IRFI4020H-117P

Infineon Technologies IRFI4020H-117P

Part Number:
IRFI4020H-117P
Manufacturer:
Infineon Technologies
Ventron No:
2474024-IRFI4020H-117P
Description:
MOSFET 2N-CH 200V 9.1A TO-220FP
ECAD Model:
Datasheet:
IRFI4020H-117P

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Specifications
Infineon Technologies IRFI4020H-117P technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRFI4020H-117P.
  • Factory Lead Time
    12 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-5 Full Pack
  • Number of Pins
    5
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Published
    2006
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    5
  • ECCN Code
    EAR99
  • Resistance
    100MOhm
  • Subcategory
    FET General Purpose Power
  • Max Power Dissipation
    21W
  • Terminal Position
    SINGLE
  • Number of Elements
    2
  • Element Configuration
    Dual
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    21W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    8.4 ns
  • FET Type
    2 N-Channel (Dual)
  • Transistor Application
    AMPLIFIER
  • Rds On (Max) @ Id, Vgs
    100m Ω @ 5.5A, 10V
  • Vgs(th) (Max) @ Id
    4.9V @ 100μA
  • Input Capacitance (Ciss) (Max) @ Vds
    1240pF @ 25V
  • Gate Charge (Qg) (Max) @ Vgs
    29nC @ 10V
  • Rise Time
    8ns
  • Drain to Source Voltage (Vdss)
    200V
  • Fall Time (Typ)
    4 ns
  • Turn-Off Delay Time
    18 ns
  • Continuous Drain Current (ID)
    9.1A
  • Threshold Voltage
    4.9V
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    200V
  • Pulsed Drain Current-Max (IDM)
    36A
  • Avalanche Energy Rating (Eas)
    130 mJ
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Recovery Time
    110 ns
  • FET Feature
    Standard
  • Nominal Vgs
    4.9 V
  • Height
    9.02mm
  • Length
    10.6172mm
  • Width
    4.826mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
IRFI4020H-117P Overview
This product is manufactured by Infineon Technologies and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet IRFI4020H-117P or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of IRFI4020H-117P. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
IRFI4020H-117P More Descriptions
200V Dual N-Channel Digital Audio HEXFET Power MOSFET in a TO-220 Full-Pak(Iso) package.
MOSFET, Dual N Ch., Digital Audio, 5-PIN TO-220, 200V, 80MOHM, 9.1A, 6.8 NC
Transistor MOSFET Array Dual N-CH 200V 9.1A 5-Pin TO-220FP Tube
Dual N-Channel 200 V 100 mOhm 29 nC HEXFET® Power Mosfet - TO-220-5
IRFI4020H-117P Infineon /IR Mosfet Array Dual N-Channel 200V TO-220FP-5RoHS
MOSFET Operating temperature: -55...150 °C Housing type: TO-220-5 Polarity: N Power dissipation: 21 W
MOSFET, NN CH, 200V, TO-220 F-PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 9.1A; Drain Source Voltage Vds: 200V; On Resistance Rds(on): 0.08ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4.9V; Power Dissipation Pd: 21W; Transistor Case Style: TO-220FP; No. of Pins: 5Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018); Continuous Drain Current Id, N Channel: 9.1A; Current Id Max: 9.1A; Drain Source Voltage Vds, N Channel: 200V; Module Configuration: Dual; On Resistance Rds(on), N Channel: 0.08ohm; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C
Benefits: RoHS Compliant; Low RDS(on); Dual N-Channel MOSFET; Integrated Half Bridge package; Optimized for Class-D Audio Amplifier Applications; Low Qrr for better THD and improved efficiency; Low Qg and Qsw for Better THD and Improved Efficiency | Target Applications: Class D Audio
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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