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IRGBC30F

Infineon Technologies IRGBC30F

Part Number:
IRGBC30F
Manufacturer:
Infineon Technologies
Ventron No:
2496198-IRGBC30F
Description:
IGBT FAST 600V 31A TO-220AB
ECAD Model:
Datasheet:
IRGBC30F

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Specifications
Infineon Technologies IRGBC30F technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRGBC30F.
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-3
  • Surface Mount
    NO
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Published
    1996
  • JESD-609 Code
    e3
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    Matte Tin (Sn) - with Nickel (Ni) barrier
  • Additional Feature
    FAST
  • Subcategory
    Insulated Gate BIP Transistors
  • Terminal Position
    SINGLE
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • JESD-30 Code
    R-PSFM-T3
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Input Type
    Standard
  • Power - Max
    100W
  • Transistor Application
    MOTOR CONTROL
  • Polarity/Channel Type
    N-CHANNEL
  • JEDEC-95 Code
    TO-220AB
  • Voltage - Collector Emitter Breakdown (Max)
    600V
  • Current - Collector (Ic) (Max)
    31A
  • Power Dissipation-Max (Abs)
    100W
  • Vce(on) (Max) @ Vge, Ic
    2.1V @ 15V, 17A
  • Gate-Emitter Voltage-Max
    20V
  • Gate-Emitter Thr Voltage-Max
    5.5V
  • RoHS Status
    Non-RoHS Compliant
Description
IRGBC30F IGBT Description
This Insulated Gate Bipolar Transistors (IGBT) IRGBC30F from Infineon have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. It provides substantial benefits to a host of high-voltage, high-current applications. It has low switching losses and low EMI.

IRGBC30F IGBT Features
Optimized for medium operating frequency ( 1 to 10kHz) Collector-Emitter Breakdown Voltage: 600 V Gate-Emitter Voltage: ±20 V Low switching losses Continuous Collector Current: 31 A (@ 25℃)

IRGBC30F IGBT Applications
Solar Inverter General Motor Driver PFC Oil Pump PTC Heater Welder HVAC Systems Switching Device UPS
IRGBC30F More Descriptions
IGBT FAST 600V 31A TO-220AB
OEMs, CMs ONLY (NO BROKERS)
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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