Microsemi Corporation JANTX2N2432A
- Part Number:
- JANTX2N2432A
- Manufacturer:
- Microsemi Corporation
- Ventron No:
- 2470589-JANTX2N2432A
- Description:
- TRANS NPN 45V 0.1A
- Datasheet:
- JANTX2N2432A
Microsemi Corporation JANTX2N2432A technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation JANTX2N2432A.
- Lifecycle StatusIN PRODUCTION (Last Updated: 1 month ago)
- Factory Lead Time23 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-206AA, TO-18-3 Metal Can
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-65°C~175°C TJ
- PackagingBulk
- SeriesMilitary, MIL-PRF-19500/313
- Published2007
- JESD-609 Codee0
- Pbfree Codeno
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin/Lead (Sn/Pb)
- Max Power Dissipation300mW
- Terminal PositionBOTTOM
- Terminal FormWIRE
- Pin Count3
- Qualification StatusQualified
- Number of Elements1
- ConfigurationSINGLE
- Power Dissipation300mW
- Case ConnectionCOLLECTOR
- Transistor ApplicationCHOPPER
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)45V
- Max Collector Current100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 1mA 5V
- Current - Collector Cutoff (Max)10nA
- Vce Saturation (Max) @ Ib, Ic0.15mV @ 500μA, 10V
- Transition Frequency20MHz
- Collector Base Voltage (VCBO)45V
- Emitter Base Voltage (VEBO)18V
- Radiation HardeningNo
- RoHS StatusNon-RoHS Compliant
JANTX2N2432A Overview
In this device, the DC current gain is 80 @ 1mA 5V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 0.15mV @ 500μA, 10V.With the emitter base voltage set at 18V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 20MHz.Single BJT transistor is possible for the collector current to fall as low as 100mA volts at Single BJT transistors maximum.
JANTX2N2432A Features
the DC current gain for this device is 80 @ 1mA 5V
the vce saturation(Max) is 0.15mV @ 500μA, 10V
the emitter base voltage is kept at 18V
a transition frequency of 20MHz
JANTX2N2432A Applications
There are a lot of Microsemi Corporation
JANTX2N2432A applications of single BJT transistors.
Inverter
Interface
Driver
Muting
In this device, the DC current gain is 80 @ 1mA 5V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 0.15mV @ 500μA, 10V.With the emitter base voltage set at 18V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 20MHz.Single BJT transistor is possible for the collector current to fall as low as 100mA volts at Single BJT transistors maximum.
JANTX2N2432A Features
the DC current gain for this device is 80 @ 1mA 5V
the vce saturation(Max) is 0.15mV @ 500μA, 10V
the emitter base voltage is kept at 18V
a transition frequency of 20MHz
JANTX2N2432A Applications
There are a lot of Microsemi Corporation
JANTX2N2432A applications of single BJT transistors.
Inverter
Interface
Driver
Muting
JANTX2N2432A More Descriptions
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-206AA
Trans GP BJT NPN 45V 0.1A 300mW 3-Pin TO-18 Bag
JANTX Series 45 V 0.1 A Through Hole NPN Silicon Low Power Transistor - TO-18
Compliant Through Hole NPN Bulk TO-18 3 Production (Last Updated: 1 month ago)
Trans GP BJT NPN 45V 0.1A 300mW 3-Pin TO-18 Bag
JANTX Series 45 V 0.1 A Through Hole NPN Silicon Low Power Transistor - TO-18
Compliant Through Hole NPN Bulk TO-18 3 Production (Last Updated: 1 month ago)
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