JANTX2N3716

Aeroflex Metelics, Division of MACOM JANTX2N3716

Part Number:
JANTX2N3716
Manufacturer:
Aeroflex Metelics, Division of MACOM
Ventron No:
2463414-JANTX2N3716
Description:
DIODE
ECAD Model:
Datasheet:
2N3715,16~

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Specifications
Aeroflex Metelics, Division of MACOM JANTX2N3716 technical specifications, attributes, parameters and parts with similar specifications to Aeroflex Metelics, Division of MACOM JANTX2N3716.
  • Lifecycle Status
    IN PRODUCTION (Last Updated: 4 weeks ago)
  • Factory Lead Time
    20 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-204AA, TO-3
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -65°C~200°C TJ
  • Packaging
    Bulk
  • Series
    Military, MIL-PRF-19500/408
  • JESD-609 Code
    e0
  • Pbfree Code
    no
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin/Lead (Sn/Pb)
  • Subcategory
    Other Transistors
  • Max Power Dissipation
    5W
  • Terminal Position
    BOTTOM
  • Terminal Form
    PIN/PEG
  • Pin Count
    2
  • Reference Standard
    MIL
  • JESD-30 Code
    O-MBFM-P2
  • Qualification Status
    Qualified
  • Number of Elements
    1
  • Configuration
    SINGLE
  • Power Dissipation
    5W
  • Case Connection
    COLLECTOR
  • Transistor Application
    SWITCHING
  • Polarity/Channel Type
    NPN
  • Transistor Type
    NPN
  • Collector Emitter Voltage (VCEO)
    80V
  • Max Collector Current
    10A
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    30 @ 3A 2V
  • Current - Collector Cutoff (Max)
    1mA
  • Vce Saturation (Max) @ Ib, Ic
    2.5V @ 2A, 10A
  • Transition Frequency
    2.5MHz
  • Collector Base Voltage (VCBO)
    100V
  • Emitter Base Voltage (VEBO)
    7V
  • Radiation Hardening
    No
  • RoHS Status
    Non-RoHS Compliant
  • Lead Free
    Contains Lead
Description
JANTX2N3716 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 30 @ 3A 2V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 2.5V @ 2A, 10A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 7V.Parts of this part have transition frequencies of 2.5MHz.During maximum operation, collector current can be as low as 10A volts.

JANTX2N3716 Features
the DC current gain for this device is 30 @ 3A 2V
the vce saturation(Max) is 2.5V @ 2A, 10A
the emitter base voltage is kept at 7V
a transition frequency of 2.5MHz


JANTX2N3716 Applications
There are a lot of Microsemi Corporation
JANTX2N3716 applications of single BJT transistors.


Inverter
Interface
Driver
Muting
JANTX2N3716 More Descriptions
Trans GP BJT NPN 80V 10A 5000mW 3-Pin(2 Tab) TO-3 Tray
JANTX Series 80 V 10 A NPN High Power Silicon Transistor - TO-3 (TO-204AA)
High Power Silicon Transistor NPN 80VDC 10A 2-Pin TO-3
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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