Infineon Technologies IRS21850SPBF
- Part Number:
- IRS21850SPBF
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 3737229-IRS21850SPBF
- Description:
- IC DVR HIGH SIDE SGL 600V 8-SOIC
- Datasheet:
- IRS21850SPBF
Infineon Technologies IRS21850SPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRS21850SPBF.
- Factory Lead Time17 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Number of Pins8
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- Published1996
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)2 (1 Year)
- Number of Terminations8
- ECCN CodeEAR99
- Max Power Dissipation1.25W
- TechnologyCMOS
- Voltage - Supply10V~20V
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Number of Functions1
- Supply Voltage15V
- Base Part NumberIRS21850SPBF
- Output Voltage60mV
- Max Output Current4A
- Nominal Supply Current150μA
- Power Dissipation1.25W
- Output Current4A
- Propagation Delay210 ns
- Input TypeNon-Inverting
- Turn On Delay Time160 ns
- Rise Time40ns
- Fall Time (Typ)40 ns
- Turn-Off Delay Time160 ns
- Rise / Fall Time (Typ)15ns 15ns
- Interface IC TypeBUFFER OR INVERTER BASED PERIPHERAL DRIVER
- Channel TypeSingle
- Number of Drivers1
- Driven ConfigurationHigh-Side
- Gate TypeIGBT, N-Channel MOSFET
- Current - Peak Output (Source, Sink)4A 4A
- Logic Voltage - VIL, VIH0.8V 2.5V
- Built-in ProtectionsTRANSIENT; UNDER VOLTAGE
- High Side Voltage - Max (Bootstrap)600V
- Height1.5mm
- Length5mm
- Width4mm
- Radiation HardeningNo
- REACH SVHCNo SVHC
- RoHS StatusRoHS Compliant
- Lead FreeLead Free
IRS21850SPBF Overview
For greater flexibility, its 8-SOIC (0.154, 3.90mm Width) package is used.Gate drivers is packaged in the way of Tube.A total of 1 drivers are integrated into its configuration.It's mounted on the way to Surface Mount.When the supply voltage is 10V~20V it is able to demonstrate its superiority.Gate type IGBT, N-Channel MOSFET is designed for it.This device allows temperatures in the range of -55°C~150°C TJ.The input type for this program is Non-Inverting.As a result of its configuration, it contains a maximum of 8 terminations.There are numerous related parts listed under its base part number IRS21850SPBF.The device is mounted using Surface Mount.As a result, it is configured with 8 pins when it is designed.Mosfet driver is specifically designed to opeate wMosfet driverh a supply voltage of 15V.Mosfet driver employs an interface chip called BUFFER OR INVERTER BASED PERIPHERAL DRIVER as Mosfet drivers interface chip.There is a maximum output current of 4A.Ideally, the high-side voltage should not exceed 600V.An output current of 4A is supported.Considering its maximum power dissipation, 1.25W shows its maximum capacity to transfer and conduct power loss without overheating.Mosfet gate drivers outputs 60mV as voltage.
IRS21850SPBF Features
Embedded in the Tube package
1 drivers
Employing a gate type of IGBT, N-Channel MOSFET
8 pins
High-side voltage - Max (Bootstrap) of 600V
Maximum power dissipation of 1.25W
IRS21850SPBF Applications
There are a lot of Infineon Technologies IRS21850SPBF gate drivers applications.
