IXYS IXXN110N65C4H1
- Part Number:
- IXXN110N65C4H1
- Manufacturer:
- IXYS
- Ventron No:
- 2493260-IXXN110N65C4H1
- Description:
- IGBT 650V 210A 750W SOT227B
- Datasheet:
- IXXN110N65C4H1
IXYS IXXN110N65C4H1 technical specifications, attributes, parameters and parts with similar specifications to IXYS IXXN110N65C4H1.
- Factory Lead Time18 Weeks
- MountChassis Mount
- Mounting TypeChassis Mount
- Package / CaseSOT-227-4, miniBLOC
- Weight38.000013g
- Operating Temperature-55°C~175°C TJ
- SeriesXPT™, GenX4™
- Published2014
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- SubcategoryInsulated Gate BIP Transistors
- Max Power Dissipation750W
- Base Part Number110N65
- Number of Elements1
- ConfigurationSingle
- Turn On Delay Time35 ns
- Power - Max750W
- InputStandard
- Turn-Off Delay Time143 ns
- Collector Emitter Voltage (VCEO)2.35V
- Max Collector Current210A
- Current - Collector Cutoff (Max)50μA
- Collector Emitter Breakdown Voltage650V
- Collector Emitter Saturation Voltage1.98V
- Input Capacitance3.69nF
- Vce(on) (Max) @ Vge, Ic2.35V @ 15V, 110A
- IGBT TypePT
- NTC ThermistorNo
- Gate-Emitter Voltage-Max20V
- Input Capacitance (Cies) @ Vce3.69nF @ 25V
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
IXXN110N65C4H1 Overview
This product is manufactured by IXYS and belongs to the category of Transistors - IGBTs - Modules. The images we provide are for reference only, for detailed product information please see specification sheet IXXN110N65C4H1 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of IXXN110N65C4H1. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by IXYS and belongs to the category of Transistors - IGBTs - Modules. The images we provide are for reference only, for detailed product information please see specification sheet IXXN110N65C4H1 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of IXXN110N65C4H1. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
IXXN110N65C4H1 More Descriptions
GenX4 XPT 640 V 210 A Extreme Light Punch Through IGBT - SOT227B
Insulated Gate Bipolar Transistor, 210A I(C), 650V V(BR)CES, N-Channel
Trans IGBT Chip N-CH 650V 200A 750000mW 4-Pin SOT-227B
IGBT Modules 650V/234A Trench IGBT GenX4 XPT
IGBT MOD 650V 210A 750W SOT227B
Insulated Gate Bipolar Transistor, 210A I(C), 650V V(BR)CES, N-Channel
Trans IGBT Chip N-CH 650V 200A 750000mW 4-Pin SOT-227B
IGBT Modules 650V/234A Trench IGBT GenX4 XPT
IGBT MOD 650V 210A 750W SOT227B
The three parts on the right have similar specifications to IXXN110N65C4H1.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseWeightOperating TemperatureSeriesPublishedPart StatusMoisture Sensitivity Level (MSL)SubcategoryMax Power DissipationBase Part NumberNumber of ElementsConfigurationTurn On Delay TimePower - MaxInputTurn-Off Delay TimeCollector Emitter Voltage (VCEO)Max Collector CurrentCurrent - Collector Cutoff (Max)Collector Emitter Breakdown VoltageCollector Emitter Saturation VoltageInput CapacitanceVce(on) (Max) @ Vge, IcIGBT TypeNTC ThermistorGate-Emitter Voltage-MaxInput Capacitance (Cies) @ VceRoHS StatusLead FreeTransistor Element MaterialNumber of TerminationsAdditional FeatureTerminal PositionTerminal FormPin CountJESD-30 CodeCase ConnectionTransistor ApplicationPolarity/Channel TypeTurn On TimeTurn Off Time-Nom (toff)VCEsat-MaxView Compare
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IXXN110N65C4H118 WeeksChassis MountChassis MountSOT-227-4, miniBLOC38.000013g-55°C~175°C TJXPT™, GenX4™2014Active1 (Unlimited)Insulated Gate BIP Transistors750W110N651Single35 ns750WStandard143 ns2.35V210A50μA650V1.98V3.69nF2.35V @ 15V, 110APTNo20V3.69nF @ 25VROHS3 CompliantLead Free--------------
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8 WeeksChassis MountChassis MountSOT-227-4, miniBLOC--55°C~150°C TJXPT™, GenX3™2013Active1 (Unlimited)-780W--Single-780WStandard-1.7V200A50μA600V-9.97nF1.7V @ 15V, 100APTNo-9.97nF @ 25VROHS3 Compliant--------------
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8 WeeksChassis MountChassis MountSOT-227-4, miniBLOC--55°C~150°C TJXPT™, GenX3™2013Active1 (Unlimited)Insulated Gate BIP Transistors500WIXX*N601Single-500WStandard-1.8V170A50μA600V-4.86nF1.8V @ 15V, 70APTNo20V4.86nF @ 25VROHS3 CompliantLead FreeSILICON4AVALANCHE RATED, UL RECOGNIZEDUPPERUNSPECIFIED4R-PUFM-X4ISOLATEDPOWER CONTROLN-CHANNEL92 ns350 ns5.5 V
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18 WeeksChassis MountChassis MountSOT-227-4, miniBLOC30.000004g-55°C~175°C TJXPT™, GenX4™2013Active1 (Unlimited)Insulated Gate BIP Transistors750W110N651Single-750WStandard-2.1V215A50μA650V2.1V3.65nF2.1V @ 15V, 110APTNo20V3.65nF @ 25VROHS3 Compliant--------------
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