ISSI, Integrated Silicon Solution Inc IS64LV25616AL-12BLA3
- Part Number:
- IS64LV25616AL-12BLA3
- Manufacturer:
- ISSI, Integrated Silicon Solution Inc
- Ventron No:
- 3235196-IS64LV25616AL-12BLA3
- Description:
- IC SRAM 4MBIT 12NS 48MINIBGA
- Datasheet:
- IS64LV25616AL
ISSI, Integrated Silicon Solution Inc IS64LV25616AL-12BLA3 technical specifications, attributes, parameters and parts with similar specifications to ISSI, Integrated Silicon Solution Inc IS64LV25616AL-12BLA3.
- Factory Lead Time12 Weeks
- Mounting TypeSurface Mount
- Package / Case48-TFBGA
- Surface MountYES
- Operating Temperature-40°C~125°C TA
- PackagingTray
- JESD-609 Codee1
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)2 (1 Year)
- Number of Terminations48
- ECCN Code3A991.B.2.A
- Terminal FinishTin/Silver/Copper (Sn/Ag/Cu)
- HTS Code8542.32.00.41
- TechnologySRAM - Asynchronous
- Voltage - Supply3.135V~3.6V
- Terminal PositionBOTTOM
- Peak Reflow Temperature (Cel)260
- Number of Functions1
- Supply Voltage3.3V
- Terminal Pitch0.75mm
- Time@Peak Reflow Temperature-Max (s)40
- Pin Count48
- JESD-30 CodeR-PBGA-B48
- Qualification StatusNot Qualified
- Supply Voltage-Max (Vsup)3.63V
- Power Supplies3.3V
- Supply Voltage-Min (Vsup)3.135V
- Memory Size4Mb 256K x 16
- Memory TypeVolatile
- Supply Current-Max0.12mA
- Memory FormatSRAM
- Memory InterfaceParallel
- Organization256KX16
- Output Characteristics3-STATE
- Memory Width16
- Write Cycle Time - Word, Page12ns
- Standby Current-Max0.02A
- Memory Density4194304 bit
- Screening LevelAEC-Q100
- Access Time (Max)12 ns
- I/O TypeCOMMON
- Standby Voltage-Min2V
- Height Seated (Max)1.2mm
- Length10mm
- Width8mm
- RoHS StatusNon-RoHS Compliant
IS64LV25616AL-12BLA3 Overview
The Moisture Sensitivity Level (MSL) for this product is 2, meaning it can be stored for up to 1 year before being used. The ECCN Code is 3A991.B.2.A, indicating that it is a controlled item for export. The Terminal Finish is Tin/Silver/Copper (Sn/Ag/Cu), and the Terminal Position is BOTTOM. The Peak Reflow Temperature is 260 degrees Celsius. The Supply Voltage-Min is 3.135V. This product is a Volatile memory type with a Parallel interface. The Write Cycle Time for both Word and Page is 12ns. It is also noted that this product is Non-RoHS Compliant.
IS64LV25616AL-12BLA3 Features
Package / Case: 48-TFBGA
I/O Type: COMMON
IS64LV25616AL-12BLA3 Applications
There are a lot of ISSI, Integrated Silicon Solution Inc
IS64LV25616AL-12BLA3 Memory applications.
cell phones
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
The Moisture Sensitivity Level (MSL) for this product is 2, meaning it can be stored for up to 1 year before being used. The ECCN Code is 3A991.B.2.A, indicating that it is a controlled item for export. The Terminal Finish is Tin/Silver/Copper (Sn/Ag/Cu), and the Terminal Position is BOTTOM. The Peak Reflow Temperature is 260 degrees Celsius. The Supply Voltage-Min is 3.135V. This product is a Volatile memory type with a Parallel interface. The Write Cycle Time for both Word and Page is 12ns. It is also noted that this product is Non-RoHS Compliant.
