Microsemi Corporation JANTX2N2904
- Part Number:
- JANTX2N2904
- Manufacturer:
- Microsemi Corporation
- Ventron No:
- 2470674-JANTX2N2904
- Description:
- TRANS PNP 40V 0.6A TO-39
- Datasheet:
- JANTX2N2904
Microsemi Corporation JANTX2N2904 technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation JANTX2N2904.
- Lifecycle StatusIN PRODUCTION (Last Updated: 4 weeks ago)
- Factory Lead Time36 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-205AD, TO-39-3 Metal Can
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-65°C~200°C TJ
- PackagingBulk
- SeriesMilitary, MIL-PRF-19500/290
- Published2007
- JESD-609 Codee0
- Pbfree Codeno
- Part StatusDiscontinued
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin/Lead (Sn/Pb)
- SubcategoryOther Transistors
- Max Power Dissipation600mW
- Terminal PositionBOTTOM
- Terminal FormWIRE
- Pin Count2
- Qualification StatusQualified
- Number of Elements1
- ConfigurationSINGLE
- Power Dissipation600mW
- Case ConnectionCOLLECTOR
- Power - Max800mW
- Transistor ApplicationSWITCHING
- Polarity/Channel TypePNP
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)40V
- Max Collector Current600mA
- DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 150mA 10V
- Current - Collector Cutoff (Max)1μA
- Vce Saturation (Max) @ Ib, Ic1.6V @ 50mA, 500mA
- Transition Frequency200MHz
- Collector Base Voltage (VCBO)60V
- Emitter Base Voltage (VEBO)5V
- Turn On Time-Max (ton)45ns
- Radiation HardeningNo
- RoHS StatusNon-RoHS Compliant
JANTX2N2904 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 40 @ 150mA 10V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.There is a transition frequency of 200MHz in the part.When collector current reaches its maximum, it can reach 600mA volts.
JANTX2N2904 Features
the DC current gain for this device is 40 @ 150mA 10V
the vce saturation(Max) is 1.6V @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 200MHz
JANTX2N2904 Applications
There are a lot of Microsemi Corporation
JANTX2N2904 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 40 @ 150mA 10V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.There is a transition frequency of 200MHz in the part.When collector current reaches its maximum, it can reach 600mA volts.
JANTX2N2904 Features
the DC current gain for this device is 40 @ 150mA 10V
the vce saturation(Max) is 1.6V @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 200MHz
JANTX2N2904 Applications
There are a lot of Microsemi Corporation
JANTX2N2904 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
JANTX2N2904 More Descriptions
Trans GP BJT PNP 40V 0.6A 600mW 3-Pin TO-39 Bag
Small-Signal BJT _ TO-39
TRANS PNP 40V 0.6A TO39
Small-Signal BJT _ TO-39
TRANS PNP 40V 0.6A TO39
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