Microsemi Corporation JAN2N2369A
- Part Number:
- JAN2N2369A
- Manufacturer:
- Microsemi Corporation
- Ventron No:
- 2465244-JAN2N2369A
- Description:
- TRANS NPN 15V TO18
- ECAD Model:
-
- Datasheet:
- JAN2N2369A
Microsemi Corporation JAN2N2369A technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation JAN2N2369A.
- Lifecycle StatusIN PRODUCTION (Last Updated: 1 month ago)
- Factory Lead Time23 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-206AA, TO-18-3 Metal Can
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-65°C~200°C TJ
- PackagingBulk
- SeriesMilitary, MIL-PRF-19500/317
- Published2001
- JESD-609 Codee0
- Pbfree Codeno
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- Terminal FinishTin/Lead (Sn/Pb)
- SubcategoryOther Transistors
- Max Power Dissipation360mW
- Terminal PositionBOTTOM
- Terminal FormWIRE
- Pin Count3
- Qualification StatusQualified
- Number of Elements1
- ConfigurationSINGLE
- Power Dissipation360mW
- Case ConnectionCOLLECTOR
- Transistor ApplicationSWITCHING
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)15V
- Max Collector Current400nA
- DC Current Gain (hFE) (Min) @ Ic, Vce20 @ 100mA 1V
- Vce Saturation (Max) @ Ib, Ic450mV @ 10mA, 100mA
- Collector Emitter Breakdown Voltage15V
- Transition Frequency500MHz
- Collector Base Voltage (VCBO)40V
- Emitter Base Voltage (VEBO)4.5V
- Radiation HardeningNo
- RoHS StatusNon-RoHS Compliant
JAN2N2369A Overview
This device has a DC current gain of 20 @ 100mA 1V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 450mV @ 10mA, 100mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 4.5V.As you can see, the part has a transition frequency of 500MHz.A maximum collector current of 400nA volts is possible.
JAN2N2369A Features
the DC current gain for this device is 20 @ 100mA 1V
the vce saturation(Max) is 450mV @ 10mA, 100mA
the emitter base voltage is kept at 4.5V
a transition frequency of 500MHz
JAN2N2369A Applications
There are a lot of Microsemi Corporation
JAN2N2369A applications of single BJT transistors.
Inverter
Interface
Driver
Muting
This device has a DC current gain of 20 @ 100mA 1V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 450mV @ 10mA, 100mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 4.5V.As you can see, the part has a transition frequency of 500MHz.A maximum collector current of 400nA volts is possible.
JAN2N2369A Features
the DC current gain for this device is 20 @ 100mA 1V
the vce saturation(Max) is 450mV @ 10mA, 100mA
the emitter base voltage is kept at 4.5V
a transition frequency of 500MHz
JAN2N2369A Applications
There are a lot of Microsemi Corporation
JAN2N2369A applications of single BJT transistors.
Inverter
Interface
Driver
Muting
JAN2N2369A More Descriptions
Small Signal Bipolar Transistor, 0.2A I(C), 15V V(BR)CEO, 1-Element, NPN, Silicon, TO-18
Trans GP BJT NPN 15V 360mW 3-Pin TO-18 Bag
Small-Signal Bjt To-18 Rohs Compliant: Yes |Microchip JAN2N2369A
French Electronic Distributor since 1988
Trans GP BJT NPN 15V 360mW 3-Pin TO-18 Bag
Small-Signal Bjt To-18 Rohs Compliant: Yes |Microchip JAN2N2369A
French Electronic Distributor since 1988
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