JANTX2N2219AL

Microsemi Corporation JANTX2N2219AL

Part Number:
JANTX2N2219AL
Manufacturer:
Microsemi Corporation
Ventron No:
2464796-JANTX2N2219AL
Description:
TRANS NPN 50V 0.8A TO46
ECAD Model:
Datasheet:
JANTX2N2219AL

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Specifications
Microsemi Corporation JANTX2N2219AL technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation JANTX2N2219AL.
  • Lifecycle Status
    IN PRODUCTION (Last Updated: 1 month ago)
  • Factory Lead Time
    23 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-205AD, TO-39-3 Metal Can
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~200°C TJ
  • Packaging
    Bulk
  • Series
    Military, MIL-PRF-19500/251
  • Published
    2007
  • JESD-609 Code
    e0
  • Pbfree Code
    no
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin/Lead (Sn/Pb)
  • Max Power Dissipation
    800mW
  • Terminal Position
    BOTTOM
  • Terminal Form
    WIRE
  • Pin Count
    3
  • Qualification Status
    Qualified
  • Number of Elements
    1
  • Configuration
    SINGLE
  • Power Dissipation
    800mW
  • Case Connection
    COLLECTOR
  • Transistor Application
    SWITCHING
  • Polarity/Channel Type
    NPN
  • Transistor Type
    NPN
  • Collector Emitter Voltage (VCEO)
    50V
  • Max Collector Current
    800mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    100 @ 150mA 10V
  • Current - Collector Cutoff (Max)
    10nA
  • JEDEC-95 Code
    TO-5
  • Vce Saturation (Max) @ Ib, Ic
    1V @ 50mA, 500mA
  • Collector Emitter Breakdown Voltage
    50V
  • Collector Base Voltage (VCBO)
    75V
  • Emitter Base Voltage (VEBO)
    6V
  • Radiation Hardening
    No
  • RoHS Status
    Non-RoHS Compliant
Description
JANTX2N2219AL Overview
This device has a DC current gain of 100 @ 150mA 10V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 6V to achieve high efficiency.The maximum collector current is 800mA volts.

JANTX2N2219AL Features
the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at 6V


JANTX2N2219AL Applications
There are a lot of Microsemi Corporation
JANTX2N2219AL applications of single BJT transistors.


Inverter
Interface
Driver
Muting
JANTX2N2219AL More Descriptions
Trans GP BJT NPN 50V 0.8A 3-Pin TO-5
Small-Signal BJT _ TO-5
TRANS NPN 50V 0.8A TO39
TRANS NPN 50V 0.8A TO46
JANTX2N2219AL --
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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