DC-DC Converters
AC-DC Inverters
Telecom switch mode power supplies
Portable Media Players
High-speed communications
Power factor correction (PFC) circuits
Active Clamp Flyback or Forward and Synchronous Rectifier
Isolated Gate Driver Supplies
White Goods - Air Conditioner, Washing Machine,
Dual-Battery Systems
For greater flexibility, its 8-SOIC (0.154, 3.90mm Width) package is used.Gate drivers is packaged in the way of Tube.A total of 1 drivers are integrated into its configuration.It's mounted on the way to Surface Mount.When the supply voltage is 10V~20V it is able to demonstrate its superiority.Gate type IGBT, N-Channel MOSFET is designed for it.This device allows temperatures in the range of -55°C~150°C TJ.The input type for this program is Non-Inverting.As a result of its configuration, it contains a maximum of 8 terminations.There are numerous related parts listed under its base part number IRS21850SPBF.The device is mounted using Surface Mount.As a result, it is configured with 8 pins when it is designed.Mosfet driver is specifically designed to opeate wMosfet driverh a supply voltage of 15V.Mosfet driver employs an interface chip called BUFFER OR INVERTER BASED PERIPHERAL DRIVER as Mosfet drivers interface chip.There is a maximum output current of 4A.Ideally, the high-side voltage should not exceed 600V.An output current of 4A is supported.Considering its maximum power dissipation, 1.25W shows its maximum capacity to transfer and conduct power loss without overheating.Mosfet gate drivers outputs 60mV as voltage.
IRS21850SPBF Features
Embedded in the Tube package
1 drivers
Employing a gate type of IGBT, N-Channel MOSFET
8 pins
High-side voltage - Max (Bootstrap) of 600V
Maximum power dissipation of 1.25W
IRS21850SPBF Applications
There are a lot of Infineon Technologies IRS21850SPBF gate drivers applications.
DC-DC Converters
AC-DC Inverters
Telecom switch mode power supplies
Portable Media Players
High-speed communications
Power factor correction (PFC) circuits
Active Clamp Flyback or Forward and Synchronous Rectifier
Isolated Gate Driver Supplies
White Goods - Air Conditioner, Washing Machine,
Dual-Battery Systems
IRS21850SPBF More Descriptions
IRS21850SPBF; MOSFET Power Driver; 4A; 10 to 20 V; Non-Inverting; 8-Pin SOIC, SOIC 8N, RoHSInfineon SCT
Tube IRS21850SPBF High-Side 1996 gate driver 40ns -55C~150C TJ 4A 4A 1.25W
Power MOSFET and IGBT Driver, Single Channel/Hi Side, 600V, 8-pin SOIC, Tube
MOSFET Operating temperature: -55... 150 °C Drive: logic level Housing type: SOIC-8 Polarity: N Power dissipation: 1.25 W
GATE DRIVER, HIGH SIDE, 600V, SOIC8; Device Type:IGBT / MOSFET; Module Configuration:High Side; Peak Output Current:4A; Supply Voltage Range:10V to 20V; Driver Case Style:SOIC; No. of Pins:8; Input Delay:160ns; Output Delay:160ns; Operating Temperature Range:-40°C to 125°C; SVHC:No SVHC (18-Jun-2012); Base Number:21850
600 V High Side Driver IC with typical 4 A source and 4 A sink currents in 8 Lead SOIC package for IGBTs and MOSFETs. | Summary of Features: Gate drive supply range from 10 V to 20 V; Undervoltage lockout for for VBS and VCC; 3.3 V and 5 V input logic compatible; Matched propagation delay for all channels; Tolerant to negative transient voltage
Tube IRS21850SPBF High-Side 1996 gate driver 40ns -55C~150C TJ 4A 4A 1.25W
Power MOSFET and IGBT Driver, Single Channel/Hi Side, 600V, 8-pin SOIC, Tube
