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 1.5V @ 250mA, 2.5A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 4V.A maximum collector current of 3mA volts is possible.

JANTX2N3868 Features
the DC current gain for this device is 30 @ 1.5A 2V
the vce saturation(Max) is 1.5V @ 250mA, 2.5A
the emitter base voltage is kept at 4V


JANTX2N3868 Applications
There are a lot of Microsemi Corporation
JANTX2N3868 applications of single BJT transistors.


Inverter
Interface
Driver
Muting
JANTX2N3868 More Descriptions
Small Signal Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-5
JANTX Series 60 V 3 A PNP Through Hole Silicon Low Power Transistor - TO-5
PNP Silicon Low Power Transistor 60VDC 3-Pin TO-5 Bag
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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