Microsemi Corporation JANTX2N2906A
- Part Number:
- JANTX2N2906A
- Manufacturer:
- Microsemi Corporation
- Ventron No:
- 2464822-JANTX2N2906A
- Description:
- TRANS PNP 60V 0.6A
Microsemi Corporation JANTX2N2906A technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation JANTX2N2906A.
- Lifecycle StatusIN PRODUCTION (Last Updated: 1 month ago)
- Factory Lead Time23 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-206AA, TO-18-3 Metal Can
- Number of Pins3
- Supplier Device PackageTO-18 (TO-206AA)
- Operating Temperature-65°C~200°C TJ
- PackagingBulk
- SeriesMilitary, MIL-PRF-19500/291
- Published2002
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Max Operating Temperature200°C
- Min Operating Temperature-65°C
- Max Power Dissipation500mW
- Number of Elements1
- PolarityPNP
- Power Dissipation500mW
- Power - Max500mW
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)60V
- Max Collector Current600mA
- DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 150mA 10V
- Current - Collector Cutoff (Max)50nA
- Vce Saturation (Max) @ Ib, Ic1.6V @ 50mA, 500mA
- Collector Emitter Breakdown Voltage60V
- Voltage - Collector Emitter Breakdown (Max)60V
- Current - Collector (Ic) (Max)600mA
- Collector Base Voltage (VCBO)60V
- Emitter Base Voltage (VEBO)5V
- Radiation HardeningNo
- RoHS StatusNon-RoHS Compliant
JANTX2N2906A Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 40 @ 150mA 10V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.6V @ 50mA, 500mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.TO-18 (TO-206AA) is the supplier device package for this product.This device displays a 60V maximum voltage - Collector Emitter Breakdown.During maximum operation, collector current can be as low as 600mA volts.
JANTX2N2906A Features
the DC current gain for this device is 40 @ 150mA 10V
the vce saturation(Max) is 1.6V @ 50mA, 500mA
the emitter base voltage is kept at 5V
the supplier device package of TO-18 (TO-206AA)
JANTX2N2906A Applications
There are a lot of Microsemi Corporation
JANTX2N2906A applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 40 @ 150mA 10V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.6V @ 50mA, 500mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.TO-18 (TO-206AA) is the supplier device package for this product.This device displays a 60V maximum voltage - Collector Emitter Breakdown.During maximum operation, collector current can be as low as 600mA volts.
JANTX2N2906A Features
the DC current gain for this device is 40 @ 150mA 10V
the vce saturation(Max) is 1.6V @ 50mA, 500mA
the emitter base voltage is kept at 5V
the supplier device package of TO-18 (TO-206AA)
JANTX2N2906A Applications
There are a lot of Microsemi Corporation
JANTX2N2906A applications of single BJT transistors.
Inverter
Interface
Driver
Muting
JANTX2N2906A More Descriptions
Trans GP BJT PNP 60V 0.6A 3-Pin TO-18
Small-Signal BJT _ TO-18
OEMs, CMs ONLY (NO BROKERS)
PNP - TRANSISTOR
Small-Signal BJT _ TO-18
OEMs, CMs ONLY (NO BROKERS)
PNP - TRANSISTOR
Popular Search Part Number
Related Keywords
Search Tags
Latest News
-
26 February 2024
A Complete Guide to DLW5BTM501SQ2L Common Mode Filter
Ⅰ. What is common mode filter?Ⅱ. DLW5BTM501SQ2L descriptionⅢ. Structure of DLW5BTM501SQ2L common mode filterⅣ. Who made DLW5BTM501SQ2L?Ⅴ. Frequency response range of DLW5BTM501SQ2L filterⅥ. Typical characteristics of DLW5BTM501SQ2LⅦ. Specifications... -
26 February 2024
STM32F407VGT6 Microcontroller Replacements, Application Fields and Package
Ⅰ. STM32F407VGT6 overviewⅡ. STM32F407VGT6 parameter conditionsⅢ. STM32F407VGT6 application areasⅣ. Package of STM32F407VGT6Ⅴ. Hardware design and software design of STM32F407VGT6 microcontrollerⅥ. Absolute maximum ratings of STM32F407VGT6Ⅶ. How to evaluate... -
27 February 2024
LD7575PS Manufacturer, Advantages and Disadvantages and Other Details
Ⅰ. What is LD7575PS?Ⅱ. Pins and functions of LD7575PSⅢ. Manufacturer of LD7575PSⅣ. How does LD7575PS achieve stable output voltage?Ⅴ. Block diagram of LD7575PSⅥ. What is the performance of... -
27 February 2024
BQ32000DR Structure, Technical Parameters, Layout Guidelines and Applications
Ⅰ. Overview of BQ32000DRⅡ. Structure of BQ32000DRⅢ. Simplified schematic of BQ32000DRⅣ. Technical parameters of BQ32000DRⅤ. Layout guidelines for BQ32000DRⅥ. Where to use BQ32000DR?Ⅶ. How does the backup power...
Help you to save your cost and time.
Reliable package for your goods.
Fast Reliable Delivery to save time.
Quality premium after-sale service.