Microsemi Corporation JANS2N2222A
- Part Number:
- JANS2N2222A
- Manufacturer:
- Microsemi Corporation
- Ventron No:
- 2464082-JANS2N2222A
- Description:
- TRANS NPN 50V 0.8A TO-18
- ECAD Model:
-
Microsemi Corporation JANS2N2222A technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation JANS2N2222A.
- Lifecycle StatusIN PRODUCTION (Last Updated: 4 weeks ago)
- Factory Lead Time33 Weeks
- Contact PlatingLead, Tin
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-206AA, TO-18-3 Metal Can
- Number of Pins3
- Supplier Device PackageTO-18 (TO-206AA)
- Operating Temperature-65°C~200°C TJ
- PackagingBulk
- SeriesMilitary, MIL-PRF-19500/255
- Published2007
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Max Operating Temperature200°C
- Min Operating Temperature-65°C
- Max Power Dissipation500mW
- Number of Elements1
- PolarityNPN
- Power Dissipation500mW
- Power - Max500mW
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)50V
- Max Collector Current800mA
- DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 150mA 10V
- Current - Collector Cutoff (Max)50nA
- Vce Saturation (Max) @ Ib, Ic1V @ 50mA, 500mA
- Collector Emitter Breakdown Voltage50V
- Voltage - Collector Emitter Breakdown (Max)50V
- Current - Collector (Ic) (Max)800mA
- Collector Base Voltage (VCBO)75V
- Emitter Base Voltage (VEBO)6V
- Radiation HardeningNo
- RoHS StatusNon-RoHS Compliant
JANS2N2222A Overview
DC current gain in this device equals 100 @ 150mA 10V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1V @ 50mA, 500mA.An emitter's base voltage can be kept at 6V to gain high efficiency.Product comes in TO-18 (TO-206AA) supplier package.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.In extreme cases, the collector current can be as low as 800mA volts.
JANS2N2222A Features
the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at 6V
the supplier device package of TO-18 (TO-206AA)
JANS2N2222A Applications
There are a lot of Microsemi Corporation
JANS2N2222A applications of single BJT transistors.
Inverter
Interface
Driver
Muting
DC current gain in this device equals 100 @ 150mA 10V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1V @ 50mA, 500mA.An emitter's base voltage can be kept at 6V to gain high efficiency.Product comes in TO-18 (TO-206AA) supplier package.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.In extreme cases, the collector current can be as low as 800mA volts.
JANS2N2222A Features
the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at 6V
the supplier device package of TO-18 (TO-206AA)
JANS2N2222A Applications
There are a lot of Microsemi Corporation
JANS2N2222A applications of single BJT transistors.
Inverter
Interface
Driver
Muting
JANS2N2222A More Descriptions
NPN SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/255 | TRANS NPN 50V 0.8A TO-18
2N2222A Series NPN 50 V 800 mA Silicon Switching Transistor - TO-18
Trans GP BJT NPN 50V 0.8A 500mW 3-Pin TO-18 Tray
2N2222A Series NPN 50 V 800 mA Silicon Switching Transistor - TO-18
Trans GP BJT NPN 50V 0.8A 500mW 3-Pin TO-18 Tray
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