ISSI, Integrated Silicon Solution Inc IS64WV51216BLL-10MLA3
- Part Number:
- IS64WV51216BLL-10MLA3
- Manufacturer:
- ISSI, Integrated Silicon Solution Inc
- Ventron No:
- 3836271-IS64WV51216BLL-10MLA3
- Description:
- IC SRAM 8MBIT 10NS 48MINIBGA
- Datasheet:
- IS64WV51216BLL-10MLA3
ISSI, Integrated Silicon Solution Inc IS64WV51216BLL-10MLA3 technical specifications, attributes, parameters and parts with similar specifications to ISSI, Integrated Silicon Solution Inc IS64WV51216BLL-10MLA3.
- Factory Lead Time10 Weeks
- Mounting TypeSurface Mount
- Package / Case48-TFBGA
- Surface MountYES
- Number of Pins48
- Operating Temperature-40°C~125°C TA
- PackagingTray
- JESD-609 Codee1
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Number of Terminations48
- Terminal FinishTin/Silver/Copper (Sn/Ag/Cu)
- TechnologySRAM - Asynchronous
- Voltage - Supply2.4V~3.6V
- Terminal PositionBOTTOM
- Peak Reflow Temperature (Cel)260
- Number of Functions1
- Supply Voltage3.3V
- Terminal Pitch0.75mm
- Time@Peak Reflow Temperature-Max (s)40
- Pin Count48
- Supply Voltage-Max (Vsup)3.6V
- Power Supplies2.5/3.3V
- Supply Voltage-Min (Vsup)2.4V
- Memory Size8Mb 512K x 16
- Number of Ports1
- Nominal Supply Current140mA
- Memory TypeVolatile
- Memory FormatSRAM
- Memory InterfaceParallel
- Output Characteristics3-STATE
- Memory Width16
- Write Cycle Time - Word, Page10ns
- Address Bus Width19b
- Density8 Mb
- Standby Current-Max0.05A
- I/O TypeCOMMON
- Sync/AsyncAsynchronous
- Word Size16b
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
IS64WV51216BLL-10MLA3 Overview
The package or case for this particular electronic component is a 48-TFBGA, which stands for Thin Fine Pitch Ball Grid Array. This package is commonly used for integrated circuits and is known for its compact size and high density. The supply voltage required for this component is 3.3V, which is a standard voltage for many electronic devices. When it comes to reflow temperature, this component has a maximum time of 40 seconds at peak temperature. With a pin count of 48, this component has a relatively high number of pins, allowing for more connections and functionality. The memory size for this component is 8Mb, specifically 512K x 16, which refers to the number of bits and the organization of the memory cells. The memory format for this component is SRAM, which stands for Static Random Access Memory, and the memory interface is parallel, meaning data is transmitted simultaneously through multiple lines. It can operate in both synchronous and asynchronous modes, with a word size of 16 bits. However, this component is not radiation hardened, meaning it is not designed to withstand high levels of radiation.
IS64WV51216BLL-10MLA3 Features
Package / Case: 48-TFBGA
48 Pins
I/O Type: COMMON
IS64WV51216BLL-10MLA3 Applications
There are a lot of ISSI, Integrated Silicon Solution Inc
IS64WV51216BLL-10MLA3 Memory applications.
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
embedded logic
eDRAM
The package or case for this particular electronic component is a 48-TFBGA, which stands for Thin Fine Pitch Ball Grid Array. This package is commonly used for integrated circuits and is known for its compact size and high density. The supply voltage required for this component is 3.3V, which is a standard voltage for many electronic devices. When it comes to reflow temperature, this component has a maximum time of 40 seconds at peak temperature. With a pin count of 48, this component has a relatively high number of pins, allowing for more connections and functionality. The memory size for this component is 8Mb, specifically 512K x 16, which refers to the number of bits and the organization of the memory cells. The memory format for this component is SRAM, which stands for Static Random Access Memory, and the memory interface is parallel, meaning data is transmitted simultaneously through multiple lines. It can operate in both synchronous and asynchronous modes, with a word size of 16 bits. However, this component is not radiation hardened, meaning it is not designed to withstand high levels of radiation.
IS64WV51216BLL-10MLA3 Features
Package / Case: 48-TFBGA
48 Pins
I/O Type: COMMON
IS64WV51216BLL-10MLA3 Applications
There are a lot of ISSI, Integrated Silicon Solution Inc
IS64WV51216BLL-10MLA3 Memory applications.
