Microsemi Corporation JANTX2N3506
- Part Number:
- JANTX2N3506
- Manufacturer:
- Microsemi Corporation
- Ventron No:
- 2845330-JANTX2N3506
- Description:
- TRANS NPN 40V 3A TO-39
- Datasheet:
- JANTX2N3506
Microsemi Corporation JANTX2N3506 technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation JANTX2N3506.
- Lifecycle StatusIN PRODUCTION (Last Updated: 2 days ago)
- Factory Lead Time20 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-205AD, TO-39-3 Metal Can
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-65°C~200°C TJ
- PackagingBulk
- SeriesMilitary, MIL-PRF-19500/349
- Published2007
- JESD-609 Codee0
- Pbfree Codeno
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin/Lead (Sn/Pb)
- SubcategoryOther Transistors
- Max Power Dissipation1W
- Terminal PositionBOTTOM
- Terminal FormWIRE
- Pin Count3
- Qualification StatusQualified
- Number of Elements1
- ConfigurationSINGLE
- Power Dissipation1W
- Case ConnectionCOLLECTOR
- Transistor ApplicationSWITCHING
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)40V
- Max Collector Current3A
- DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 1.5A 2V
- Vce Saturation (Max) @ Ib, Ic1.5V @ 250mA, 2.5A
- Transition Frequency60MHz
- Collector Base Voltage (VCBO)60V
- Emitter Base Voltage (VEBO)5V
- Turn Off Time-Max (toff)90ns
- Turn On Time-Max (ton)45ns
- Radiation HardeningNo
- RoHS StatusNon-RoHS Compliant
JANTX2N3506 Overview
In this device, the DC current gain is 40 @ 1.5A 2V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.5V @ 250mA, 2.5A.With the emitter base voltage set at 5V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 60MHz.Single BJT transistor is possible for the collector current to fall as low as 3A volts at Single BJT transistors maximum.
JANTX2N3506 Features
the DC current gain for this device is 40 @ 1.5A 2V
the vce saturation(Max) is 1.5V @ 250mA, 2.5A
the emitter base voltage is kept at 5V
a transition frequency of 60MHz
JANTX2N3506 Applications
There are a lot of Microsemi Corporation
JANTX2N3506 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
In this device, the DC current gain is 40 @ 1.5A 2V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.5V @ 250mA, 2.5A.With the emitter base voltage set at 5V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 60MHz.Single BJT transistor is possible for the collector current to fall as low as 3A volts at Single BJT transistors maximum.
JANTX2N3506 Features
the DC current gain for this device is 40 @ 1.5A 2V
the vce saturation(Max) is 1.5V @ 250mA, 2.5A
the emitter base voltage is kept at 5V
a transition frequency of 60MHz
JANTX2N3506 Applications
There are a lot of Microsemi Corporation
JANTX2N3506 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
JANTX2N3506 More Descriptions
Compliant Through Hole NPN TO-39 3 Production (Last Updated: 1 month ago) 1 W
Trans GP BJT NPN 40V 3A 1000mW 3-Pin TO-39 Bag
Power Bjt To-39 Rohs Compliant: Yes |Microchip JANTX2N3506
Trans GP BJT NPN 40V 3A 1000mW 3-Pin TO-39 Bag
Power Bjt To-39 Rohs Compliant: Yes |Microchip JANTX2N3506
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