JANS2N3019

Microsemi Corporation JANS2N3019

Part Number:
JANS2N3019
Manufacturer:
Microsemi Corporation
Ventron No:
2464115-JANS2N3019
Description:
TRANS NPN 80V 1A TO-5
ECAD Model:
Datasheet:
JANS2N3019

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Specifications
Microsemi Corporation JANS2N3019 technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation JANS2N3019.
  • Lifecycle Status
    IN PRODUCTION (Last Updated: 4 weeks ago)
  • Factory Lead Time
    33 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-205AA, TO-5-3 Metal Can
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -65°C~200°C TJ
  • Packaging
    Bulk
  • Series
    Military, MIL-PRF-19500/391
  • Published
    2007
  • Pbfree Code
    no
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Max Power Dissipation
    800mW
  • Terminal Position
    BOTTOM
  • Terminal Form
    WIRE
  • Pin Count
    2
  • Number of Elements
    1
  • Configuration
    SINGLE
  • Power Dissipation
    800mW
  • Polarity/Channel Type
    NPN
  • Transistor Type
    NPN
  • Collector Emitter Voltage (VCEO)
    80V
  • Max Collector Current
    1A
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    50 @ 500mA 10V
  • Current - Collector Cutoff (Max)
    10μA ICBO
  • JEDEC-95 Code
    TO-205AD
  • Vce Saturation (Max) @ Ib, Ic
    500mV @ 50mA, 500mA
  • Collector Emitter Breakdown Voltage
    80V
  • Collector Base Voltage (VCBO)
    140V
  • Emitter Base Voltage (VEBO)
    7V
  • Radiation Hardening
    No
  • RoHS Status
    Non-RoHS Compliant
Description
JANS2N3019 Overview
DC current gain in this device equals 50 @ 500mA 10V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 50mA, 500mA.An emitter's base voltage can be kept at 7V to gain high efficiency.In extreme cases, the collector current can be as low as 1A volts.

JANS2N3019 Features
the DC current gain for this device is 50 @ 500mA 10V
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 7V


JANS2N3019 Applications
There are a lot of Microsemi Corporation
JANS2N3019 applications of single BJT transistors.


Inverter
Interface
Driver
Muting
JANS2N3019 More Descriptions
Compliant Through Hole NPN TO-39 3 Production (Last Updated: 1 month ago) 800 mW
Trans GP BJT NPN 80V 1A 800mW 3-Pin TO-5AA Tray
Small-Signal BJT _ TO-5
JANS2N3019 --
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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