Aeroflex Metelics, Division of MACOM JANTX2N3716
- Part Number:
- JANTX2N3716
- Manufacturer:
- Aeroflex Metelics, Division of MACOM
- Ventron No:
- 2463414-JANTX2N3716
- Description:
- DIODE
- Datasheet:
- 2N3715,16~
Aeroflex Metelics, Division of MACOM JANTX2N3716 technical specifications, attributes, parameters and parts with similar specifications to Aeroflex Metelics, Division of MACOM JANTX2N3716.
- Lifecycle StatusIN PRODUCTION (Last Updated: 4 weeks ago)
- Factory Lead Time20 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-204AA, TO-3
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-65°C~200°C TJ
- PackagingBulk
- SeriesMilitary, MIL-PRF-19500/408
- JESD-609 Codee0
- Pbfree Codeno
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- ECCN CodeEAR99
- Terminal FinishTin/Lead (Sn/Pb)
- SubcategoryOther Transistors
- Max Power Dissipation5W
- Terminal PositionBOTTOM
- Terminal FormPIN/PEG
- Pin Count2
- Reference StandardMIL
- JESD-30 CodeO-MBFM-P2
- Qualification StatusQualified
- Number of Elements1
- ConfigurationSINGLE
- Power Dissipation5W
- Case ConnectionCOLLECTOR
- Transistor ApplicationSWITCHING
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)80V
- Max Collector Current10A
- DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 3A 2V
- Current - Collector Cutoff (Max)1mA
- Vce Saturation (Max) @ Ib, Ic2.5V @ 2A, 10A
- Transition Frequency2.5MHz
- Collector Base Voltage (VCBO)100V
- Emitter Base Voltage (VEBO)7V
- Radiation HardeningNo
- RoHS StatusNon-RoHS Compliant
- Lead FreeContains Lead
JANTX2N3716 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 30 @ 3A 2V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 2.5V @ 2A, 10A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 7V.Parts of this part have transition frequencies of 2.5MHz.During maximum operation, collector current can be as low as 10A volts.
JANTX2N3716 Features
the DC current gain for this device is 30 @ 3A 2V
the vce saturation(Max) is 2.5V @ 2A, 10A
the emitter base voltage is kept at 7V
a transition frequency of 2.5MHz
JANTX2N3716 Applications
There are a lot of Microsemi Corporation
JANTX2N3716 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 30 @ 3A 2V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 2.5V @ 2A, 10A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 7V.Parts of this part have transition frequencies of 2.5MHz.During maximum operation, collector current can be as low as 10A volts.
JANTX2N3716 Features
the DC current gain for this device is 30 @ 3A 2V
the vce saturation(Max) is 2.5V @ 2A, 10A
the emitter base voltage is kept at 7V
a transition frequency of 2.5MHz
JANTX2N3716 Applications
There are a lot of Microsemi Corporation
JANTX2N3716 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
JANTX2N3716 More Descriptions
Trans GP BJT NPN 80V 10A 5000mW 3-Pin(2 Tab) TO-3 Tray
JANTX Series 80 V 10 A NPN High Power Silicon Transistor - TO-3 (TO-204AA)
High Power Silicon Transistor NPN 80VDC 10A 2-Pin TO-3
JANTX Series 80 V 10 A NPN High Power Silicon Transistor - TO-3 (TO-204AA)
High Power Silicon Transistor NPN 80VDC 10A 2-Pin TO-3
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