JANTX2N2904

Microsemi Corporation JANTX2N2904

Part Number:
JANTX2N2904
Manufacturer:
Microsemi Corporation
Ventron No:
2470674-JANTX2N2904
Description:
TRANS PNP 40V 0.6A TO-39
ECAD Model:
Datasheet:
JANTX2N2904

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Specifications
Microsemi Corporation JANTX2N2904 technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation JANTX2N2904.
  • Lifecycle Status
    IN PRODUCTION (Last Updated: 4 weeks ago)
  • Factory Lead Time
    36 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-205AD, TO-39-3 Metal Can
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -65°C~200°C TJ
  • Packaging
    Bulk
  • Series
    Military, MIL-PRF-19500/290
  • Published
    2007
  • JESD-609 Code
    e0
  • Pbfree Code
    no
  • Part Status
    Discontinued
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin/Lead (Sn/Pb)
  • Subcategory
    Other Transistors
  • Max Power Dissipation
    600mW
  • Terminal Position
    BOTTOM
  • Terminal Form
    WIRE
  • Pin Count
    2
  • Qualification Status
    Qualified
  • Number of Elements
    1
  • Configuration
    SINGLE
  • Power Dissipation
    600mW
  • Case Connection
    COLLECTOR
  • Power - Max
    800mW
  • Transistor Application
    SWITCHING
  • Polarity/Channel Type
    PNP
  • Transistor Type
    PNP
  • Collector Emitter Voltage (VCEO)
    40V
  • Max Collector Current
    600mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    40 @ 150mA 10V
  • Current - Collector Cutoff (Max)
    1μA
  • Vce Saturation (Max) @ Ib, Ic
    1.6V @ 50mA, 500mA
  • Transition Frequency
    200MHz
  • Collector Base Voltage (VCBO)
    60V
  • Emitter Base Voltage (VEBO)
    5V
  • Turn On Time-Max (ton)
    45ns
  • Radiation Hardening
    No
  • RoHS Status
    Non-RoHS Compliant
Description
JANTX2N2904 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 40 @ 150mA 10V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.There is a transition frequency of 200MHz in the part.When collector current reaches its maximum, it can reach 600mA volts.

JANTX2N2904 Features
the DC current gain for this device is 40 @ 150mA 10V
the vce saturation(Max) is 1.6V @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 200MHz


JANTX2N2904 Applications
There are a lot of Microsemi Corporation
JANTX2N2904 applications of single BJT transistors.


Inverter
Interface
Driver
Muting
JANTX2N2904 More Descriptions
Trans GP BJT PNP 40V 0.6A 600mW 3-Pin TO-39 Bag
Small-Signal BJT _ TO-39
TRANS PNP 40V 0.6A TO39
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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