JANTX2N3421

Microsemi Corporation JANTX2N3421

Part Number:
JANTX2N3421
Manufacturer:
Microsemi Corporation
Ventron No:
2463754-JANTX2N3421
Description:
TRANS NPN 80V 3A TO-5
ECAD Model:
Datasheet:
JANTX2N3421

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Specifications
Microsemi Corporation JANTX2N3421 technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation JANTX2N3421.
  • Lifecycle Status
    IN PRODUCTION (Last Updated: 1 month ago)
  • Factory Lead Time
    20 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-205AA, TO-5-3 Metal Can
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -65°C~200°C TJ
  • Packaging
    Bulk
  • Series
    Military, MIL-PRF-19500/393
  • Published
    2002
  • JESD-609 Code
    e0
  • Pbfree Code
    no
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin/Lead (Sn/Pb)
  • Subcategory
    Other Transistors
  • Max Power Dissipation
    1W
  • Terminal Position
    BOTTOM
  • Terminal Form
    WIRE
  • Pin Count
    2
  • Qualification Status
    Qualified
  • Number of Elements
    1
  • Configuration
    SINGLE
  • Power Dissipation
    1W
  • Case Connection
    COLLECTOR
  • Transistor Application
    SWITCHING
  • Polarity/Channel Type
    NPN
  • Transistor Type
    NPN
  • Collector Emitter Voltage (VCEO)
    80V
  • Max Collector Current
    3A
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    40 @ 1A 2V
  • Current - Collector Cutoff (Max)
    5μA
  • Vce Saturation (Max) @ Ib, Ic
    500mV @ 200mA, 2A
  • Collector Emitter Breakdown Voltage
    80V
  • Collector Base Voltage (VCBO)
    125V
  • Emitter Base Voltage (VEBO)
    8V
  • Radiation Hardening
    No
  • RoHS Status
    Non-RoHS Compliant
  • Lead Free
    Contains Lead
Description
JANTX2N3421 Overview
DC current gain in this device equals 40 @ 1A 2V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 200mA, 2A.An emitter's base voltage can be kept at 8V to gain high efficiency.In extreme cases, the collector current can be as low as 3A volts.

JANTX2N3421 Features
the DC current gain for this device is 40 @ 1A 2V
the vce saturation(Max) is 500mV @ 200mA, 2A
the emitter base voltage is kept at 8V


JANTX2N3421 Applications
There are a lot of Microsemi Corporation
JANTX2N3421 applications of single BJT transistors.


Inverter
Interface
Driver
Muting
JANTX2N3421 More Descriptions
Bipolar (BJT) Transistor NPN 80V 3A 1W Through Hole TO-5
2N3421 Series NPN 80 V 3 A Silicon Medium Power Transistor - TO-5
Trans GP BJT NPN 80V 3A 1000mW 3-Pin TO-5 Bag
Power Bjt To-5 Rohs Compliant: Yes |Microchip JANTX2N3421
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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