JANTX2N3419

Microsemi Corporation JANTX2N3419

Part Number:
JANTX2N3419
Manufacturer:
Microsemi Corporation
Ventron No:
2466329-JANTX2N3419
Description:
TRANS NPN 80V 3A
ECAD Model:
Datasheet:
JANTX2N3419

Quick Request Quote

Please send RFQ , We will respond immediately.

Part Number
Quantity
Company
E-mail
Phone
Comments
Specifications
Microsemi Corporation JANTX2N3419 technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation JANTX2N3419.
  • Lifecycle Status
    IN PRODUCTION (Last Updated: 1 month ago)
  • Factory Lead Time
    20 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-205AA, TO-5-3 Metal Can
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -65°C~200°C TJ
  • Packaging
    Bulk
  • Series
    Military, MIL-PRF-19500/393
  • Published
    2007
  • JESD-609 Code
    e0
  • Pbfree Code
    no
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin/Lead (Sn/Pb)
  • HTS Code
    8541.29.00.95
  • Subcategory
    Other Transistors
  • Max Power Dissipation
    1W
  • Terminal Position
    BOTTOM
  • Terminal Form
    WIRE
  • Pin Count
    3
  • Qualification Status
    Qualified
  • Number of Elements
    1
  • Configuration
    SINGLE
  • Case Connection
    COLLECTOR
  • Transistor Application
    SWITCHING
  • Polarity/Channel Type
    NPN
  • Transistor Type
    NPN
  • Collector Emitter Voltage (VCEO)
    80V
  • Max Collector Current
    3A
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    20 @ 1A 2V
  • Current - Collector Cutoff (Max)
    5μA
  • Vce Saturation (Max) @ Ib, Ic
    500mV @ 200mA, 2A
  • Current - Collector (Ic) (Max)
    3A
  • Transition Frequency
    40MHz
  • Collector Base Voltage (VCBO)
    125V
  • Radiation Hardening
    No
  • RoHS Status
    Non-RoHS Compliant
Description
JANTX2N3419 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 20 @ 1A 2V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.There is a transition frequency of 40MHz in the part.When collector current reaches its maximum, it can reach 3A volts.

JANTX2N3419 Features
the DC current gain for this device is 20 @ 1A 2V
the vce saturation(Max) is 500mV @ 200mA, 2A
a transition frequency of 40MHz


JANTX2N3419 Applications
There are a lot of Microsemi Corporation
JANTX2N3419 applications of single BJT transistors.


Inverter
Interface
Driver
Muting
JANTX2N3419 More Descriptions
NPN Silicon Medium Power Transistor 80VDC 3-Pin TO-5 Bag
Non-Compliant Through Hole Bulk 3 Production (Last Updated: 1 month ago) No 3 A 1 W
Power Bjt To-5 Rohs Compliant: Yes |Microchip JANTX2N3419
Trans GP BJT NPN 80V 3A 3-Pin TO-5
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

Latest News

  • cost

    Help you to save your cost and time.

  • package

    Reliable package for your goods.

  • fast

    Fast Reliable Delivery to save time.

  • service

    Quality premium after-sale service.