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ISSI, Integrated Silicon Solution Inc IS61NLP25636A-200TQI-TR
- Part Number:
- IS61NLP25636A-200TQI-TR
- Manufacturer:
- ISSI, Integrated Silicon Solution Inc
- Ventron No:
- 3235742-IS61NLP25636A-200TQI-TR
- Description:
- IC SRAM 9MBIT 200MHZ 100TQFP
- ECAD Model:
-
- Datasheet:
- IS61N(LP,VP)yyyyyA
ISSI, Integrated Silicon Solution Inc IS61NLP25636A-200TQI-TR technical specifications, attributes, parameters and parts with similar specifications to ISSI, Integrated Silicon Solution Inc IS61NLP25636A-200TQI-TR.
- Mounting TypeSurface Mount
- Package / Case100-LQFP
- Surface MountYES
- Number of Pins100
- Operating Temperature-40°C~85°C TA
- PackagingTape & Reel (TR)
- Part StatusNot For New Designs
- Moisture Sensitivity Level (MSL)2 (1 Year)
- Number of Terminations100
- TechnologySRAM - Synchronous, SDR
- Voltage - Supply3.135V~3.465V
- Terminal PositionQUAD
- Terminal Pitch0.635mm
- Qualification StatusNot Qualified
- Power Supplies2.5/3.33.3V
- Memory Size9Mb 256K x 36
- Memory TypeVolatile
- Clock Frequency200MHz
- Supply Current-Max0.28mA
- Access Time3.1ns
- Memory FormatSRAM
- Memory InterfaceParallel
- Organization256KX36
- Output Characteristics3-STATE
- Memory Width36
- Standby Current-Max0.05A
- Memory Density9437184 bit
- I/O TypeCOMMON
- Standby Voltage-Min3.14V
- RoHS StatusNon-RoHS Compliant
IS61NLP25636A-200TQI-TR Overview
The SRAM - Synchronous, SDR technology is a high-speed, low-power solution for memory storage. With a memory width of 36 and a memory density of 9437184 bits, this device has the capability to store a large amount of data. It requires a voltage supply of 3.135V~3.465V and has a maximum supply current of 0.28mA, making it energy-efficient. The output characteristics are 3-STATE, providing flexibility in data transfer. The device is equipped with 100 pins and 100 terminations, allowing for easy integration into various systems. Despite its impressive features, it is important to note that this device is not RoHS compliant, with a minimum standby voltage of 3.14V. Overall, the combination of these specifications makes this SRAM a powerful and reliable option for memory storage.
IS61NLP25636A-200TQI-TR Features
Package / Case: 100-LQFP
100 Pins
I/O Type: COMMON
IS61NLP25636A-200TQI-TR Applications
There are a lot of ISSI, Integrated Silicon Solution Inc
IS61NLP25636A-200TQI-TR Memory applications.
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
The SRAM - Synchronous, SDR technology is a high-speed, low-power solution for memory storage. With a memory width of 36 and a memory density of 9437184 bits, this device has the capability to store a large amount of data. It requires a voltage supply of 3.135V~3.465V and has a maximum supply current of 0.28mA, making it energy-efficient. The output characteristics are 3-STATE, providing flexibility in data transfer. The device is equipped with 100 pins and 100 terminations, allowing for easy integration into various systems. Despite its impressive features, it is important to note that this device is not RoHS compliant, with a minimum standby voltage of 3.14V. Overall, the combination of these specifications makes this SRAM a powerful and reliable option for memory storage.
IS61NLP25636A-200TQI-TR Features
Package / Case: 100-LQFP
100 Pins
I/O Type: COMMON
IS61NLP25636A-200TQI-TR Applications
There are a lot of ISSI, Integrated Silicon Solution Inc
IS61NLP25636A-200TQI-TR Memory applications.
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
IS61NLP25636A-200TQI-TR More Descriptions
SRAM Chip Sync Quad 3.3V 9M-Bit 256K x 36 3.1ns 100-Pin TQFP T/R
IC SRAM 9MBIT PARALLEL 100TQFP
SRAM 8Mb 256Kx36 200Mhz Sync SRAM 3.3v
IC SRAM 9MBIT PARALLEL 100TQFP
SRAM 8Mb 256Kx36 200Mhz Sync SRAM 3.3v
The three parts on the right have similar specifications to IS61NLP25636A-200TQI-TR.
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ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountNumber of PinsOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTechnologyVoltage - SupplyTerminal PositionTerminal PitchQualification StatusPower SuppliesMemory SizeMemory TypeClock FrequencySupply Current-MaxAccess TimeMemory FormatMemory InterfaceOrganizationOutput CharacteristicsMemory WidthStandby Current-MaxMemory DensityI/O TypeStandby Voltage-MinRoHS StatusFactory Lead TimeECCN CodeAdditional FeatureHTS CodePeak Reflow Temperature (Cel)Number of FunctionsSupply VoltageTime@Peak Reflow Temperature-Max (s)Pin CountSupply Voltage-Max (Vsup)Supply Voltage-Min (Vsup)Access Time (Max)LengthHeight Seated (Max)WidthReach Compliance CodeJESD-30 CodeView Compare
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IS61NLP25636A-200TQI-TRSurface Mount100-LQFPYES100-40°C~85°C TATape & Reel (TR)Not For New Designs2 (1 Year)100SRAM - Synchronous, SDR3.135V~3.465VQUAD0.635mmNot Qualified2.5/3.33.3V9Mb 256K x 36Volatile200MHz0.28mA3.1nsSRAMParallel256KX363-STATE360.05A9437184 bitCOMMON3.14VNon-RoHS Compliant------------------ -
Surface Mount165-LBGAYES1650°C~70°C TATrayActive3 (168 Hours)165SRAM - Synchronous, DDR II1.71V~1.89VBOTTOM1mm--72Mb 4M x 18Volatile250MHz--SRAMParallel4MX18-18-75497472 bit--ROHS3 Compliant12 Weeks3A991.B.2.APIPELINED ARCHITECTURE8542.32.00.41NOT SPECIFIED11.8VNOT SPECIFIED1651.89V1.71V0.45 ns17mm1.4mm15mm--
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Surface Mount165-LBGAYES1650°C~70°C TATrayActive3 (168 Hours)165SRAM - Synchronous, DDR II1.71V~1.89VBOTTOM1mm--72Mb 4M x 18Volatile300MHz--SRAMParallel4MX18-18-75497472 bit--ROHS3 Compliant12 Weeks3A991.B.2.APIPELINED ARCHITECTURE8542.32.00.41NOT SPECIFIED11.8VNOT SPECIFIED1651.89V1.71V0.45 ns17mm1.4mm15mm--
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Surface Mount165-LBGAYES--40°C~85°C TATrayLast Time Buy3 (168 Hours)165SRAM - Synchronous, DDR II1.71V~1.89VBOTTOM1mm--72Mb 4M x 18Volatile300MHz-1.48nsSRAMParallel4MX18-18-75497472 bit----3A991.B.2.APIPELINED ARCHITECTURE8542.32.00.41-11.8V-1651.89V1.71V-17mm1.4mm15mmcompliantR-PBGA-B165
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ISSI, Integrated Silicon Solution Inc
5V V Surface Mount 32 Pin Memory IC 4 Mb kb 20.75mm mm 15mA mA 8b b
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