JANTX2N2907A

Microsemi Corporation JANTX2N2907A

Part Number:
JANTX2N2907A
Manufacturer:
Microsemi Corporation
Ventron No:
2465436-JANTX2N2907A
Description:
TRANS PNP 60V 0.6A TO18
ECAD Model:
Datasheet:
MIL-PRF-19500/291Y w/Amendment 1 Specification

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Specifications
Microsemi Corporation JANTX2N2907A technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation JANTX2N2907A.
  • Lifecycle Status
    IN PRODUCTION (Last Updated: 1 month ago)
  • Factory Lead Time
    8 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-206AA, TO-18-3 Metal Can
  • Number of Pins
    3
  • Supplier Device Package
    TO-206AA (TO-18)
  • Operating Temperature
    -65°C~200°C TJ
  • Packaging
    Bulk
  • Series
    Military, MIL-PRF-19500/291
  • Published
    2007
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Max Operating Temperature
    200°C
  • Min Operating Temperature
    -65°C
  • Max Power Dissipation
    500mW
  • Number of Elements
    1
  • Polarity
    PNP
  • Power Dissipation
    500mW
  • Power - Max
    500mW
  • Transistor Type
    PNP
  • Collector Emitter Voltage (VCEO)
    60V
  • Max Collector Current
    600mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    100 @ 150mA 10V
  • Current - Collector Cutoff (Max)
    50nA
  • Vce Saturation (Max) @ Ib, Ic
    1.6V @ 50mA, 500mA
  • Collector Emitter Breakdown Voltage
    60V
  • Voltage - Collector Emitter Breakdown (Max)
    60V
  • Current - Collector (Ic) (Max)
    600mA
  • Collector Emitter Saturation Voltage
    1.6V
  • Collector Base Voltage (VCBO)
    60V
  • Emitter Base Voltage (VEBO)
    5V
  • hFE Min
    100
  • Max Junction Temperature (Tj)
    200°C
  • Height
    5.33mm
  • Radiation Hardening
    No
  • RoHS Status
    Non-RoHS Compliant
  • Lead Free
    Contains Lead
Description
JANTX2N2907A Overview
This device has a DC current gain of 100 @ 150mA 10V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 1.6V allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 5V to achieve high efficiency.Single BJT transistor comes in a supplier device package of TO-206AA (TO-18).Detection of Collector Emitter Breakdown at 60V maximal voltage is present.The maximum collector current is 600mA volts.

JANTX2N2907A Features
the DC current gain for this device is 100 @ 150mA 10V
a collector emitter saturation voltage of 1.6V
the vce saturation(Max) is 1.6V @ 50mA, 500mA
the emitter base voltage is kept at 5V
the supplier device package of TO-206AA (TO-18)


JANTX2N2907A Applications
There are a lot of Microsemi Corporation
JANTX2N2907A applications of single BJT transistors.


Inverter
Interface
Driver
Muting
JANTX2N2907A More Descriptions
JANTX Series 60 V 600 mA Through Hole PNP Small Signal Silicon Transistor -TO-18
RF Small Signal Bipolar Transistor, 0.6A I(C), 1-Element, Very High Frequency Band, Silicon, PNP, TO-206AA
Trans GP BJT PNP 60V 0.6A 500mW 3-Pin TO-18 Bag
Small-Signal Bjt To-18 Rohs Compliant: Yes |Microchip JANTX2N2907A
RF SMALL SIGNAL TRANSISTOR BIPOLAR/HBT
French Electronic Distributor since 1988
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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