JANTX2N3634

Microsemi Corporation JANTX2N3634

Part Number:
JANTX2N3634
Manufacturer:
Microsemi Corporation
Ventron No:
2466546-JANTX2N3634
Description:
TRANS PNP 140V 1A
ECAD Model:
Datasheet:
JANTX2N3634

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Specifications
Microsemi Corporation JANTX2N3634 technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation JANTX2N3634.
  • Lifecycle Status
    IN PRODUCTION (Last Updated: 1 month ago)
  • Factory Lead Time
    23 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-205AD, TO-39-3 Metal Can
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -65°C~200°C TJ
  • Packaging
    Bulk
  • Series
    Military, MIL-PRF-19500/357
  • Published
    2002
  • JESD-609 Code
    e0
  • Pbfree Code
    no
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin/Lead (Sn/Pb)
  • Subcategory
    Other Transistors
  • Max Power Dissipation
    1W
  • Terminal Position
    BOTTOM
  • Terminal Form
    WIRE
  • Pin Count
    2
  • Qualification Status
    Qualified
  • Number of Elements
    1
  • Configuration
    SINGLE
  • Power Dissipation
    1W
  • Transistor Application
    SWITCHING
  • Polarity/Channel Type
    PNP
  • Transistor Type
    PNP
  • Collector Emitter Voltage (VCEO)
    140V
  • Max Collector Current
    1A
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    50 @ 50mA 10V
  • Current - Collector Cutoff (Max)
    10μA
  • Vce Saturation (Max) @ Ib, Ic
    600mV @ 5mA, 50mA
  • Transition Frequency
    150MHz
  • Collector Base Voltage (VCBO)
    140V
  • Emitter Base Voltage (VEBO)
    5V
  • Turn Off Time-Max (toff)
    650ns
  • Turn On Time-Max (ton)
    200ns
  • Radiation Hardening
    No
  • RoHS Status
    Non-RoHS Compliant
Description
JANTX2N3634 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 50 @ 50mA 10V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 600mV @ 5mA, 50mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.A transition frequency of 150MHz is present in the part.Collector current can be as low as 1A volts at its maximum.

JANTX2N3634 Features
the DC current gain for this device is 50 @ 50mA 10V
the vce saturation(Max) is 600mV @ 5mA, 50mA
the emitter base voltage is kept at 5V
a transition frequency of 150MHz


JANTX2N3634 Applications
There are a lot of Microsemi Corporation
JANTX2N3634 applications of single BJT transistors.


Inverter
Interface
Driver
Muting
JANTX2N3634 More Descriptions
Compliant Through Hole PNP Bulk TO-39 3 Production (Last Updated: 1 month ago)
Trans GP BJT PNP 140V 1A 1000mW 3-Pin TO-39 Bag
Small-Signal BJT _ TO-39
JANTX2N3634 --
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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