JANTX2N2432A

Microsemi Corporation JANTX2N2432A

Part Number:
JANTX2N2432A
Manufacturer:
Microsemi Corporation
Ventron No:
2470589-JANTX2N2432A
Description:
TRANS NPN 45V 0.1A
ECAD Model:
Datasheet:
JANTX2N2432A

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Specifications
Microsemi Corporation JANTX2N2432A technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation JANTX2N2432A.
  • Lifecycle Status
    IN PRODUCTION (Last Updated: 1 month ago)
  • Factory Lead Time
    23 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-206AA, TO-18-3 Metal Can
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -65°C~175°C TJ
  • Packaging
    Bulk
  • Series
    Military, MIL-PRF-19500/313
  • Published
    2007
  • JESD-609 Code
    e0
  • Pbfree Code
    no
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin/Lead (Sn/Pb)
  • Max Power Dissipation
    300mW
  • Terminal Position
    BOTTOM
  • Terminal Form
    WIRE
  • Pin Count
    3
  • Qualification Status
    Qualified
  • Number of Elements
    1
  • Configuration
    SINGLE
  • Power Dissipation
    300mW
  • Case Connection
    COLLECTOR
  • Transistor Application
    CHOPPER
  • Polarity/Channel Type
    NPN
  • Transistor Type
    NPN
  • Collector Emitter Voltage (VCEO)
    45V
  • Max Collector Current
    100mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    80 @ 1mA 5V
  • Current - Collector Cutoff (Max)
    10nA
  • Vce Saturation (Max) @ Ib, Ic
    0.15mV @ 500μA, 10V
  • Transition Frequency
    20MHz
  • Collector Base Voltage (VCBO)
    45V
  • Emitter Base Voltage (VEBO)
    18V
  • Radiation Hardening
    No
  • RoHS Status
    Non-RoHS Compliant
Description
JANTX2N2432A Overview
In this device, the DC current gain is 80 @ 1mA 5V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 0.15mV @ 500μA, 10V.With the emitter base voltage set at 18V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 20MHz.Single BJT transistor is possible for the collector current to fall as low as 100mA volts at Single BJT transistors maximum.

JANTX2N2432A Features
the DC current gain for this device is 80 @ 1mA 5V
the vce saturation(Max) is 0.15mV @ 500μA, 10V
the emitter base voltage is kept at 18V
a transition frequency of 20MHz


JANTX2N2432A Applications
There are a lot of Microsemi Corporation
JANTX2N2432A applications of single BJT transistors.


Inverter
Interface
Driver
Muting
JANTX2N2432A More Descriptions
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-206AA
Trans GP BJT NPN 45V 0.1A 300mW 3-Pin TO-18 Bag
JANTX Series 45 V 0.1 A Through Hole NPN Silicon Low Power Transistor - TO-18
Compliant Through Hole NPN Bulk TO-18 3 Production (Last Updated: 1 month ago)
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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