Microsemi Corporation JANTX2N3500
- Part Number:
- JANTX2N3500
- Manufacturer:
- Microsemi Corporation
- Ventron No:
- 2465069-JANTX2N3500
- Description:
- TRANS NPN 150V 0.3A TO-39
- Datasheet:
- JANTX2N3500
Microsemi Corporation JANTX2N3500 technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation JANTX2N3500.
- Lifecycle StatusIN PRODUCTION (Last Updated: 1 month ago)
- Factory Lead Time23 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-205AD, TO-39-3 Metal Can
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-65°C~200°C TJ
- PackagingBulk
- SeriesMilitary, MIL-PRF-19500/366
- Published2007
- JESD-609 Codee0
- Pbfree Codeno
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin/Lead (Sn/Pb)
- HTS Code8541.29.00.95
- SubcategoryOther Transistors
- Max Power Dissipation1W
- Terminal PositionBOTTOM
- Terminal FormWIRE
- Pin Count2
- Qualification StatusQualified
- Number of Elements1
- ConfigurationSINGLE
- Case ConnectionCOLLECTOR
- Power - Max1W
- Transistor ApplicationSWITCHING
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)150V
- Max Collector Current300mA
- DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 150mA 10V
- Current - Collector Cutoff (Max)10μA ICBO
- Vce Saturation (Max) @ Ib, Ic400mV @ 15mA, 150mA
- Transition Frequency150MHz
- Collector Base Voltage (VCBO)150V
- Turn Off Time-Max (toff)1150ns
- Turn On Time-Max (ton)115ns
- Radiation HardeningNo
- RoHS StatusNon-RoHS Compliant
JANTX2N3500 Overview
This device has a DC current gain of 40 @ 150mA 10V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 400mV @ 15mA, 150mA means Ic has reached its maximum value(saturated).As you can see, the part has a transition frequency of 150MHz.A maximum collector current of 300mA volts is possible.
JANTX2N3500 Features
the DC current gain for this device is 40 @ 150mA 10V
the vce saturation(Max) is 400mV @ 15mA, 150mA
a transition frequency of 150MHz
JANTX2N3500 Applications
There are a lot of Microsemi Corporation
JANTX2N3500 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
This device has a DC current gain of 40 @ 150mA 10V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 400mV @ 15mA, 150mA means Ic has reached its maximum value(saturated).As you can see, the part has a transition frequency of 150MHz.A maximum collector current of 300mA volts is possible.
JANTX2N3500 Features
the DC current gain for this device is 40 @ 150mA 10V
the vce saturation(Max) is 400mV @ 15mA, 150mA
a transition frequency of 150MHz
JANTX2N3500 Applications
There are a lot of Microsemi Corporation
JANTX2N3500 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
JANTX2N3500 More Descriptions
Trans GP BJT NPN 150V 0.3A 1000mW 3-Pin TO-39 Bag
Non-Compliant Through Hole Bulk 3 Production (Last Updated: 1 month ago) No 300 mA 1 W
Small-Signal BJT _ TO-39
JANTX2N3500 --
Non-Compliant Through Hole Bulk 3 Production (Last Updated: 1 month ago) No 300 mA 1 W
Small-Signal BJT _ TO-39
JANTX2N3500 --
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