JANTX2N3637

Microsemi Corporation JANTX2N3637

Part Number:
JANTX2N3637
Manufacturer:
Microsemi Corporation
Ventron No:
3553863-JANTX2N3637
Description:
TRANS PNP 175V 1A TO-39
ECAD Model:
Datasheet:
JANTX2N3637

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Specifications
Microsemi Corporation JANTX2N3637 technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation JANTX2N3637.
  • Lifecycle Status
    IN PRODUCTION (Last Updated: 3 weeks ago)
  • Factory Lead Time
    23 Weeks
  • Contact Plating
    Lead, Tin
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-205AA, TO-5-3 Metal Can
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -65°C~200°C TJ
  • Packaging
    Bulk
  • Series
    Military, MIL-PRF-19500/357
  • Published
    2002
  • JESD-609 Code
    e0
  • Pbfree Code
    no
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin/Lead (Sn/Pb)
  • Subcategory
    Other Transistors
  • Max Power Dissipation
    1W
  • Terminal Position
    BOTTOM
  • Terminal Form
    WIRE
  • Pin Count
    2
  • Qualification Status
    Qualified
  • Number of Elements
    1
  • Configuration
    SINGLE
  • Power Dissipation
    1W
  • Transistor Application
    SWITCHING
  • Polarity/Channel Type
    PNP
  • Transistor Type
    PNP
  • Collector Emitter Voltage (VCEO)
    175V
  • Max Collector Current
    1A
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    100 @ 50mA 10V
  • Current - Collector Cutoff (Max)
    10μA
  • Vce Saturation (Max) @ Ib, Ic
    600mV @ 5mA, 50mA
  • Transition Frequency
    200MHz
  • Collector Base Voltage (VCBO)
    175V
  • Emitter Base Voltage (VEBO)
    5V
  • Turn Off Time-Max (toff)
    650ns
  • Turn On Time-Max (ton)
    200ns
  • Radiation Hardening
    No
  • RoHS Status
    Non-RoHS Compliant
  • Lead Free
    Contains Lead
Description
JANTX2N3637 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 50mA 10V.When VCE saturation is 600mV @ 5mA, 50mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.In the part, the transition frequency is 200MHz.A maximum collector current of 1A volts can be achieved.

JANTX2N3637 Features
the DC current gain for this device is 100 @ 50mA 10V
the vce saturation(Max) is 600mV @ 5mA, 50mA
the emitter base voltage is kept at 5V
a transition frequency of 200MHz


JANTX2N3637 Applications
There are a lot of Microsemi Corporation
JANTX2N3637 applications of single BJT transistors.


Inverter
Interface
Driver
Muting
JANTX2N3637 More Descriptions
JANTX Series 175 V 1 A PNP Through Hole Silicon Switching Transistor - TO-39
Trans GP BJT PNP 175V 1A 1000mW 3-Pin TO-39 Bag
Small-Signal BJT _ TO-39
OEMs, CMs ONLY (NO BROKERS)
JANTX2N3637 --
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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