JANTX2N3506

Microsemi Corporation JANTX2N3506

Part Number:
JANTX2N3506
Manufacturer:
Microsemi Corporation
Ventron No:
2845330-JANTX2N3506
Description:
TRANS NPN 40V 3A TO-39
ECAD Model:
Datasheet:
JANTX2N3506

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Specifications
Microsemi Corporation JANTX2N3506 technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation JANTX2N3506.
  • Lifecycle Status
    IN PRODUCTION (Last Updated: 2 days ago)
  • Factory Lead Time
    20 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-205AD, TO-39-3 Metal Can
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -65°C~200°C TJ
  • Packaging
    Bulk
  • Series
    Military, MIL-PRF-19500/349
  • Published
    2007
  • JESD-609 Code
    e0
  • Pbfree Code
    no
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin/Lead (Sn/Pb)
  • Subcategory
    Other Transistors
  • Max Power Dissipation
    1W
  • Terminal Position
    BOTTOM
  • Terminal Form
    WIRE
  • Pin Count
    3
  • Qualification Status
    Qualified
  • Number of Elements
    1
  • Configuration
    SINGLE
  • Power Dissipation
    1W
  • Case Connection
    COLLECTOR
  • Transistor Application
    SWITCHING
  • Polarity/Channel Type
    NPN
  • Transistor Type
    NPN
  • Collector Emitter Voltage (VCEO)
    40V
  • Max Collector Current
    3A
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    40 @ 1.5A 2V
  • Vce Saturation (Max) @ Ib, Ic
    1.5V @ 250mA, 2.5A
  • Transition Frequency
    60MHz
  • Collector Base Voltage (VCBO)
    60V
  • Emitter Base Voltage (VEBO)
    5V
  • Turn Off Time-Max (toff)
    90ns
  • Turn On Time-Max (ton)
    45ns
  • Radiation Hardening
    No
  • RoHS Status
    Non-RoHS Compliant
Description
JANTX2N3506 Overview
In this device, the DC current gain is 40 @ 1.5A 2V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.5V @ 250mA, 2.5A.With the emitter base voltage set at 5V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 60MHz.Single BJT transistor is possible for the collector current to fall as low as 3A volts at Single BJT transistors maximum.

JANTX2N3506 Features
the DC current gain for this device is 40 @ 1.5A 2V
the vce saturation(Max) is 1.5V @ 250mA, 2.5A
the emitter base voltage is kept at 5V
a transition frequency of 60MHz


JANTX2N3506 Applications
There are a lot of Microsemi Corporation
JANTX2N3506 applications of single BJT transistors.


Inverter
Interface
Driver
Muting
JANTX2N3506 More Descriptions
Compliant Through Hole NPN TO-39 3 Production (Last Updated: 1 month ago) 1 W
Trans GP BJT NPN 40V 3A 1000mW 3-Pin TO-39 Bag
Power Bjt To-39 Rohs Compliant: Yes |Microchip JANTX2N3506
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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