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JANTX2N3250A

Microsemi Corporation JANTX2N3250A

Part Number:
JANTX2N3250A
Manufacturer:
Microsemi Corporation
Ventron No:
2470513-JANTX2N3250A
Description:
TRANS PNP 60V 0.2A TO-39
ECAD Model:
Datasheet:
JANTX2N3250A

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Specifications
Microsemi Corporation JANTX2N3250A technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation JANTX2N3250A.
  • Lifecycle Status
    IN PRODUCTION (Last Updated: 1 month ago)
  • Factory Lead Time
    20 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-205AD, TO-39-3 Metal Can
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -65°C~200°C TJ
  • Packaging
    Bulk
  • Series
    Military, MIL-PRF-19500/323
  • Published
    2007
  • JESD-609 Code
    e0
  • Pbfree Code
    no
  • Part Status
    Discontinued
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin/Lead (Sn/Pb)
  • Subcategory
    Other Transistors
  • Max Power Dissipation
    360mW
  • Terminal Position
    BOTTOM
  • Terminal Form
    WIRE
  • Pin Count
    3
  • Qualification Status
    Qualified
  • Number of Elements
    1
  • Configuration
    SINGLE
  • Power Dissipation
    360mW
  • Case Connection
    COLLECTOR
  • Transistor Application
    SWITCHING
  • Polarity/Channel Type
    PNP
  • Transistor Type
    PNP
  • Collector Emitter Voltage (VCEO)
    60V
  • Max Collector Current
    200mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    50 @ 10mA 1V
  • Current - Collector Cutoff (Max)
    10μA ICBO
  • Vce Saturation (Max) @ Ib, Ic
    500mV @ 5mA, 50mA
  • Transition Frequency
    250MHz
  • Collector Base Voltage (VCBO)
    60V
  • Emitter Base Voltage (VEBO)
    5V
  • Turn Off Time-Max (toff)
    250ns
  • Turn On Time-Max (ton)
    70ns
  • Radiation Hardening
    No
  • RoHS Status
    Non-RoHS Compliant
Description
JANTX2N3250A Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 50 @ 10mA 1V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 5mA, 50mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Parts of this part have transition frequencies of 250MHz.During maximum operation, collector current can be as low as 200mA volts.

JANTX2N3250A Features
the DC current gain for this device is 50 @ 10mA 1V
the vce saturation(Max) is 500mV @ 5mA, 50mA
the emitter base voltage is kept at 5V
a transition frequency of 250MHz


JANTX2N3250A Applications
There are a lot of Microsemi Corporation
JANTX2N3250A applications of single BJT transistors.


Inverter
Interface
Driver
Muting
JANTX2N3250A More Descriptions
Trans GP BJT PNP 60V 0.2A 360mW 3-Pin TO-39 Bag
Non-Compliant Through Hole PNP Bulk TO-39 3 Production (Last Updated: 1 month ago)
Small-Signal BJT _ TO-18
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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