Microsemi Corporation JANTX2N2907AUA
- Part Number:
- JANTX2N2907AUA
- Manufacturer:
- Microsemi Corporation
- Ventron No:
- 2466365-JANTX2N2907AUA
- Description:
- TRANS PNP 60V 0.6A
Microsemi Corporation JANTX2N2907AUA technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation JANTX2N2907AUA.
- Lifecycle StatusIN PRODUCTION (Last Updated: 1 month ago)
- Factory Lead Time23 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case4-SMD, No Lead
- Number of Pins4
- Supplier Device PackageUA
- Operating Temperature-65°C~200°C TJ
- PackagingBulk
- SeriesMilitary, MIL-PRF-19500/291
- Published2007
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Max Operating Temperature200°C
- Min Operating Temperature-65°C
- Max Power Dissipation500mW
- Number of Elements1
- PolarityPNP
- Power Dissipation500mW
- Power - Max500mW
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)60V
- Max Collector Current600mA
- DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 150mA 10V
- Current - Collector Cutoff (Max)50nA
- Vce Saturation (Max) @ Ib, Ic1.6V @ 50mA, 500mA
- Collector Emitter Breakdown Voltage60V
- Voltage - Collector Emitter Breakdown (Max)60V
- Current - Collector (Ic) (Max)600mA
- Collector Base Voltage (VCBO)60V
- Emitter Base Voltage (VEBO)5V
- Radiation HardeningNo
- RoHS StatusNon-RoHS Compliant
- Lead FreeContains Lead
JANTX2N2907AUA Overview
This device has a DC current gain of 100 @ 150mA 10V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 1.6V @ 50mA, 500mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.Product package UA comes from the supplier.Collector Emitter Breakdown occurs at 60VV - Maximum voltage.A maximum collector current of 600mA volts is possible.
JANTX2N2907AUA Features
the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 1.6V @ 50mA, 500mA
the emitter base voltage is kept at 5V
the supplier device package of UA
JANTX2N2907AUA Applications
There are a lot of Microsemi Corporation
JANTX2N2907AUA applications of single BJT transistors.
Inverter
Interface
Driver
Muting
This device has a DC current gain of 100 @ 150mA 10V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 1.6V @ 50mA, 500mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.Product package UA comes from the supplier.Collector Emitter Breakdown occurs at 60VV - Maximum voltage.A maximum collector current of 600mA volts is possible.
JANTX2N2907AUA Features
the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 1.6V @ 50mA, 500mA
the emitter base voltage is kept at 5V
the supplier device package of UA
JANTX2N2907AUA Applications
There are a lot of Microsemi Corporation
JANTX2N2907AUA applications of single BJT transistors.
Inverter
Interface
Driver
Muting
JANTX2N2907AUA More Descriptions
Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon
JANTX Series 500 mW 60 V 600mA Surface Mount PNP Small Signal Silicon Transistor
Trans GP BJT PNP 60V 0.6A 500mW 4-Pin UA Waffle
Small-Signal Bjt Ua Rohs Compliant: Yes |Microchip JANTX2N2907AUA
JANTX Series 500 mW 60 V 600mA Surface Mount PNP Small Signal Silicon Transistor
Trans GP BJT PNP 60V 0.6A 500mW 4-Pin UA Waffle
Small-Signal Bjt Ua Rohs Compliant: Yes |Microchip JANTX2N2907AUA
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