Microsemi Corporation JANTX2N2219A
- Part Number:
- JANTX2N2219A
- Manufacturer:
- Microsemi Corporation
- Ventron No:
- 3069092-JANTX2N2219A
- Description:
- TRANS NPN 50V 0.8A TO46
- Datasheet:
- JANTX2N2219A
Microsemi Corporation JANTX2N2219A technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation JANTX2N2219A.
- Lifecycle StatusIN PRODUCTION (Last Updated: 1 month ago)
- Factory Lead Time8 Weeks
- Contact PlatingLead, Tin
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-205AD, TO-39-3 Metal Can
- Number of Pins3
- Supplier Device PackageTO-39
- Operating Temperature-55°C~200°C TJ
- PackagingBulk
- SeriesMilitary, MIL-PRF-19500/251
- Published2007
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Max Operating Temperature200°C
- Min Operating Temperature-55°C
- Max Power Dissipation800mW
- Number of Elements1
- PolarityNPN
- Power Dissipation800mW
- Power - Max800mW
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)50V
- Max Collector Current800mA
- DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 150mA 10V
- Current - Collector Cutoff (Max)10nA
- Vce Saturation (Max) @ Ib, Ic1V @ 50mA, 500mA
- Collector Emitter Breakdown Voltage50V
- Voltage - Collector Emitter Breakdown (Max)50V
- Current - Collector (Ic) (Max)800mA
- Collector Base Voltage (VCBO)75V
- Emitter Base Voltage (VEBO)6V
- Radiation HardeningNo
- RoHS StatusNon-RoHS Compliant
- Lead FreeContains Lead
JANTX2N2219A Overview
In this device, the DC current gain is 100 @ 150mA 10V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1V @ 50mA, 500mA.With the emitter base voltage set at 6V, an efficient operation can be achieved.Product comes in the supplier's device package TO-39.There is a 50V maximal voltage in the device due to collector-emitter breakdown.Single BJT transistor is possible for the collector current to fall as low as 800mA volts at Single BJT transistors maximum.
JANTX2N2219A Features
the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at 6V
the supplier device package of TO-39
JANTX2N2219A Applications
There are a lot of Microsemi Corporation
JANTX2N2219A applications of single BJT transistors.
Inverter
Interface
Driver
Muting
In this device, the DC current gain is 100 @ 150mA 10V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1V @ 50mA, 500mA.With the emitter base voltage set at 6V, an efficient operation can be achieved.Product comes in the supplier's device package TO-39.There is a 50V maximal voltage in the device due to collector-emitter breakdown.Single BJT transistor is possible for the collector current to fall as low as 800mA volts at Single BJT transistors maximum.
JANTX2N2219A Features
the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at 6V
the supplier device package of TO-39
JANTX2N2219A Applications
There are a lot of Microsemi Corporation
JANTX2N2219A applications of single BJT transistors.
Inverter
Interface
Driver
Muting
JANTX2N2219A More Descriptions
Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-5
JANTX Series 50 V 800 mA NPN Through Hole Switching Silicon Transistor - TO-39
Trans GP BJT NPN 50V 0.8A 800mW 3-Pin TO-39 Bag
French Electronic Distributor since 1988
JANTX Series 50 V 800 mA NPN Through Hole Switching Silicon Transistor - TO-39
Trans GP BJT NPN 50V 0.8A 800mW 3-Pin TO-39 Bag
French Electronic Distributor since 1988
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