JANTX2N2907AUA

Microsemi Corporation JANTX2N2907AUA

Part Number:
JANTX2N2907AUA
Manufacturer:
Microsemi Corporation
Ventron No:
2466365-JANTX2N2907AUA
Description:
TRANS PNP 60V 0.6A
ECAD Model:
Datasheet:
MIL-PRF-19500/291Y w/Amendment 1 Specification

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Specifications
Microsemi Corporation JANTX2N2907AUA technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation JANTX2N2907AUA.
  • Lifecycle Status
    IN PRODUCTION (Last Updated: 1 month ago)
  • Factory Lead Time
    23 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    4-SMD, No Lead
  • Number of Pins
    4
  • Supplier Device Package
    UA
  • Operating Temperature
    -65°C~200°C TJ
  • Packaging
    Bulk
  • Series
    Military, MIL-PRF-19500/291
  • Published
    2007
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Max Operating Temperature
    200°C
  • Min Operating Temperature
    -65°C
  • Max Power Dissipation
    500mW
  • Number of Elements
    1
  • Polarity
    PNP
  • Power Dissipation
    500mW
  • Power - Max
    500mW
  • Transistor Type
    PNP
  • Collector Emitter Voltage (VCEO)
    60V
  • Max Collector Current
    600mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    100 @ 150mA 10V
  • Current - Collector Cutoff (Max)
    50nA
  • Vce Saturation (Max) @ Ib, Ic
    1.6V @ 50mA, 500mA
  • Collector Emitter Breakdown Voltage
    60V
  • Voltage - Collector Emitter Breakdown (Max)
    60V
  • Current - Collector (Ic) (Max)
    600mA
  • Collector Base Voltage (VCBO)
    60V
  • Emitter Base Voltage (VEBO)
    5V
  • Radiation Hardening
    No
  • RoHS Status
    Non-RoHS Compliant
  • Lead Free
    Contains Lead
Description
JANTX2N2907AUA Overview
This device has a DC current gain of 100 @ 150mA 10V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 1.6V @ 50mA, 500mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.Product package UA comes from the supplier.Collector Emitter Breakdown occurs at 60VV - Maximum voltage.A maximum collector current of 600mA volts is possible.

JANTX2N2907AUA Features
the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 1.6V @ 50mA, 500mA
the emitter base voltage is kept at 5V
the supplier device package of UA


JANTX2N2907AUA Applications
There are a lot of Microsemi Corporation
JANTX2N2907AUA applications of single BJT transistors.


Inverter
Interface
Driver
Muting
JANTX2N2907AUA More Descriptions
Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon
JANTX Series 500 mW 60 V 600mA Surface Mount PNP Small Signal Silicon Transistor
Trans GP BJT PNP 60V 0.6A 500mW 4-Pin UA Waffle
Small-Signal Bjt Ua Rohs Compliant: Yes |Microchip JANTX2N2907AUA
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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