IRS21850SPBF

Infineon Technologies IRS21850SPBF

Part Number:
IRS21850SPBF
Manufacturer:
Infineon Technologies
Ventron No:
3737229-IRS21850SPBF
Description:
IC DVR HIGH SIDE SGL 600V 8-SOIC
ECAD Model:
Datasheet:
IRS21850SPBF

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Specifications
Infineon Technologies IRS21850SPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRS21850SPBF.
  • Factory Lead Time
    17 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    8-SOIC (0.154, 3.90mm Width)
  • Number of Pins
    8
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Published
    1996
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    2 (1 Year)
  • Number of Terminations
    8
  • ECCN Code
    EAR99
  • Max Power Dissipation
    1.25W
  • Technology
    CMOS
  • Voltage - Supply
    10V~20V
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Number of Functions
    1
  • Supply Voltage
    15V
  • Base Part Number
    IRS21850SPBF
  • Output Voltage
    60mV
  • Max Output Current
    4A
  • Nominal Supply Current
    150μA
  • Power Dissipation
    1.25W
  • Output Current
    4A
  • Propagation Delay
    210 ns
  • Input Type
    Non-Inverting
  • Turn On Delay Time
    160 ns
  • Rise Time
    40ns
  • Fall Time (Typ)
    40 ns
  • Turn-Off Delay Time
    160 ns
  • Rise / Fall Time (Typ)
    15ns 15ns
  • Interface IC Type
    BUFFER OR INVERTER BASED PERIPHERAL DRIVER
  • Channel Type
    Single
  • Number of Drivers
    1
  • Driven Configuration
    High-Side
  • Gate Type
    IGBT, N-Channel MOSFET
  • Current - Peak Output (Source, Sink)
    4A 4A
  • Logic Voltage - VIL, VIH
    0.8V 2.5V
  • Built-in Protections
    TRANSIENT; UNDER VOLTAGE
  • High Side Voltage - Max (Bootstrap)
    600V
  • Height
    1.5mm
  • Length
    5mm
  • Width
    4mm
  • Radiation Hardening
    No
  • REACH SVHC
    No SVHC
  • RoHS Status
    RoHS Compliant
  • Lead Free
    Lead Free
Description
IRS21850SPBF Overview
For greater flexibility, its 8-SOIC (0.154, 3.90mm Width) package is used.Gate drivers is packaged in the way of Tube.A total of 1 drivers are integrated into its configuration.It's mounted on the way to Surface Mount.When the supply voltage is 10V~20V it is able to demonstrate its superiority.Gate type IGBT, N-Channel MOSFET is designed for it.This device allows temperatures in the range of -55°C~150°C TJ.The input type for this program is Non-Inverting.As a result of its configuration, it contains a maximum of 8 terminations.There are numerous related parts listed under its base part number IRS21850SPBF.The device is mounted using Surface Mount.As a result, it is configured with 8 pins when it is designed.Mosfet driver is specifically designed to opeate wMosfet driverh a supply voltage of 15V.Mosfet driver employs an interface chip called BUFFER OR INVERTER BASED PERIPHERAL DRIVER as Mosfet drivers interface chip.There is a maximum output current of 4A.Ideally, the high-side voltage should not exceed 600V.An output current of 4A is supported.Considering its maximum power dissipation, 1.25W shows its maximum capacity to transfer and conduct power loss without overheating.Mosfet gate drivers outputs 60mV as voltage.

IRS21850SPBF Features
Embedded in the Tube package
1 drivers
Employing a gate type of IGBT, N-Channel MOSFET
8 pins
High-side voltage - Max (Bootstrap) of 600V
Maximum power dissipation of 1.25W

IRS21850SPBF Applications
There are a lot of Infineon Technologies IRS21850SPBF gate drivers applications.

