Microsemi Corporation JANTX2N1711
- Part Number:
- JANTX2N1711
- Manufacturer:
- Microsemi Corporation
- Ventron No:
- 3585574-JANTX2N1711
- Description:
- TRANS NPN 30V 0.5A TO-5
- ECAD Model:
-
- Datasheet:
- JANTX2N1711
Microsemi Corporation JANTX2N1711 technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation JANTX2N1711.
- Lifecycle StatusIN PRODUCTION (Last Updated: 3 weeks ago)
- Factory Lead Time23 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-205AA, TO-5-3 Metal Can
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-65°C~200°C TJ
- PackagingBulk
- SeriesMilitary, MIL-PRF-19500/225
- Published2002
- JESD-609 Codee0
- Pbfree Codeno
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin/Lead (Sn/Pb)
- Max Power Dissipation800mW
- Terminal PositionBOTTOM
- Terminal FormWIRE
- Pin Count3
- Qualification StatusQualified
- Number of Elements1
- ConfigurationSINGLE
- Power Dissipation800mW
- Case ConnectionCOLLECTOR
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)30V
- Max Collector Current500mA
- DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 150mA 10V
- Current - Collector Cutoff (Max)10nA ICBO
- Vce Saturation (Max) @ Ib, Ic1.5V @ 15mA, 150mA
- Collector Base Voltage (VCBO)75V
- Emitter Base Voltage (VEBO)7V
- Radiation HardeningNo
- RoHS StatusNon-RoHS Compliant
JANTX2N1711 Overview
In this device, the DC current gain is 100 @ 150mA 10V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.5V @ 15mA, 150mA.With the emitter base voltage set at 7V, an efficient operation can be achieved.Single BJT transistor is possible for the collector current to fall as low as 500mA volts at Single BJT transistors maximum.
JANTX2N1711 Features
the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 1.5V @ 15mA, 150mA
the emitter base voltage is kept at 7V
JANTX2N1711 Applications
There are a lot of Microsemi Corporation
JANTX2N1711 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
In this device, the DC current gain is 100 @ 150mA 10V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.5V @ 15mA, 150mA.With the emitter base voltage set at 7V, an efficient operation can be achieved.Single BJT transistor is possible for the collector current to fall as low as 500mA volts at Single BJT transistors maximum.
JANTX2N1711 Features
the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 1.5V @ 15mA, 150mA
the emitter base voltage is kept at 7V
JANTX2N1711 Applications
There are a lot of Microsemi Corporation
JANTX2N1711 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
JANTX2N1711 More Descriptions
Trans GP BJT NPN 30V 0.5A 800mW 3-Pin TO-5 Tray
Non-Compliant Through Hole NPN Bulk TO-5 3 Production (Last Updated: 1 month ago) 800 mW
Power Bjt To-5 Rohs Compliant: Yes |Microchip JANTX2N1711
Non-Compliant Through Hole NPN Bulk TO-5 3 Production (Last Updated: 1 month ago) 800 mW
Power Bjt To-5 Rohs Compliant: Yes |Microchip JANTX2N1711
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