Microsemi Corporation JANTX2N3501
- Part Number:
- JANTX2N3501
- Manufacturer:
- Microsemi Corporation
- Ventron No:
- 2464076-JANTX2N3501
- Description:
- TRANS NPN 150V 0.3A
- ECAD Model:
-
- Datasheet:
- JANTX2N3501
Microsemi Corporation JANTX2N3501 technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation JANTX2N3501.
- Lifecycle StatusIN PRODUCTION (Last Updated: 3 weeks ago)
- Factory Lead Time23 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-205AD, TO-39-3 Metal Can
- Number of Pins3
- Supplier Device PackageTO-39 (TO-205AD)
- Operating Temperature-65°C~200°C TA
- PackagingBulk
- SeriesMilitary, MIL-PRF-19500/366
- Published2002
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Max Operating Temperature200°C
- Min Operating Temperature-55°C
- Max Power Dissipation1W
- Number of Elements1
- PolarityNPN
- Power Dissipation1W
- Power - Max1W
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)150V
- Max Collector Current300mA
- DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 150mA 10V
- Current - Collector Cutoff (Max)10μA ICBO
- Vce Saturation (Max) @ Ib, Ic400mV @ 15mA, 150mA
- Collector Emitter Breakdown Voltage150V
- Voltage - Collector Emitter Breakdown (Max)150V
- Current - Collector (Ic) (Max)300mA
- Collector Base Voltage (VCBO)150V
- Emitter Base Voltage (VEBO)6V
- Radiation HardeningNo
- RoHS StatusNon-RoHS Compliant
- Lead FreeContains Lead
JANTX2N3501 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 150mA 10V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 400mV @ 15mA, 150mA.If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.The product comes in the supplier device package of TO-39 (TO-205AD).A 150V maximal voltage - Collector Emitter Breakdown is present in the device.Collector current can be as low as 300mA volts at its maximum.
JANTX2N3501 Features
the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 400mV @ 15mA, 150mA
the emitter base voltage is kept at 6V
the supplier device package of TO-39 (TO-205AD)
JANTX2N3501 Applications
There are a lot of American Microsemiconductor, Inc.
JANTX2N3501 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 150mA 10V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 400mV @ 15mA, 150mA.If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.The product comes in the supplier device package of TO-39 (TO-205AD).A 150V maximal voltage - Collector Emitter Breakdown is present in the device.Collector current can be as low as 300mA volts at its maximum.
JANTX2N3501 Features
the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 400mV @ 15mA, 150mA
the emitter base voltage is kept at 6V
the supplier device package of TO-39 (TO-205AD)
JANTX2N3501 Applications
There are a lot of American Microsemiconductor, Inc.
JANTX2N3501 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
JANTX2N3501 More Descriptions
Trans GP BJT NPN 150V 0.3A 3-Pin TO-39
JANTX Series 150 V 300 mA Through Hole NPN Silicon Transistor - TO-39
Small-Signal BJT _ TO-39
JANTX2N3501 --
JANTX Series 150 V 300 mA Through Hole NPN Silicon Transistor - TO-39
Small-Signal BJT _ TO-39
JANTX2N3501 --
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