Microsemi Corporation JANTX2N1893
- Part Number:
- JANTX2N1893
- Manufacturer:
- Microsemi Corporation
- Ventron No:
- 2466418-JANTX2N1893
- Description:
- TRANS NPN 80V 0.5A TO-5
- Datasheet:
- JANTX2N1893
Microsemi Corporation JANTX2N1893 technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation JANTX2N1893.
- Lifecycle StatusIN PRODUCTION (Last Updated: 1 month ago)
- Factory Lead Time20 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-205AA, TO-5-3 Metal Can
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-65°C~200°C TJ
- PackagingBulk
- SeriesMilitary, MIL-PRF-19500/182
- Published2002
- JESD-609 Codee0
- Pbfree Codeno
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin/Lead (Sn/Pb)
- Max Power Dissipation800mW
- Terminal PositionBOTTOM
- Terminal FormWIRE
- Pin Count2
- Qualification StatusQualified
- Number of Elements1
- ConfigurationSINGLE
- Power Dissipation800mW
- Case ConnectionCOLLECTOR
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)80V
- Max Collector Current500mA
- DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 150mA 10V
- Current - Collector Cutoff (Max)10μA ICBO
- Vce Saturation (Max) @ Ib, Ic5V @ 15mA, 150mA
- Collector Base Voltage (VCBO)120V
- Emitter Base Voltage (VEBO)7V
- Radiation HardeningNo
- RoHS StatusNon-RoHS Compliant
JANTX2N1893 Overview
In this device, the DC current gain is 40 @ 150mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 5V @ 15mA, 150mA.Keeping the emitter base voltage at 7V allows for a high level of efficiency.Maximum collector currents can be below 500mA volts.
JANTX2N1893 Features
the DC current gain for this device is 40 @ 150mA 10V
the vce saturation(Max) is 5V @ 15mA, 150mA
the emitter base voltage is kept at 7V
JANTX2N1893 Applications
There are a lot of Microsemi Corporation
JANTX2N1893 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
In this device, the DC current gain is 40 @ 150mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 5V @ 15mA, 150mA.Keeping the emitter base voltage at 7V allows for a high level of efficiency.Maximum collector currents can be below 500mA volts.
JANTX2N1893 Features
the DC current gain for this device is 40 @ 150mA 10V
the vce saturation(Max) is 5V @ 15mA, 150mA
the emitter base voltage is kept at 7V
JANTX2N1893 Applications
There are a lot of Microsemi Corporation
JANTX2N1893 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
JANTX2N1893 More Descriptions
Small Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon
Compliant Through Hole NPN Bulk TO-5 3 Production (Last Updated: 1 month ago)
Trans GP BJT NPN 80V 0.5A 800mW 3-Pin TO-5 Bag
Power Bjt To-5 Rohs Compliant: Yes |Microchip JANTX2N1893
Compliant Through Hole NPN Bulk TO-5 3 Production (Last Updated: 1 month ago)
Trans GP BJT NPN 80V 0.5A 800mW 3-Pin TO-5 Bag
Power Bjt To-5 Rohs Compliant: Yes |Microchip JANTX2N1893
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