Microsemi Corporation JANTX2N3637L

Name: JANTX2N3637L
Brand: Microsemi Corporation
SKU: 2466226-JANTX2N3637L
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: JANTX2N3637L

Manufacturer:: Microsemi Corporation

Ventron No:: 2466226-JANTX2N3637L

Description:: TRANS PNP 175V 1A

ECAD Model:

Datasheet:: JANTX2N3637L

Specifications

Microsemi Corporation JANTX2N3637L technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation JANTX2N3637L.

Lifecycle Status
IN PRODUCTION (Last Updated: 1 month ago)
Factory Lead Time
23 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-205AA, TO-5-3 Metal Can
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-65°C~200°C TJ
Packaging
Bulk
Series
Military, MIL-PRF-19500/357
Published
2007
JESD-609 Code
e0
Pbfree Code
no
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin/Lead (Sn/Pb)
HTS Code
8541.29.00.95
Subcategory
Other Transistors
Max Power Dissipation
1W
Terminal Position
BOTTOM
Terminal Form
WIRE
Pin Count
3
Qualification Status
Qualified
Number of Elements
1
Configuration
SINGLE
Power - Max
1W
Transistor Application
SWITCHING
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
175V
Max Collector Current
1A
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 50mA 10V
Current - Collector Cutoff (Max)
10μA
Vce Saturation (Max) @ Ib, Ic
600mV @ 5mA, 50mA
Collector Base Voltage (VCBO)
175V
Turn Off Time-Max (toff)
650ns
Turn On Time-Max (ton)
200ns
Radiation Hardening
No
RoHS Status
Non-RoHS Compliant

Description

JANTX2N3637L Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 50mA 10V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 600mV @ 5mA, 50mA.During maximum operation, collector current can be as low as 1A volts.

JANTX2N3637L Features
the DC current gain for this device is 100 @ 50mA 10V
the vce saturation(Max) is 600mV @ 5mA, 50mA

JANTX2N3637L Applications
There are a lot of Microsemi Corporation
JANTX2N3637L applications of single BJT transistors.

Inverter
Interface
Driver
Muting

JANTX2N3637L More Descriptions

Trans GP BJT PNP 175V 1A 3-Pin TO-5
Small-Signal BJT _ TO-5
Non-Compliant Through Hole Bulk 3 Production (Last Updated: 1 month ago) No 1 A 1 W
JANTX2N3637L --

Certification