Microsemi Corporation JANTX2N3700UB
- Part Number:
- JANTX2N3700UB
- Manufacturer:
- Microsemi Corporation
- Ventron No:
- 2462791-JANTX2N3700UB
- Description:
- TRANS NPN 80V 1A
- Datasheet:
- JANTX2N3700UB
Microsemi Corporation JANTX2N3700UB technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation JANTX2N3700UB.
- Factory Lead Time8 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case3-SMD, No Lead
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-65°C~200°C TJ
- PackagingBulk
- SeriesMilitary, MIL-PRF-19500/391
- Published2007
- JESD-609 Codee0
- Pbfree Codeno
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin/Lead (Sn/Pb)
- Additional FeatureHIGH RELIABILITY
- Max Power Dissipation500mW
- Terminal PositionDUAL
- Pin Count3
- Qualification StatusQualified
- Number of Elements1
- ConfigurationSINGLE
- Power Dissipation500mW
- Transistor ApplicationSWITCHING
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)80V
- Max Collector Current1A
- DC Current Gain (hFE) (Min) @ Ic, Vce50 @ 500mA 10V
- Current - Collector Cutoff (Max)10μA ICBO
- Vce Saturation (Max) @ Ib, Ic500mV @ 50mA, 500mA
- Collector Emitter Breakdown Voltage80V
- Collector Base Voltage (VCBO)140V
- Emitter Base Voltage (VEBO)7V
- Radiation HardeningNo
- RoHS StatusNon-RoHS Compliant
JANTX2N3700UB Overview
This device has a DC current gain of 50 @ 500mA 10V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 500mV @ 50mA, 500mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 7V.A maximum collector current of 1A volts is possible.
JANTX2N3700UB Features
the DC current gain for this device is 50 @ 500mA 10V
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 7V
JANTX2N3700UB Applications
There are a lot of Microsemi Corporation
JANTX2N3700UB applications of single BJT transistors.
Inverter
Interface
Driver
Muting
This device has a DC current gain of 50 @ 500mA 10V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 500mV @ 50mA, 500mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 7V.A maximum collector current of 1A volts is possible.
JANTX2N3700UB Features
the DC current gain for this device is 50 @ 500mA 10V
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 7V
JANTX2N3700UB Applications
There are a lot of Microsemi Corporation
JANTX2N3700UB applications of single BJT transistors.
Inverter
Interface
Driver
Muting
JANTX2N3700UB More Descriptions
Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon
JANTX Series 80 V 1 A 500 Mw Surface Mount Low Power NPN Silicon Transistor-UB-3
Trans GP BJT NPN 80V 1A 500mW 4-Pin Case UB Waffle
JANTX Series 80 V 1 A 500 Mw Surface Mount Low Power NPN Silicon Transistor-UB-3
Trans GP BJT NPN 80V 1A 500mW 4-Pin Case UB Waffle
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