JANTX2N2605

Microsemi Corporation JANTX2N2605

Part Number:
JANTX2N2605
Manufacturer:
Microsemi Corporation
Ventron No:
2464804-JANTX2N2605
Description:
TRANS PNP 60V 0.03A
ECAD Model:
Datasheet:
JANTX2N2605

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Specifications
Microsemi Corporation JANTX2N2605 technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation JANTX2N2605.
  • Lifecycle Status
    IN PRODUCTION (Last Updated: 1 month ago)
  • Factory Lead Time
    23 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-206AB, TO-46-3 Metal Can
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -65°C~200°C TJ
  • Packaging
    Bulk
  • Series
    Military, MIL-PRF-19500/354
  • Published
    2007
  • JESD-609 Code
    e0
  • Pbfree Code
    no
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin/Lead (Sn/Pb)
  • Max Power Dissipation
    400mW
  • Terminal Position
    BOTTOM
  • Terminal Form
    WIRE
  • Pin Count
    3
  • Qualification Status
    Qualified
  • Number of Elements
    1
  • Configuration
    SINGLE
  • Power Dissipation
    400mW
  • Case Connection
    COLLECTOR
  • Transistor Application
    AMPLIFIER
  • Polarity/Channel Type
    PNP
  • Transistor Type
    PNP
  • Collector Emitter Voltage (VCEO)
    60V
  • Max Collector Current
    30mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    100 @ 10mA 5V
  • Current - Collector Cutoff (Max)
    10nA
  • Vce Saturation (Max) @ Ib, Ic
    300mV @ 500μA, 10mA
  • Collector Emitter Breakdown Voltage
    60V
  • Collector Base Voltage (VCBO)
    70V
  • Emitter Base Voltage (VEBO)
    6V
  • Radiation Hardening
    No
  • RoHS Status
    Non-RoHS Compliant
Description
JANTX2N2605 Overview
This device has a DC current gain of 100 @ 10mA 5V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 6V to achieve high efficiency.The maximum collector current is 30mA volts.

JANTX2N2605 Features
the DC current gain for this device is 100 @ 10mA 5V
the vce saturation(Max) is 300mV @ 500μA, 10mA
the emitter base voltage is kept at 6V


JANTX2N2605 Applications
There are a lot of Microsemi Corporation
JANTX2N2605 applications of single BJT transistors.


Inverter
Interface
Driver
Muting
JANTX2N2605 More Descriptions
Non-Compliant Through Hole PNP Bulk TO-46-3 3 Production (Last Updated: 1 month ago)
Trans GP BJT PNP 60V 0.03A 400mW 3-Pin TO-46 Bag
Small-Signal BJT _ TO-46
OEMs, CMs ONLY (NO BROKERS)
JANTX2N2605 --
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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