Microsemi Corporation JANTX2N3634
- Part Number:
- JANTX2N3634
- Manufacturer:
- Microsemi Corporation
- Ventron No:
- 2466546-JANTX2N3634
- Description:
- TRANS PNP 140V 1A
- Datasheet:
- JANTX2N3634
Microsemi Corporation JANTX2N3634 technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation JANTX2N3634.
- Lifecycle StatusIN PRODUCTION (Last Updated: 1 month ago)
- Factory Lead Time23 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-205AD, TO-39-3 Metal Can
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-65°C~200°C TJ
- PackagingBulk
- SeriesMilitary, MIL-PRF-19500/357
- Published2002
- JESD-609 Codee0
- Pbfree Codeno
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin/Lead (Sn/Pb)
- SubcategoryOther Transistors
- Max Power Dissipation1W
- Terminal PositionBOTTOM
- Terminal FormWIRE
- Pin Count2
- Qualification StatusQualified
- Number of Elements1
- ConfigurationSINGLE
- Power Dissipation1W
- Transistor ApplicationSWITCHING
- Polarity/Channel TypePNP
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)140V
- Max Collector Current1A
- DC Current Gain (hFE) (Min) @ Ic, Vce50 @ 50mA 10V
- Current - Collector Cutoff (Max)10μA
- Vce Saturation (Max) @ Ib, Ic600mV @ 5mA, 50mA
- Transition Frequency150MHz
- Collector Base Voltage (VCBO)140V
- Emitter Base Voltage (VEBO)5V
- Turn Off Time-Max (toff)650ns
- Turn On Time-Max (ton)200ns
- Radiation HardeningNo
- RoHS StatusNon-RoHS Compliant
JANTX2N3634 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 50 @ 50mA 10V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 600mV @ 5mA, 50mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.A transition frequency of 150MHz is present in the part.Collector current can be as low as 1A volts at its maximum.
JANTX2N3634 Features
the DC current gain for this device is 50 @ 50mA 10V
the vce saturation(Max) is 600mV @ 5mA, 50mA
the emitter base voltage is kept at 5V
a transition frequency of 150MHz
JANTX2N3634 Applications
There are a lot of Microsemi Corporation
JANTX2N3634 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 50 @ 50mA 10V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 600mV @ 5mA, 50mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.A transition frequency of 150MHz is present in the part.Collector current can be as low as 1A volts at its maximum.
JANTX2N3634 Features
the DC current gain for this device is 50 @ 50mA 10V
the vce saturation(Max) is 600mV @ 5mA, 50mA
the emitter base voltage is kept at 5V
a transition frequency of 150MHz
JANTX2N3634 Applications
There are a lot of Microsemi Corporation
JANTX2N3634 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
JANTX2N3634 More Descriptions
Compliant Through Hole PNP Bulk TO-39 3 Production (Last Updated: 1 month ago)
Trans GP BJT PNP 140V 1A 1000mW 3-Pin TO-39 Bag
Small-Signal BJT _ TO-39
JANTX2N3634 --
Trans GP BJT PNP 140V 1A 1000mW 3-Pin TO-39 Bag
Small-Signal BJT _ TO-39
JANTX2N3634 --
Popular Search Part Number
Related Keywords
Search Tags
Latest News
-
18 January 2024
TPS51200DRCR: Advanced Regulator Solution for DDR Termination
Ⅰ. Overview of TPS51200DRCRⅡ. Technical parameters of TPS51200DRCRⅢ. What are the advantages of TPS51200DRCR?Ⅳ. Absolute maximum ratings of TPS51200DRCRⅤ. How to use TPS51200DRCR?Ⅵ. Where is TPS51200DRCR used?Ⅶ. TPS51200DRCR... -
19 January 2024
TXB0104PWR Alternatives, Package, Specifications and Applications
Ⅰ. TXB0104PWR overviewⅡ. Operating principle of TXB0104PWRⅢ. Package of TXB0104PWRⅣ. Specifications of TXB0104PWRⅤ. How to use TXB0104PWR?Ⅵ. What are the applications of TXB0104PWR?Ⅶ. How does TXB0104PWR realize automatic... -
19 January 2024
The Best Tutorial for ISO3082DWR
Ⅰ. Overview of ISO3082DWRⅡ. Technical parameters of ISO3082DWRⅢ. What are the characteristics of ISO3082DWR?Ⅳ. How does ISO3082DWR work?Ⅴ. ISO3082DWR symbol, footprint and pin configurationⅥ. Layout principles of ISO3082DWRⅦ.... -
22 January 2024
What You Need to Know About the MMBT3904 Transistor
Ⅰ. MMBT3904 descriptionⅡ. What is the pin configuration of MMBT3904?Ⅲ. Specifications of MMBT3904Ⅳ. Typical circuit schematic of MMBT3904Ⅴ. Where is MMBT3904 used?Ⅵ. Absolute maximum ratings of MMBT3904Ⅶ. What...
Help you to save your cost and time.
Reliable package for your goods.
Fast Reliable Delivery to save time.
Quality premium after-sale service.