Microsemi Corporation JANTX2N3637
- Part Number:
- JANTX2N3637
- Manufacturer:
- Microsemi Corporation
- Ventron No:
- 3553863-JANTX2N3637
- Description:
- TRANS PNP 175V 1A TO-39
- Datasheet:
- JANTX2N3637
Microsemi Corporation JANTX2N3637 technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation JANTX2N3637.
- Lifecycle StatusIN PRODUCTION (Last Updated: 3 weeks ago)
- Factory Lead Time23 Weeks
- Contact PlatingLead, Tin
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-205AA, TO-5-3 Metal Can
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-65°C~200°C TJ
- PackagingBulk
- SeriesMilitary, MIL-PRF-19500/357
- Published2002
- JESD-609 Codee0
- Pbfree Codeno
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin/Lead (Sn/Pb)
- SubcategoryOther Transistors
- Max Power Dissipation1W
- Terminal PositionBOTTOM
- Terminal FormWIRE
- Pin Count2
- Qualification StatusQualified
- Number of Elements1
- ConfigurationSINGLE
- Power Dissipation1W
- Transistor ApplicationSWITCHING
- Polarity/Channel TypePNP
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)175V
- Max Collector Current1A
- DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 50mA 10V
- Current - Collector Cutoff (Max)10μA
- Vce Saturation (Max) @ Ib, Ic600mV @ 5mA, 50mA
- Transition Frequency200MHz
- Collector Base Voltage (VCBO)175V
- Emitter Base Voltage (VEBO)5V
- Turn Off Time-Max (toff)650ns
- Turn On Time-Max (ton)200ns
- Radiation HardeningNo
- RoHS StatusNon-RoHS Compliant
- Lead FreeContains Lead
JANTX2N3637 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 50mA 10V.When VCE saturation is 600mV @ 5mA, 50mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.In the part, the transition frequency is 200MHz.A maximum collector current of 1A volts can be achieved.
JANTX2N3637 Features
the DC current gain for this device is 100 @ 50mA 10V
the vce saturation(Max) is 600mV @ 5mA, 50mA
the emitter base voltage is kept at 5V
a transition frequency of 200MHz
JANTX2N3637 Applications
There are a lot of Microsemi Corporation
JANTX2N3637 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 50mA 10V.When VCE saturation is 600mV @ 5mA, 50mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.In the part, the transition frequency is 200MHz.A maximum collector current of 1A volts can be achieved.
JANTX2N3637 Features
the DC current gain for this device is 100 @ 50mA 10V
the vce saturation(Max) is 600mV @ 5mA, 50mA
the emitter base voltage is kept at 5V
a transition frequency of 200MHz
JANTX2N3637 Applications
There are a lot of Microsemi Corporation
JANTX2N3637 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
JANTX2N3637 More Descriptions
JANTX Series 175 V 1 A PNP Through Hole Silicon Switching Transistor - TO-39
Trans GP BJT PNP 175V 1A 1000mW 3-Pin TO-39 Bag
Small-Signal BJT _ TO-39
OEMs, CMs ONLY (NO BROKERS)
JANTX2N3637 --
Trans GP BJT PNP 175V 1A 1000mW 3-Pin TO-39 Bag
Small-Signal BJT _ TO-39
OEMs, CMs ONLY (NO BROKERS)
JANTX2N3637 --
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