IS64LV25616AL-12BLA3 Features
Package / Case: 48-TFBGA
I/O Type: COMMON
IS64LV25616AL-12BLA3 Applications
There are a lot of ISSI, Integrated Silicon Solution Inc
IS64LV25616AL-12BLA3 Memory applications.
cell phones
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
IS64LV25616AL-12BLA3 More Descriptions
SRAM Chip Async Single 3.3V 4M-Bit 256K x 16 12ns 48-Pin Mini-BGA
3.135V~3.6V 4Mbit MBGA-48(8x10) SRAM ROHS
IC SRAM 4MBIT PARALLEL 48MINIBGA
4Mb,high-Speed/Low Power,async,256K X 16,10Ns,3.3V,48 Ball Mbga (8X10 Mm), Rohs, Automotive Temp |Integrated Silicon Solution (Issi) IS64LV25616AL-12BLA3
3.135V~3.6V 4Mbit MBGA-48(8x10) SRAM ROHS
IC SRAM 4MBIT PARALLEL 48MINIBGA
4Mb,high-Speed/Low Power,async,256K X 16,10Ns,3.3V,48 Ball Mbga (8X10 Mm), Rohs, Automotive Temp |Integrated Silicon Solution (Issi) IS64LV25616AL-12BLA3
The three parts on the right have similar specifications to IS64LV25616AL-12BLA3.
-
ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseSurface MountOperating TemperaturePackagingJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishHTS CodeTechnologyVoltage - SupplyTerminal PositionPeak Reflow Temperature (Cel)Number of FunctionsSupply VoltageTerminal PitchTime@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusSupply Voltage-Max (Vsup)Power SuppliesSupply Voltage-Min (Vsup)Memory SizeMemory TypeSupply Current-MaxMemory FormatMemory InterfaceOrganizationOutput CharacteristicsMemory WidthWrite Cycle Time - Word, PageStandby Current-MaxMemory DensityScreening LevelAccess Time (Max)I/O TypeStandby Voltage-MinHeight Seated (Max)LengthWidthRoHS StatusNumber of PinsAdditional FeatureClock FrequencyAccess TimeView Compare
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IS64LV25616AL-12BLA312 WeeksSurface Mount48-TFBGAYES-40°C~125°C TATraye1yesActive2 (1 Year)483A991.B.2.ATin/Silver/Copper (Sn/Ag/Cu)8542.32.00.41SRAM - Asynchronous3.135V~3.6VBOTTOM26013.3V0.75mm4048R-PBGA-B48Not Qualified3.63V3.3V3.135V4Mb 256K x 16Volatile0.12mASRAMParallel256KX163-STATE1612ns0.02A4194304 bitAEC-Q10012 nsCOMMON2V1.2mm10mm8mmNon-RoHS Compliant-----
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10 WeeksSurface Mount48-TFBGAYES-40°C~125°C TATape & Reel (TR)--Active3 (168 Hours)48---SRAM - Asynchronous2.4V~3.6VBOTTOMNOT SPECIFIED13V0.75mmNOT SPECIFIED-R-PBGA-B48-3.6V-2.4V8Mb 1M x 8Volatile-SRAMParallel1MX8-810ns-8388608 bit-10 ns--1.2mm8mm6mmROHS3 Compliant----
-
12 WeeksSurface Mount100-LQFPYES-40°C~125°C TATape & Reel (TR)-yesActive3 (168 Hours)100---SRAM - Synchronous, SDR3.135V~3.465VQUADNOT SPECIFIED13.3V0.65mmNOT SPECIFIED---3.465V-3.135V4Mb 128K x 32Volatile-SRAMParallel128KX32-32--4194304 bit----1.6mm20mm14mmROHS3 Compliant100PIPELINED ARCHITECTURE200MHz3.1ns
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10 WeeksSurface Mount36-TFBGAYES-40°C~125°C TATape & Reel (TR)e3yesActive3 (168 Hours)36-MATTE TIN-SRAM - Asynchronous2.4V~3.6VBOTTOM22513V0.75mmNOT SPECIFIED--Not Qualified3.6V2.5/3.3V2.4V4Mb 512K x 8Volatile0.065mASRAMParallel512KX83-STATE810ns0.015A4194304 bitAEC-Q10010 nsCOMMON2V1.2mm8mm6mmROHS3 Compliant36---
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