JANTX2N3700UB

Microsemi Corporation JANTX2N3700UB

Part Number:
JANTX2N3700UB
Manufacturer:
Microsemi Corporation
Ventron No:
2462791-JANTX2N3700UB
Description:
TRANS NPN 80V 1A
ECAD Model:
Datasheet:
JANTX2N3700UB

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Specifications
Microsemi Corporation JANTX2N3700UB technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation JANTX2N3700UB.
  • Factory Lead Time
    8 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    3-SMD, No Lead
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -65°C~200°C TJ
  • Packaging
    Bulk
  • Series
    Military, MIL-PRF-19500/391
  • Published
    2007
  • JESD-609 Code
    e0
  • Pbfree Code
    no
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin/Lead (Sn/Pb)
  • Additional Feature
    HIGH RELIABILITY
  • Max Power Dissipation
    500mW
  • Terminal Position
    DUAL
  • Pin Count
    3
  • Qualification Status
    Qualified
  • Number of Elements
    1
  • Configuration
    SINGLE
  • Power Dissipation
    500mW
  • Transistor Application
    SWITCHING
  • Polarity/Channel Type
    NPN
  • Transistor Type
    NPN
  • Collector Emitter Voltage (VCEO)
    80V
  • Max Collector Current
    1A
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    50 @ 500mA 10V
  • Current - Collector Cutoff (Max)
    10μA ICBO
  • Vce Saturation (Max) @ Ib, Ic
    500mV @ 50mA, 500mA
  • Collector Emitter Breakdown Voltage
    80V
  • Collector Base Voltage (VCBO)
    140V
  • Emitter Base Voltage (VEBO)
    7V
  • Radiation Hardening
    No
  • RoHS Status
    Non-RoHS Compliant
Description
JANTX2N3700UB Overview
This device has a DC current gain of 50 @ 500mA 10V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 500mV @ 50mA, 500mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 7V.A maximum collector current of 1A volts is possible.

JANTX2N3700UB Features
the DC current gain for this device is 50 @ 500mA 10V
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 7V


JANTX2N3700UB Applications
There are a lot of Microsemi Corporation
JANTX2N3700UB applications of single BJT transistors.


Inverter
Interface
Driver
Muting
JANTX2N3700UB More Descriptions
Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon
JANTX Series 80 V 1 A 500 Mw Surface Mount Low Power NPN Silicon Transistor-UB-3
Trans GP BJT NPN 80V 1A 500mW 4-Pin Case UB Waffle
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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