Microsemi Corporation JANTX2N3440
- Part Number:
- JANTX2N3440
- Manufacturer:
- Microsemi Corporation
- Ventron No:
- 2466348-JANTX2N3440
- Description:
- TRANS NPN 250V 1A
- ECAD Model:
-
- Datasheet:
- JANTX2N3440
Microsemi Corporation JANTX2N3440 technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation JANTX2N3440.
- Factory Lead Time20 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-205AD, TO-39-3 Metal Can
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-65°C~200°C TJ
- PackagingBulk
- SeriesMilitary, MIL-PRF-19500/368
- Published2007
- JESD-609 Codee0
- Pbfree Codeno
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin/Lead (Sn/Pb)
- SubcategoryOther Transistors
- Max Power Dissipation800mW
- Terminal PositionBOTTOM
- Terminal FormWIRE
- Pin Count2
- Qualification StatusQualified
- Number of Elements1
- ConfigurationSINGLE
- Power Dissipation800mW
- Case ConnectionCOLLECTOR
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)250V
- Max Collector Current1A
- DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 20mA 10V
- Current - Collector Cutoff (Max)2μA
- Vce Saturation (Max) @ Ib, Ic500mV @ 4mA, 50mA
- Collector Emitter Breakdown Voltage250V
- Transition Frequency15MHz
- Collector Base Voltage (VCBO)300V
- Emitter Base Voltage (VEBO)7V
- Radiation HardeningNo
- RoHS StatusNon-RoHS Compliant
JANTX2N3440 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 40 @ 20mA 10V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 7V can result in a high level of efficiency.There is a transition frequency of 15MHz in the part.When collector current reaches its maximum, it can reach 1A volts.
JANTX2N3440 Features
the DC current gain for this device is 40 @ 20mA 10V
the vce saturation(Max) is 500mV @ 4mA, 50mA
the emitter base voltage is kept at 7V
a transition frequency of 15MHz
JANTX2N3440 Applications
There are a lot of Microsemi Corporation
JANTX2N3440 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 40 @ 20mA 10V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 7V can result in a high level of efficiency.There is a transition frequency of 15MHz in the part.When collector current reaches its maximum, it can reach 1A volts.
JANTX2N3440 Features
the DC current gain for this device is 40 @ 20mA 10V
the vce saturation(Max) is 500mV @ 4mA, 50mA
the emitter base voltage is kept at 7V
a transition frequency of 15MHz
JANTX2N3440 Applications
There are a lot of Microsemi Corporation
JANTX2N3440 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
JANTX2N3440 More Descriptions
Small Signal Bipolar Transistor, 1A I(C), 250V V(BR)CEO, 1-Element, NPN, Silicon
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Power Bjt To-39 Rohs Compliant: Yes |Microchip JANTX2N3440
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2N32XX Series NPN 350 V 1 A Through Hole Low Power Silicon Transistor - TO-39
Trans GP BJT NPN 250V 1A 800mW 3-Pin TO-39 Bag
Power Bjt To-39 Rohs Compliant: Yes |Microchip JANTX2N3440
RF SMALL SIGNAL TRANSISTOR BIPOLAR/HBT
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