Infineon Technologies IRS2103PBF
- Part Number:
- IRS2103PBF
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 3838074-IRS2103PBF
- Description:
- IC DRIVER HALF-BRIDGE 8-DIP
- Datasheet:
- IRS2103PBF
Infineon Technologies IRS2103PBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRS2103PBF.
- Factory Lead Time12 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / Case8-DIP (0.300, 7.62mm)
- Number of Pins8
- Operating Temperature-40°C~150°C TJ
- PackagingTube
- Published1996
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations8
- ECCN CodeEAR99
- SubcategoryMOSFET Drivers
- Max Power Dissipation1W
- TechnologyCMOS
- Voltage - Supply10V~20V
- Terminal PositionDUAL
- Number of Functions1
- Supply Voltage15V
- Base Part NumberIRS2103PBF
- Number of Outputs2
- Output Voltage620V
- Max Output Current600mA
- Power Supplies15V
- Nominal Supply Current270μA
- Power Dissipation1W
- Output Current290mA
- Max Supply Current270μA
- Propagation Delay820 ns
- Input TypeInverting, Non-Inverting
- Turn On Delay Time60 ns
- Rise Time170ns
- Fall Time (Typ)90 ns
- Turn-Off Delay Time60 ns
- Release Time150 ns
- Rise / Fall Time (Typ)70ns 35ns
- Channel TypeIndependent
- Driven ConfigurationHalf-Bridge
- Gate TypeIGBT, N-Channel MOSFET
- Current - Peak Output (Source, Sink)290mA 600mA
- Logic Voltage - VIL, VIH0.8V 2.5V
- Built-in ProtectionsTRANSIENT; UNDER VOLTAGE
- High Side Voltage - Max (Bootstrap)600V
- Height4.9276mm
- Length10.8966mm
- Width7.11mm
- Radiation HardeningNo
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
IRS2103PBF Overview
The operating temperature of this device is quite impressive, ranging from -40°C to 150°C, making it suitable for a wide range of environments. The packaging for this device is in a tube form, providing convenience and ease of use for the user. The technology used for this device is CMOS, which ensures high performance and low power consumption. The voltage supply for this device ranges from 10V to 20V, providing a stable and reliable power source. With a maximum output current of 600mA and a nominal supply current of 270μA, this device is capable of handling various tasks efficiently. The turn on delay time for this device is only 60 ns, ensuring quick and precise operations. The channel type for this device is independent, allowing for flexibility and versatility in its usage. The current peak output can reach up to 290mA for sourcing and 600mA for sinking, providing ample power for demanding applications. Additionally, the high side voltage can go up to 600V, making it suitable for high voltage applications.
IRS2103PBF Features
Embedded in the Tube package
Employing a gate type of IGBT, N-Channel MOSFET
8 pins
High-side voltage - Max (Bootstrap) of 600V
Maximum power dissipation of 1W
IRS2103PBF Applications
There are a lot of Infineon Technologies IRS2103PBF gate drivers applications.
Active filtering
UPS systems
Industrial Motor Inverter - Power Tools, Robotics
AC-DC Inverters
Portable Media Players
Isolated switch mode power supplies (SMPS)
Motor controllers
Industrial Power Supplies
Dual-Battery Systems
Commercial air-conditioning (CAC)
The operating temperature of this device is quite impressive, ranging from -40°C to 150°C, making it suitable for a wide range of environments. The packaging for this device is in a tube form, providing convenience and ease of use for the user. The technology used for this device is CMOS, which ensures high performance and low power consumption. The voltage supply for this device ranges from 10V to 20V, providing a stable and reliable power source. With a maximum output current of 600mA and a nominal supply current of 270μA, this device is capable of handling various tasks efficiently. The turn on delay time for this device is only 60 ns, ensuring quick and precise operations. The channel type for this device is independent, allowing for flexibility and versatility in its usage. The current peak output can reach up to 290mA for sourcing and 600mA for sinking, providing ample power for demanding applications. Additionally, the high side voltage can go up to 600V, making it suitable for high voltage applications.
