Microsemi Corporation JANS2N3019
- Part Number:
- JANS2N3019
- Manufacturer:
- Microsemi Corporation
- Ventron No:
- 2464115-JANS2N3019
- Description:
- TRANS NPN 80V 1A TO-5
- Datasheet:
- JANS2N3019
Microsemi Corporation JANS2N3019 technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation JANS2N3019.
- Lifecycle StatusIN PRODUCTION (Last Updated: 4 weeks ago)
- Factory Lead Time33 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-205AA, TO-5-3 Metal Can
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-65°C~200°C TJ
- PackagingBulk
- SeriesMilitary, MIL-PRF-19500/391
- Published2007
- Pbfree Codeno
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Max Power Dissipation800mW
- Terminal PositionBOTTOM
- Terminal FormWIRE
- Pin Count2
- Number of Elements1
- ConfigurationSINGLE
- Power Dissipation800mW
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)80V
- Max Collector Current1A
- DC Current Gain (hFE) (Min) @ Ic, Vce50 @ 500mA 10V
- Current - Collector Cutoff (Max)10μA ICBO
- JEDEC-95 CodeTO-205AD
- Vce Saturation (Max) @ Ib, Ic500mV @ 50mA, 500mA
- Collector Emitter Breakdown Voltage80V
- Collector Base Voltage (VCBO)140V
- Emitter Base Voltage (VEBO)7V
- Radiation HardeningNo
- RoHS StatusNon-RoHS Compliant
JANS2N3019 Overview
DC current gain in this device equals 50 @ 500mA 10V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 50mA, 500mA.An emitter's base voltage can be kept at 7V to gain high efficiency.In extreme cases, the collector current can be as low as 1A volts.
JANS2N3019 Features
the DC current gain for this device is 50 @ 500mA 10V
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 7V
JANS2N3019 Applications
There are a lot of Microsemi Corporation
JANS2N3019 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
DC current gain in this device equals 50 @ 500mA 10V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 50mA, 500mA.An emitter's base voltage can be kept at 7V to gain high efficiency.In extreme cases, the collector current can be as low as 1A volts.
JANS2N3019 Features
the DC current gain for this device is 50 @ 500mA 10V
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 7V
JANS2N3019 Applications
There are a lot of Microsemi Corporation
JANS2N3019 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
JANS2N3019 More Descriptions
Compliant Through Hole NPN TO-39 3 Production (Last Updated: 1 month ago) 800 mW
Trans GP BJT NPN 80V 1A 800mW 3-Pin TO-5AA Tray
Small-Signal BJT _ TO-5
JANS2N3019 --
Trans GP BJT NPN 80V 1A 800mW 3-Pin TO-5AA Tray
Small-Signal BJT _ TO-5
JANS2N3019 --
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