JANTX2N2219A

Microsemi Corporation JANTX2N2219A

Part Number:
JANTX2N2219A
Manufacturer:
Microsemi Corporation
Ventron No:
3069092-JANTX2N2219A
Description:
TRANS NPN 50V 0.8A TO46
ECAD Model:
Datasheet:
JANTX2N2219A

Quick Request Quote

Please send RFQ , We will respond immediately.

Part Number
Quantity
Company
E-mail
Phone
Comments
Specifications
Microsemi Corporation JANTX2N2219A technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation JANTX2N2219A.
  • Lifecycle Status
    IN PRODUCTION (Last Updated: 1 month ago)
  • Factory Lead Time
    8 Weeks
  • Contact Plating
    Lead, Tin
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-205AD, TO-39-3 Metal Can
  • Number of Pins
    3
  • Supplier Device Package
    TO-39
  • Operating Temperature
    -55°C~200°C TJ
  • Packaging
    Bulk
  • Series
    Military, MIL-PRF-19500/251
  • Published
    2007
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Max Operating Temperature
    200°C
  • Min Operating Temperature
    -55°C
  • Max Power Dissipation
    800mW
  • Number of Elements
    1
  • Polarity
    NPN
  • Power Dissipation
    800mW
  • Power - Max
    800mW
  • Transistor Type
    NPN
  • Collector Emitter Voltage (VCEO)
    50V
  • Max Collector Current
    800mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    100 @ 150mA 10V
  • Current - Collector Cutoff (Max)
    10nA
  • Vce Saturation (Max) @ Ib, Ic
    1V @ 50mA, 500mA
  • Collector Emitter Breakdown Voltage
    50V
  • Voltage - Collector Emitter Breakdown (Max)
    50V
  • Current - Collector (Ic) (Max)
    800mA
  • Collector Base Voltage (VCBO)
    75V
  • Emitter Base Voltage (VEBO)
    6V
  • Radiation Hardening
    No
  • RoHS Status
    Non-RoHS Compliant
  • Lead Free
    Contains Lead
Description
JANTX2N2219A Overview
In this device, the DC current gain is 100 @ 150mA 10V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1V @ 50mA, 500mA.With the emitter base voltage set at 6V, an efficient operation can be achieved.Product comes in the supplier's device package TO-39.There is a 50V maximal voltage in the device due to collector-emitter breakdown.Single BJT transistor is possible for the collector current to fall as low as 800mA volts at Single BJT transistors maximum.

JANTX2N2219A Features
the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at 6V
the supplier device package of TO-39


JANTX2N2219A Applications
There are a lot of Microsemi Corporation
JANTX2N2219A applications of single BJT transistors.


Inverter
Interface
Driver
Muting
JANTX2N2219A More Descriptions
Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-5
JANTX Series 50 V 800 mA NPN Through Hole Switching Silicon Transistor - TO-39
Trans GP BJT NPN 50V 0.8A 800mW 3-Pin TO-39 Bag
French Electronic Distributor since 1988
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

Latest News

  • cost

    Help you to save your cost and time.

  • package

    Reliable package for your goods.

  • fast

    Fast Reliable Delivery to save time.

  • service

    Quality premium after-sale service.