IRS2103PBF Features
Embedded in the Tube package
Employing a gate type of IGBT, N-Channel MOSFET
8 pins
High-side voltage - Max (Bootstrap) of 600V
Maximum power dissipation of 1W
IRS2103PBF Applications
There are a lot of Infineon Technologies IRS2103PBF gate drivers applications.
Active filtering
UPS systems
Industrial Motor Inverter - Power Tools, Robotics
AC-DC Inverters
Portable Media Players
Isolated switch mode power supplies (SMPS)
Motor controllers
Industrial Power Supplies
Dual-Battery Systems
Commercial air-conditioning (CAC)
IRS2103PBF More Descriptions
600 V half-bridge gate driver IC with shoot through protection, PDIP8, RoHSInfineon SCT
Tube IRS2103PBF Half-Bridge 1996 gate driver 170ns -40C~150C TJ 290mA 600mA 1W
IRS2103 Series 600 V 290 mA 20 V Supply Dual Half Bridge Driver - PDIP-8
Power MOSFET and IGBT Driver, 1/2 Bridge, 600V, 8-pin PDIP, Tube
MOSFET DRVR 600V 0.6A 2-OUT Hi/Lo Side Half Brdg Inv/Non-Inv 8-Pin PDIP Tube
Half Bridge Driver, Separate High and Low Side Inputs, Inverting Low Side Input, Fixed 520ns Deadtime in a 8-Lead package
IC, HALF BRIDGE DRIVER, DIP8, 2103; No. of Outputs:2; Output Current:290mA; Output Voltage:620V; Supply Voltage Range:10V to 20V; Driver Case Style:DIP; No. of Pins:8; Operating Temperature Range:-40°C to 125°C; SVHC:No SVHC (19-Dec-2011); Base Number:2103; Device Type:MOSFET; Operating Temperature Max:125°C; Operating Temperature Min:-40°C; Output Current Max:0.13A; Output Voltage Max:20V; Package / Case:DIP; Supply Voltage Max:20V; Supply Voltage Min:10V; Termination Type:Through Hole
600 V Half Bridge Driver IC with typical 0.29 A source and 0.6 A sink currents in 8 Lead PDIP package for IGBTs and MOSFETs. Also available in 8 lead SOIC. | Summary of Features: Floating gate driver designed for bootstrap operation; Fully operational to 600 V; Tolerant to negative transient voltage, dV/dt immune; Gate drive supply range from 10 V to 20 V; Undervoltage lockout; 3.3 V, 5 V, and 15 V logic input compatible; Cross-conduction prevention logic; Matched propagation delay for both channels; Internal set deadtime; High-side output in phase with HIN input; Low-side output out of phase with LIN input
Tube IRS2103PBF Half-Bridge 1996 gate driver 170ns -40C~150C TJ 290mA 600mA 1W
IRS2103 Series 600 V 290 mA 20 V Supply Dual Half Bridge Driver - PDIP-8
Power MOSFET and IGBT Driver, 1/2 Bridge, 600V, 8-pin PDIP, Tube
MOSFET DRVR 600V 0.6A 2-OUT Hi/Lo Side Half Brdg Inv/Non-Inv 8-Pin PDIP Tube
Half Bridge Driver, Separate High and Low Side Inputs, Inverting Low Side Input, Fixed 520ns Deadtime in a 8-Lead package
IC, HALF BRIDGE DRIVER, DIP8, 2103; No. of Outputs:2; Output Current:290mA; Output Voltage:620V; Supply Voltage Range:10V to 20V; Driver Case Style:DIP; No. of Pins:8; Operating Temperature Range:-40°C to 125°C; SVHC:No SVHC (19-Dec-2011); Base Number:2103; Device Type:MOSFET; Operating Temperature Max:125°C; Operating Temperature Min:-40°C; Output Current Max:0.13A; Output Voltage Max:20V; Package / Case:DIP; Supply Voltage Max:20V; Supply Voltage Min:10V; Termination Type:Through Hole
