Microsemi Corporation JANTX2N3421
- Part Number:
- JANTX2N3421
- Manufacturer:
- Microsemi Corporation
- Ventron No:
- 2463754-JANTX2N3421
- Description:
- TRANS NPN 80V 3A TO-5
- Datasheet:
- JANTX2N3421
Microsemi Corporation JANTX2N3421 technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation JANTX2N3421.
- Lifecycle StatusIN PRODUCTION (Last Updated: 1 month ago)
- Factory Lead Time20 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-205AA, TO-5-3 Metal Can
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-65°C~200°C TJ
- PackagingBulk
- SeriesMilitary, MIL-PRF-19500/393
- Published2002
- JESD-609 Codee0
- Pbfree Codeno
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin/Lead (Sn/Pb)
- SubcategoryOther Transistors
- Max Power Dissipation1W
- Terminal PositionBOTTOM
- Terminal FormWIRE
- Pin Count2
- Qualification StatusQualified
- Number of Elements1
- ConfigurationSINGLE
- Power Dissipation1W
- Case ConnectionCOLLECTOR
- Transistor ApplicationSWITCHING
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)80V
- Max Collector Current3A
- DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 1A 2V
- Current - Collector Cutoff (Max)5μA
- Vce Saturation (Max) @ Ib, Ic500mV @ 200mA, 2A
- Collector Emitter Breakdown Voltage80V
- Collector Base Voltage (VCBO)125V
- Emitter Base Voltage (VEBO)8V
- Radiation HardeningNo
- RoHS StatusNon-RoHS Compliant
- Lead FreeContains Lead
JANTX2N3421 Overview
DC current gain in this device equals 40 @ 1A 2V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 200mA, 2A.An emitter's base voltage can be kept at 8V to gain high efficiency.In extreme cases, the collector current can be as low as 3A volts.
JANTX2N3421 Features
the DC current gain for this device is 40 @ 1A 2V
the vce saturation(Max) is 500mV @ 200mA, 2A
the emitter base voltage is kept at 8V
JANTX2N3421 Applications
There are a lot of Microsemi Corporation
JANTX2N3421 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
DC current gain in this device equals 40 @ 1A 2V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 200mA, 2A.An emitter's base voltage can be kept at 8V to gain high efficiency.In extreme cases, the collector current can be as low as 3A volts.
JANTX2N3421 Features
the DC current gain for this device is 40 @ 1A 2V
the vce saturation(Max) is 500mV @ 200mA, 2A
the emitter base voltage is kept at 8V
JANTX2N3421 Applications
There are a lot of Microsemi Corporation
JANTX2N3421 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
JANTX2N3421 More Descriptions
Bipolar (BJT) Transistor NPN 80V 3A 1W Through Hole TO-5
2N3421 Series NPN 80 V 3 A Silicon Medium Power Transistor - TO-5
Trans GP BJT NPN 80V 3A 1000mW 3-Pin TO-5 Bag
Power Bjt To-5 Rohs Compliant: Yes |Microchip JANTX2N3421
2N3421 Series NPN 80 V 3 A Silicon Medium Power Transistor - TO-5
Trans GP BJT NPN 80V 3A 1000mW 3-Pin TO-5 Bag
Power Bjt To-5 Rohs Compliant: Yes |Microchip JANTX2N3421
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