Microsemi Corporation JANTX2N3763
- Part Number:
- JANTX2N3763
- Manufacturer:
- Microsemi Corporation
- Ventron No:
- 2470501-JANTX2N3763
- Description:
- TRANSISTOR PNP TO-39
- ECAD Model:
-
- Datasheet:
- JANTX2N3763
Microsemi Corporation JANTX2N3763 technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation JANTX2N3763.
- Lifecycle StatusIN PRODUCTION (Last Updated: 1 month ago)
- Factory Lead Time20 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-205AD, TO-39-3 Metal Can
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~200°C TJ
- PackagingBulk
- SeriesMilitary, MIL-PRF-19500/396
- Published2002
- JESD-609 Codee0
- Pbfree Codeno
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin/Lead (Sn/Pb)
- SubcategoryOther Transistors
- Max Power Dissipation1W
- Terminal PositionBOTTOM
- Terminal FormWIRE
- Pin Count2
- Qualification StatusQualified
- Number of Elements1
- ConfigurationSINGLE
- Power Dissipation1W
- Case ConnectionCOLLECTOR
- Transistor ApplicationSWITCHING
- Polarity/Channel TypePNP
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)60V
- Max Collector Current1.5A
- DC Current Gain (hFE) (Min) @ Ic, Vce20 @ 1A 1.5V
- Current - Collector Cutoff (Max)10μA ICBO
- Vce Saturation (Max) @ Ib, Ic900mV @ 100mA, 1A
- Transition Frequency150MHz
- Collector Base Voltage (VCBO)60V
- Emitter Base Voltage (VEBO)5V
- Radiation HardeningNo
- RoHS StatusNon-RoHS Compliant
JANTX2N3763 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 20 @ 1A 1.5V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 900mV @ 100mA, 1A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.A transition frequency of 150MHz is present in the part.Collector current can be as low as 1.5A volts at its maximum.
JANTX2N3763 Features
the DC current gain for this device is 20 @ 1A 1.5V
the vce saturation(Max) is 900mV @ 100mA, 1A
the emitter base voltage is kept at 5V
a transition frequency of 150MHz
JANTX2N3763 Applications
There are a lot of Microsemi Corporation
JANTX2N3763 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 20 @ 1A 1.5V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 900mV @ 100mA, 1A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.A transition frequency of 150MHz is present in the part.Collector current can be as low as 1.5A volts at its maximum.
JANTX2N3763 Features
the DC current gain for this device is 20 @ 1A 1.5V
the vce saturation(Max) is 900mV @ 100mA, 1A
the emitter base voltage is kept at 5V
a transition frequency of 150MHz
JANTX2N3763 Applications
There are a lot of Microsemi Corporation
JANTX2N3763 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
JANTX2N3763 More Descriptions
Power Bipolar Transistor, 1.5A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-39, Metal, 3 Pin
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