600 V Half Bridge Driver IC with typical 0.29 A source and 0.6 A sink currents in 8 Lead PDIP package for IGBTs and MOSFETs. Also available in 8 lead SOIC. | Summary of Features: Floating gate driver designed for bootstrap operation; Fully operational to 600 V; Tolerant to negative transient voltage, dV/dt immune; Gate drive supply range from 10 V to 20 V; Undervoltage lockout; 3.3 V, 5 V, and 15 V logic input compatible; Cross-conduction prevention logic; Matched propagation delay for both channels; Internal set deadtime; High-side output in phase with HIN input; Low-side output out of phase with LIN input
The three parts on the right have similar specifications to IRS2103PBF.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeSubcategoryMax Power DissipationTechnologyVoltage - SupplyTerminal PositionNumber of FunctionsSupply VoltageBase Part NumberNumber of OutputsOutput VoltageMax Output CurrentPower SuppliesNominal Supply CurrentPower DissipationOutput CurrentMax Supply CurrentPropagation DelayInput TypeTurn On Delay TimeRise TimeFall Time (Typ)Turn-Off Delay TimeRelease TimeRise / Fall Time (Typ)Channel TypeDriven ConfigurationGate TypeCurrent - Peak Output (Source, Sink)Logic Voltage - VIL, VIHBuilt-in ProtectionsHigh Side Voltage - Max (Bootstrap)HeightLengthWidthRadiation HardeningREACH SVHCRoHS StatusLead FreeJESD-609 CodeTerminal FinishTerminal FormPeak Reflow Temperature (Cel)Reflow Temperature-Max (s)Qualification StatusInterface IC TypeNumber of DriversOutput Current Flow DirectionSeriesView Compare
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IRS2103PBF12 WeeksThrough HoleThrough Hole8-DIP (0.300, 7.62mm)8-40°C~150°C TJTube1996Active1 (Unlimited)8EAR99MOSFET Drivers1WCMOS10V~20VDUAL115VIRS2103PBF2620V600mA15V270μA1W290mA270μA820 nsInverting, Non-Inverting60 ns170ns90 ns60 ns150 ns70ns 35nsIndependentHalf-BridgeIGBT, N-Channel MOSFET290mA 600mA0.8V 2.5VTRANSIENT; UNDER VOLTAGE600V4.9276mm10.8966mm7.11mmNoNo SVHCROHS3 CompliantLead Free-----------
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-Surface MountSurface Mount14-SOIC (0.154, 3.90mm Width)14-40°C~150°C TJTube1996Obsolete2 (1 Year)14EAR99Peripheral Drivers1WCMOS10V~20VDUAL-14VIRS210614SPBF-20V600mA-120μA1W--230 nsNon-Inverting230 ns100ns35 ns230 ns-100ns 35nsIndependentHalf-BridgeIGBT, N-Channel MOSFET290mA 600mA0.8V 2.5V-600V1.5mm8.74mm3.99mm-No SVHCRoHS CompliantLead Freee3Tin (Sn)GULL WING26030Not QualifiedBUFFER OR INVERTER BASED PERIPHERAL DRIVER2SOURCE SINK-
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-Surface MountSurface Mount16-VFQFN Exposed Pad16-40°C~150°C TJTube2010Obsolete2 (1 Year)-EAR99-2.08W-10V~20V---IRS2001MPBF-15V600mA-150μA2.08W600mA-220 nsNon-Inverting50 ns70ns35 ns50 ns-70ns 35nsIndependentHalf-BridgeIGBT, N-Channel MOSFET290mA 600mA0.8V 2.5V-200V---NoNo SVHCRoHS Compliant-------BUFFER OR INVERTER BASED PERIPHERAL DRIVER2--
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18 WeeksSurface MountSurface MountSOT-23-66-40°C~125°C TJTape & Reel (TR)1996Active1 (Unlimited)-EAR99-828mW-10V~18V----1-240mA------Non-Inverting-85ns40 ns--85ns 40nsSingleHigh-SideN-Channel MOSFET160mA 240mA0.8V 2.2V-200V1.3mm2.9mm1.6mm--ROHS3 CompliantLead Free---NOT SPECIFIEDNOT SPECIFIED-BUFFER OR INVERTER BASED MOSFET DRIVER--µHVIC™
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