MOSFET Operating temperature: -55... 150 °C Drive: logic level Housing type: SOIC-8 Polarity: N Power dissipation: 1.25 W
GATE DRIVER, HIGH SIDE, 600V, SOIC8; Device Type:IGBT / MOSFET; Module Configuration:High Side; Peak Output Current:4A; Supply Voltage Range:10V to 20V; Driver Case Style:SOIC; No. of Pins:8; Input Delay:160ns; Output Delay:160ns; Operating Temperature Range:-40°C to 125°C; SVHC:No SVHC (18-Jun-2012); Base Number:21850
600 V High Side Driver IC with typical 4 A source and 4 A sink currents in 8 Lead SOIC package for IGBTs and MOSFETs. | Summary of Features: Gate drive supply range from 10 V to 20 V; Undervoltage lockout for for VBS and VCC; 3.3 V and 5 V input logic compatible; Matched propagation delay for all channels; Tolerant to negative transient voltage
The three parts on the right have similar specifications to IRS21850SPBF.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeMax Power DissipationTechnologyVoltage - SupplyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Number of FunctionsSupply VoltageBase Part NumberOutput VoltageMax Output CurrentNominal Supply CurrentPower DissipationOutput CurrentPropagation DelayInput TypeTurn On Delay TimeRise TimeFall Time (Typ)Turn-Off Delay TimeRise / Fall Time (Typ)Interface IC TypeChannel TypeNumber of DriversDriven ConfigurationGate TypeCurrent - Peak Output (Source, Sink)Logic Voltage - VIL, VIHBuilt-in ProtectionsHigh Side Voltage - Max (Bootstrap)HeightLengthWidthRadiation HardeningREACH SVHCRoHS StatusLead FreeJESD-609 CodeTerminal FinishSubcategoryNumber of OutputsPower SuppliesMax Supply CurrentInput Offset Voltage (Vos)Release TimeSeriesReflow Temperature-Max (s)View Compare
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IRS21850SPBF17 WeeksSurface MountSurface Mount8-SOIC (0.154, 3.90mm Width)8-55°C~150°C TJTube1996Obsolete2 (1 Year)8EAR991.25WCMOS10V~20VDUALGULL WING260115VIRS21850SPBF60mV4A150μA1.25W4A210 nsNon-Inverting160 ns40ns40 ns160 ns15ns 15nsBUFFER OR INVERTER BASED PERIPHERAL DRIVERSingle1High-SideIGBT, N-Channel MOSFET4A 4A0.8V 2.5VTRANSIENT; UNDER VOLTAGE600V1.5mm5mm4mmNoNo SVHCRoHS CompliantLead Free-----------
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12 WeeksSurface MountSurface Mount8-SOIC (0.154, 3.90mm Width)8-40°C~150°C TJTube1996Active2 (1 Year)8EAR99625mWCMOS10V~20VDUALGULL WING-115VIRS2011SPBF220V1A300μA625mW1A80 nsInverting20 ns40ns35 ns20 ns25ns 15nsBUFFER OR INVERTER BASED PERIPHERAL DRIVERIndependent-Half-BridgeN-Channel MOSFET1A 1A0.8V 2.7VTRANSIENT; UNDER VOLTAGE-1.4986mm4.9784mm3.9878mmNoNo SVHCROHS3 CompliantLead Freee3Matte Tin (Sn)MOSFET Drivers215V300μA200V60 ns--
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-Surface MountSurface Mount16-VFQFN Exposed Pad16-40°C~150°C TJTube2010Obsolete2 (1 Year)-EAR992.08W-10V~20V-----IRS2001MPBF15V600mA150μA2.08W600mA220 nsNon-Inverting50 ns70ns35 ns50 ns70ns 35nsBUFFER OR INVERTER BASED PERIPHERAL DRIVERIndependent2Half-BridgeIGBT, N-Channel MOSFET290mA 600mA0.8V 2.5V-200V---NoNo SVHCRoHS Compliant-----------
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18 WeeksSurface MountSurface MountSOT-23-66-40°C~125°C TJTape & Reel (TR)1996Active1 (Unlimited)-EAR99828mW-10V~18V--NOT SPECIFIED----240mA----Non-Inverting-85ns40 ns-85ns 40nsBUFFER OR INVERTER BASED MOSFET DRIVERSingle-High-SideN-Channel MOSFET160mA 240mA0.8V 2.2V-200V1.3mm2.9mm1.6mm--ROHS3 CompliantLead Free---1----µHVIC™NOT SPECIFIED
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