Microsemi Corporation JANTX2N3735
- Part Number:
- JANTX2N3735
- Manufacturer:
- Microsemi Corporation
- Ventron No:
- 3069152-JANTX2N3735
- Description:
- TRANS NPN 40V 1.5A
- ECAD Model:
-
- Datasheet:
- JANTX2N3735
Microsemi Corporation JANTX2N3735 technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation JANTX2N3735.
- Lifecycle StatusIN PRODUCTION (Last Updated: 3 weeks ago)
- Factory Lead Time23 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-205AD, TO-39-3 Metal Can
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-65°C~200°C TJ
- PackagingBulk
- SeriesMilitary, MIL-PRF-19500/395
- JESD-609 Codee0
- Pbfree Codeno
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin/Lead (Sn/Pb)
- Max Power Dissipation1W
- Terminal PositionBOTTOM
- Terminal FormWIRE
- Frequency250MHz
- Qualification StatusQualified
- Number of Elements1
- ConfigurationSINGLE
- Power Dissipation1W
- Transistor ApplicationSWITCHING
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)40V
- Max Collector Current1.5A
- DC Current Gain (hFE) (Min) @ Ic, Vce20 @ 1A 1.5V
- Current - Collector Cutoff (Max)10μA
- Vce Saturation (Max) @ Ib, Ic900mV @ 100mA, 1A
- Collector Emitter Breakdown Voltage40V
- Collector Base Voltage (VCBO)75V
- Emitter Base Voltage (VEBO)5V
- Turn Off Time-Max (toff)60ns
- Turn On Time-Max (ton)48ns
- Radiation HardeningNo
- RoHS StatusNon-RoHS Compliant
- Lead FreeContains Lead
JANTX2N3735 Overview
This device has a DC current gain of 20 @ 1A 1.5V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 900mV @ 100mA, 1A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.A maximum collector current of 1.5A volts is possible.
JANTX2N3735 Features
the DC current gain for this device is 20 @ 1A 1.5V
the vce saturation(Max) is 900mV @ 100mA, 1A
the emitter base voltage is kept at 5V
JANTX2N3735 Applications
There are a lot of Microsemi Corporation
JANTX2N3735 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
This device has a DC current gain of 20 @ 1A 1.5V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 900mV @ 100mA, 1A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.A maximum collector current of 1.5A volts is possible.
JANTX2N3735 Features
the DC current gain for this device is 20 @ 1A 1.5V
the vce saturation(Max) is 900mV @ 100mA, 1A
the emitter base voltage is kept at 5V
JANTX2N3735 Applications
There are a lot of Microsemi Corporation
JANTX2N3735 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
JANTX2N3735 More Descriptions
Trans GP BJT NPN 40V 1.5A 3-Pin TO-39
Small-Signal BJT _ TO-39
Transistors NPN Silicon Switching 40V 1.5A TO-39
OEMs, CMs ONLY (NO BROKERS)
JANTX2N3735 --
Small-Signal BJT _ TO-39
Transistors NPN Silicon Switching 40V 1.5A TO-39
OEMs, CMs ONLY (NO BROKERS)
JANTX2N3735 --
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