Microsemi Corporation JAN2N697
- Part Number:
- JAN2N697
- Manufacturer:
- Microsemi Corporation
- Ventron No:
- 2470769-JAN2N697
- Description:
- TRANS NPN 40V
- ECAD Model:
-
- Datasheet:
- JAN2N697
Microsemi Corporation JAN2N697 technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation JAN2N697.
- Lifecycle StatusIN PRODUCTION (Last Updated: 3 weeks ago)
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-205AA, TO-5-3 Metal Can
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-65°C~200°C TJ
- PackagingBulk
- SeriesMilitary, MIL-PRF-19500/99
- JESD-609 Codee0
- Pbfree Codeno
- Part StatusDiscontinued
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- Terminal FinishTin/Lead (Sn/Pb)
- Max Power Dissipation600mW
- Terminal PositionBOTTOM
- Terminal FormWIRE
- Qualification StatusQualified
- Number of Elements1
- ConfigurationSINGLE
- Power Dissipation600mW
- Transistor ApplicationSWITCHING
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)40V
- DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 150mA 10V
- Current - Collector Cutoff (Max)10μA ICBO
- Vce Saturation (Max) @ Ib, Ic1.5V @ 15mA, 150mA
- Collector Base Voltage (VCBO)60V
- Emitter Base Voltage (VEBO)5V
- Turn On Time-Max (ton)200ns
- Radiation HardeningNo
- RoHS StatusNon-RoHS Compliant
JAN2N697 Overview
This device has a DC current gain of 40 @ 150mA 10V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 5V to achieve high efficiency.
JAN2N697 Features
the DC current gain for this device is 40 @ 150mA 10V
the vce saturation(Max) is 1.5V @ 15mA, 150mA
the emitter base voltage is kept at 5V
JAN2N697 Applications
There are a lot of Microsemi Corporation
JAN2N697 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
This device has a DC current gain of 40 @ 150mA 10V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 5V to achieve high efficiency.
JAN2N697 Features
the DC current gain for this device is 40 @ 150mA 10V
the vce saturation(Max) is 1.5V @ 15mA, 150mA
the emitter base voltage is kept at 5V
JAN2N697 Applications
There are a lot of Microsemi Corporation
JAN2N697 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
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