IXXN110N65C4H1

IXYS IXXN110N65C4H1

Part Number:
IXXN110N65C4H1
Manufacturer:
IXYS
Ventron No:
2493260-IXXN110N65C4H1
Description:
IGBT 650V 210A 750W SOT227B
ECAD Model:
Datasheet:
IXXN110N65C4H1

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Specifications
IXYS IXXN110N65C4H1 technical specifications, attributes, parameters and parts with similar specifications to IXYS IXXN110N65C4H1.
  • Factory Lead Time
    18 Weeks
  • Mount
    Chassis Mount
  • Mounting Type
    Chassis Mount
  • Package / Case
    SOT-227-4, miniBLOC
  • Weight
    38.000013g
  • Operating Temperature
    -55°C~175°C TJ
  • Series
    XPT™, GenX4™
  • Published
    2014
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Subcategory
    Insulated Gate BIP Transistors
  • Max Power Dissipation
    750W
  • Base Part Number
    110N65
  • Number of Elements
    1
  • Configuration
    Single
  • Turn On Delay Time
    35 ns
  • Power - Max
    750W
  • Input
    Standard
  • Turn-Off Delay Time
    143 ns
  • Collector Emitter Voltage (VCEO)
    2.35V
  • Max Collector Current
    210A
  • Current - Collector Cutoff (Max)
    50μA
  • Collector Emitter Breakdown Voltage
    650V
  • Collector Emitter Saturation Voltage
    1.98V
  • Input Capacitance
    3.69nF
  • Vce(on) (Max) @ Vge, Ic
    2.35V @ 15V, 110A
  • IGBT Type
    PT
  • NTC Thermistor
    No
  • Gate-Emitter Voltage-Max
    20V
  • Input Capacitance (Cies) @ Vce
    3.69nF @ 25V
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
IXXN110N65C4H1 Overview
This product is manufactured by IXYS and belongs to the category of Transistors - IGBTs - Modules. The images we provide are for reference only, for detailed product information please see specification sheet IXXN110N65C4H1 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of IXXN110N65C4H1. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
IXXN110N65C4H1 More Descriptions
GenX4™ XPT™ 640 V 210 A Extreme Light Punch Through IGBT - SOT227B
Insulated Gate Bipolar Transistor, 210A I(C), 650V V(BR)CES, N-Channel
Trans IGBT Chip N-CH 650V 200A 750000mW 4-Pin SOT-227B
IGBT Modules 650V/234A Trench IGBT GenX4 XPT
IGBT MOD 650V 210A 750W SOT227B
Product Comparison
The three parts on the right have similar specifications to IXXN110N65C4H1.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Weight
    Operating Temperature
    Series
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Subcategory
    Max Power Dissipation
    Base Part Number
    Number of Elements
    Configuration
    Turn On Delay Time
    Power - Max
    Input
    Turn-Off Delay Time
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    Current - Collector Cutoff (Max)
    Collector Emitter Breakdown Voltage
    Collector Emitter Saturation Voltage
    Input Capacitance
    Vce(on) (Max) @ Vge, Ic
    IGBT Type
    NTC Thermistor
    Gate-Emitter Voltage-Max
    Input Capacitance (Cies) @ Vce
    RoHS Status
    Lead Free
    Transistor Element Material
    Number of Terminations
    Additional Feature
    Terminal Position
    Terminal Form
    Pin Count
    JESD-30 Code
    Case Connection
    Transistor Application
    Polarity/Channel Type
    Turn On Time
    Turn Off Time-Nom (toff)
    VCEsat-Max
    View Compare
  • IXXN110N65C4H1
    IXXN110N65C4H1
    18 Weeks
    Chassis Mount
    Chassis Mount
    SOT-227-4, miniBLOC
    38.000013g
    -55°C~175°C TJ
    XPT™, GenX4™
    2014
    Active
    1 (Unlimited)
    Insulated Gate BIP Transistors
    750W
    110N65
    1
    Single
    35 ns
    750W
    Standard
    143 ns
    2.35V
    210A
    50μA
    650V
    1.98V
    3.69nF
    2.35V @ 15V, 110A
    PT
    No
    20V
    3.69nF @ 25V
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IXXN200N60B3H1
    8 Weeks
    Chassis Mount
    Chassis Mount
    SOT-227-4, miniBLOC
    -
    -55°C~150°C TJ
    XPT™, GenX3™
    2013
    Active
    1 (Unlimited)
    -
    780W
    -
    -
    Single
    -
    780W
    Standard
    -
    1.7V
    200A
    50μA
    600V
    -
    9.97nF
    1.7V @ 15V, 100A
    PT
    No
    -
    9.97nF @ 25V
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IXXN100N60B3H1
    8 Weeks
    Chassis Mount
    Chassis Mount
    SOT-227-4, miniBLOC
    -
    -55°C~150°C TJ
    XPT™, GenX3™
    2013
    Active
    1 (Unlimited)
    Insulated Gate BIP Transistors
    500W
    IXX*N60
    1
    Single
    -
    500W
    Standard
    -
    1.8V
    170A
    50μA
    600V
    -
    4.86nF
    1.8V @ 15V, 70A
    PT
    No
    20V
    4.86nF @ 25V
    ROHS3 Compliant
    Lead Free
    SILICON
    4
    AVALANCHE RATED, UL RECOGNIZED
    UPPER
    UNSPECIFIED
    4
    R-PUFM-X4
    ISOLATED
    POWER CONTROL
    N-CHANNEL
    92 ns
    350 ns
    5.5 V
  • IXXN110N65B4H1
    18 Weeks
    Chassis Mount
    Chassis Mount
    SOT-227-4, miniBLOC
    30.000004g
    -55°C~175°C TJ
    XPT™, GenX4™
    2013
    Active
    1 (Unlimited)
    Insulated Gate BIP Transistors
    750W
    110N65
    1
    Single
    -
    750W
    Standard
    -
    2.1V
    215A
    50μA
    650V
    2.1V
    3.65nF
    2.1V @ 15V, 110A
    PT
    No
    20V
    3.65nF @ 25V
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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