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
embedded logic
eDRAM
IS64WV51216BLL-10MLA3 More Descriptions
SRAM Chip Async Single 2.5V/3.3V 8M-bit 512K x 16 10ns Automotive 48-Pin Mini-BGA
e1 Surface Mount Tray SRAM - Asynchronous ic memory 10ns 0.75mm 140mA 8Mb
IC SRAM 8MBIT PARALLEL 48MINIBGA
8Mb,high-Speed/Low Power,async,512K X 16,10Ns,2.4V-3.6V,48 Ball Mbga (9X11 Mm), Rohs, Automotive Temp |Integrated Silicon Solution (Issi) IS64WV51216BLL-10MLA3
e1 Surface Mount Tray SRAM - Asynchronous ic memory 10ns 0.75mm 140mA 8Mb
IC SRAM 8MBIT PARALLEL 48MINIBGA
8Mb,high-Speed/Low Power,async,512K X 16,10Ns,2.4V-3.6V,48 Ball Mbga (9X11 Mm), Rohs, Automotive Temp |Integrated Silicon Solution (Issi) IS64WV51216BLL-10MLA3
The three parts on the right have similar specifications to IS64WV51216BLL-10MLA3.
-
ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseSurface MountNumber of PinsOperating TemperaturePackagingJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminal FinishTechnologyVoltage - SupplyTerminal PositionPeak Reflow Temperature (Cel)Number of FunctionsSupply VoltageTerminal PitchTime@Peak Reflow Temperature-Max (s)Pin CountSupply Voltage-Max (Vsup)Power SuppliesSupply Voltage-Min (Vsup)Memory SizeNumber of PortsNominal Supply CurrentMemory TypeMemory FormatMemory InterfaceOutput CharacteristicsMemory WidthWrite Cycle Time - Word, PageAddress Bus WidthDensityStandby Current-MaxI/O TypeSync/AsyncWord SizeRadiation HardeningRoHS StatusJESD-30 CodeQualification StatusSupply Current-MaxOrganizationMemory DensityScreening LevelAccess Time (Max)Standby Voltage-MinLengthHeight Seated (Max)WidthECCN CodeAdditional FeatureHTS CodeView Compare
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IS64WV51216BLL-10MLA310 WeeksSurface Mount48-TFBGAYES48-40°C~125°C TATraye1yesActive3 (168 Hours)48Tin/Silver/Copper (Sn/Ag/Cu)SRAM - Asynchronous2.4V~3.6VBOTTOM26013.3V0.75mm40483.6V2.5/3.3V2.4V8Mb 512K x 161140mAVolatileSRAMParallel3-STATE1610ns19b8 Mb0.05ACOMMONAsynchronous16bNoROHS3 Compliant---------------
-
10 WeeksSurface Mount48-TFBGAYES--40°C~125°C TATray--Active3 (168 Hours)48-SRAM - Asynchronous2.4V~3.6VBOTTOM-13V0.75mm--3.6V2.5/3.3V2.4V8Mb 1M x 8--VolatileSRAMParallel3-STATE810ns--0.035ACOMMON---ROHS3 CompliantR-PBGA-B48Not Qualified0.065mA1MX88388608 bitAEC-Q10010 ns2V8mm1.2mm6mm---
-
10 WeeksSurface Mount48-TFBGAYES--40°C~125°C TATape & Reel (TR)--Active3 (168 Hours)48-SRAM - Asynchronous2.4V~3.6VBOTTOMNOT SPECIFIED13V0.75mmNOT SPECIFIED-3.6V-2.4V8Mb 1M x 8--VolatileSRAMParallel-810ns-------ROHS3 CompliantR-PBGA-B48--1MX88388608 bit-10 ns-8mm1.2mm6mm---
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10 WeeksSurface Mount44-TSOP (0.400, 10.16mm Width)YES44-40°C~125°C TATraye3-Active3 (168 Hours)44TINSRAM - Asynchronous2.4V~3.6VDUAL26013.3V0.8mm10443.6V2.5/3.3V2.4V2Mb 256K x 8--VolatileSRAMParallel3-STATE810ns--0.015ACOMMON---ROHS3 Compliant-Not Qualified0.05mA256KX82097152 bitAEC-Q10010 ns2V18.41mm1.2mm10.16mm3A991.B.2.APIPELINED ARCHITECTURE8542.32.00.41
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