DC-DC Converters
AC-DC Inverters
Telecom switch mode power supplies
Portable Media Players
High-speed communications
Power factor correction (PFC) circuits
Active Clamp Flyback or Forward and Synchronous Rectifier
Isolated Gate Driver Supplies
White Goods - Air Conditioner, Washing Machine,
Dual-Battery Systems
IRS21850SPBF More Descriptions
IRS21850SPBF; MOSFET Power Driver; 4A; 10 to 20 V; Non-Inverting; 8-Pin SOIC, SOIC 8N, RoHSInfineon SCT
Tube IRS21850SPBF High-Side 1996 gate driver 40ns -55C~150C TJ 4A 4A 1.25W
Power MOSFET and IGBT Driver, Single Channel/Hi Side, 600V, 8-pin SOIC, Tube
MOSFET Operating temperature: -55... 150 °C Drive: logic level Housing type: SOIC-8 Polarity: N Power dissipation: 1.25 W
GATE DRIVER, HIGH SIDE, 600V, SOIC8; Device Type:IGBT / MOSFET; Module Configuration:High Side; Peak Output Current:4A; Supply Voltage Range:10V to 20V; Driver Case Style:SOIC; No. of Pins:8; Input Delay:160ns; Output Delay:160ns; Operating Temperature Range:-40°C to 125°C; SVHC:No SVHC (18-Jun-2012); Base Number:21850
600 V High Side Driver IC with typical 4 A source and 4 A sink currents in 8 Lead SOIC package for IGBTs and MOSFETs. | Summary of Features: Gate drive supply range from 10 V to 20 V; Undervoltage lockout for for VBS and VCC; 3.3 V and 5 V input logic compatible; Matched propagation delay for all channels; Tolerant to negative transient voltage
Product Comparison
The three parts on the right have similar specifications to IRS21850SPBF.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Operating Temperature
    Packaging
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Max Power Dissipation
    Technology
    Voltage - Supply
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Number of Functions
    Supply Voltage
    Base Part Number
    Output Voltage
    Max Output Current
    Nominal Supply Current
    Power Dissipation
    Output Current
    Propagation Delay
    Input Type
    Turn On Delay Time
    Rise Time
    Fall Time (Typ)
    Turn-Off Delay Time
    Rise / Fall Time (Typ)
    Interface IC Type
    Channel Type
    Number of Drivers
    Driven Configuration
    Gate Type
    Current - Peak Output (Source, Sink)
    Logic Voltage - VIL, VIH
    Built-in Protections
    High Side Voltage - Max (Bootstrap)
    Height
    Length
    Width
    Radiation Hardening
    REACH SVHC
    RoHS Status
    Lead Free
    JESD-609 Code
    Terminal Finish
    Subcategory
    Number of Outputs
    Power Supplies
    Max Supply Current
    Input Offset Voltage (Vos)
    Release Time
    Series
    Reflow Temperature-Max (s)
    View Compare
  • IRS21850SPBF
    IRS21850SPBF
    17 Weeks
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    8
    -55°C~150°C TJ
    Tube
    1996
    Obsolete
    2 (1 Year)
    8
    EAR99
    1.25W
    CMOS
    10V~20V
    DUAL
    GULL WING
    260
    1
    15V
    IRS21850SPBF
    60mV
    4A
    150μA
    1.25W
    4A
    210 ns
    Non-Inverting
    160 ns
    40ns
    40 ns
    160 ns
    15ns 15ns
    BUFFER OR INVERTER BASED PERIPHERAL DRIVER
    Single
    1
    High-Side
    IGBT, N-Channel MOSFET
    4A 4A
    0.8V 2.5V
    TRANSIENT; UNDER VOLTAGE
    600V
    1.5mm
    5mm
    4mm
    No
    No SVHC
    RoHS Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRS2011SPBF
    12 Weeks
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    8
    -40°C~150°C TJ
    Tube
    1996
    Active
    2 (1 Year)
    8
    EAR99
    625mW
    CMOS
    10V~20V
    DUAL
    GULL WING
    -
    1
    15V
    IRS2011SPBF
    220V
    1A
    300μA
    625mW
    1A
    80 ns
    Inverting
    20 ns
    40ns
    35 ns
    20 ns
    25ns 15ns
    BUFFER OR INVERTER BASED PERIPHERAL DRIVER
    Independent
    -
    Half-Bridge
    N-Channel MOSFET
    1A 1A
    0.8V 2.7V
    TRANSIENT; UNDER VOLTAGE
    -
    1.4986mm
    4.9784mm
    3.9878mm
    No
    No SVHC
    ROHS3 Compliant
    Lead Free
    e3
    Matte Tin (Sn)
    MOSFET Drivers
    2
    15V
    300μA
    200V
    60 ns
    -
    -
  • IRS2001MPBF
    -
    Surface Mount
    Surface Mount
    16-VFQFN Exposed Pad
    16
    -40°C~150°C TJ
    Tube
    2010
    Obsolete
    2 (1 Year)
    -
    EAR99
    2.08W
    -
    10V~20V
    -
    -
    -
    -
    -
    IRS2001MPBF
    15V
    600mA
    150μA
    2.08W
    600mA
    220 ns
    Non-Inverting
    50 ns
    70ns
    35 ns
    50 ns
    70ns 35ns
    BUFFER OR INVERTER BASED PERIPHERAL DRIVER
    Independent
    2
    Half-Bridge
    IGBT, N-Channel MOSFET
    290mA 600mA
    0.8V 2.5V
    -
    200V
    -
    -
    -
    No
    No SVHC
    RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRS20752LTRPBF
    18 Weeks
    Surface Mount
    Surface Mount
    SOT-23-6
    6
    -40°C~125°C TJ
    Tape & Reel (TR)
    1996
    Active
    1 (Unlimited)
    -
    EAR99
    828mW
    -
    10V~18V
    -
    -
    NOT SPECIFIED
    -
    -
    -
    -
    240mA
    -
    -
    -
    -
    Non-Inverting
    -
    85ns
    40 ns
    -
    85ns 40ns
    BUFFER OR INVERTER BASED MOSFET DRIVER
    Single
    -
    High-Side
    N-Channel MOSFET
    160mA 240mA
    0.8V 2.2V
    -
    200V
    1.3mm
    2.9mm
    1.6mm
    -
    -
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    1
    -
    -
    -
    -
    µHVIC™
    NOT SPECIFIED
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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