IXYS IXXN200N60C3H1

Name: IXXN200N60C3H1
Brand: IXYS
SKU: 3587111-IXXN200N60C3H1
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IXXN200N60C3H1

Manufacturer:: IXYS

Ventron No:: 3587111-IXXN200N60C3H1

Description:: IGBT 600V 200A SOT-227

ECAD Model:

Datasheet:: IXXN200N60C3H1

Specifications

IXYS IXXN200N60C3H1 technical specifications, attributes, parameters and parts with similar specifications to IXYS IXXN200N60C3H1.

Factory Lead Time
14 Weeks
Mount
Chassis Mount
Mounting Type
Chassis Mount
Package / Case
SOT-227-4, miniBLOC
Operating Temperature
-55°C~150°C TJ
Series
XPT™, GenX3™
Published
2013
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Subcategory
Insulated Gate BIP Transistors
Max Power Dissipation
780W
Number of Elements
1
Configuration
Single
Power - Max
780W
Input
Standard
Collector Emitter Voltage (VCEO)
2.1V
Max Collector Current
200A
Current - Collector Cutoff (Max)
50μA
Collector Emitter Breakdown Voltage
600V
Input Capacitance
9.9nF
Vce(on) (Max) @ Vge, Ic
2.1V @ 15V, 100A
IGBT Type
PT
NTC Thermistor
No
Gate-Emitter Voltage-Max
20V
Input Capacitance (Cies) @ Vce
9.9nF @ 25V
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

IXXN200N60C3H1 Overview
This product is manufactured by IXYS and belongs to the category of Transistors - IGBTs - Modules. The images we provide are for reference only, for detailed product information please see specification sheet IXXN200N60C3H1 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of IXXN200N60C3H1. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.

IXXN200N60C3H1 More Descriptions

Trans IGBT Chip N-CH 600V 200A
600V, 98A, SOT-227, IGBT W/ SONIC DIODE
IGBT MOD 600V 200A 780W SOT227B

Product Comparison

The three parts on the right have similar specifications to IXXN200N60C3H1.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Operating Temperature

Series

Published

Part Status

Moisture Sensitivity Level (MSL)

Subcategory

Max Power Dissipation

Number of Elements

Configuration

Power - Max

Input

Collector Emitter Voltage (VCEO)

Max Collector Current

Current - Collector Cutoff (Max)

Collector Emitter Breakdown Voltage

Input Capacitance

Vce(on) (Max) @ Vge, Ic

IGBT Type

NTC Thermistor

Gate-Emitter Voltage-Max

Input Capacitance (Cies) @ Vce

RoHS Status

Lead Free

Transistor Element Material

Number of Terminations

Additional Feature

Terminal Position

Terminal Form

Base Part Number

Pin Count

JESD-30 Code

Case Connection

Transistor Application

Polarity/Channel Type

Turn On Time

Turn Off Time-Nom (toff)

VCEsat-Max

Weight

Collector Emitter Saturation Voltage

Turn On Delay Time

Turn-Off Delay Time

View Compare
IXXN200N60C3H1

IXYS

14 Weeks

Chassis Mount

Chassis Mount

SOT-227-4, miniBLOC

-55°C~150°C TJ

XPT™, GenX3™

2013

Active

1 (Unlimited)

Insulated Gate BIP Transistors

780W

1

Single

780W

Standard

2.1V

200A

50μA

600V

9.9nF

2.1V @ 15V, 100A

PT

No

20V

9.9nF @ 25V

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
IXXN100N60B3H1

IXYS

8 Weeks

Chassis Mount

Chassis Mount

SOT-227-4, miniBLOC

-55°C~150°C TJ

XPT™, GenX3™

2013

Active

1 (Unlimited)

Insulated Gate BIP Transistors

500W

1

Single

500W

Standard

1.8V

170A

50μA

600V

4.86nF

1.8V @ 15V, 70A

PT

No

20V

4.86nF @ 25V

ROHS3 Compliant

Lead Free

SILICON

4

AVALANCHE RATED, UL RECOGNIZED

UPPER

UNSPECIFIED

IXX*N60

4

R-PUFM-X4

ISOLATED

POWER CONTROL

N-CHANNEL

92 ns

350 ns

5.5 V

-

-

-

-

IXXN200N60C3H1 vs IXXN100N60B3H1
IXXN110N65B4H1

IXYS

18 Weeks

Chassis Mount

Chassis Mount

SOT-227-4, miniBLOC

-55°C~175°C TJ

XPT™, GenX4™

2013

Active

1 (Unlimited)

Insulated Gate BIP Transistors

750W

1

Single

750W

Standard

2.1V

215A

50μA

650V

3.65nF

2.1V @ 15V, 110A

PT

No

20V

3.65nF @ 25V

ROHS3 Compliant

-

-

-

-

-

-

110N65

-

-

-

-

-

-

-

-

30.000004g

2.1V

-

-

IXXN200N60C3H1 vs IXXN110N65B4H1
IXXN110N65C4H1

IXYS

18 Weeks

Chassis Mount

Chassis Mount

SOT-227-4, miniBLOC

-55°C~175°C TJ

XPT™, GenX4™

2014

Active

1 (Unlimited)

Insulated Gate BIP Transistors

750W

1

Single

750W

Standard

2.35V

210A

50μA

650V

3.69nF

2.35V @ 15V, 110A

PT

No

20V

3.69nF @ 25V

ROHS3 Compliant

Lead Free

-

-

-

-

-

110N65

-

-

-

-

-

-

-

-

38.000013g

1.98V

35 ns

143 ns

IXXN200N60C3H1 vs IXXN110N65C4H1