Infineon Technologies IRFI4020H-117P
- Part Number:
- IRFI4020H-117P
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2474024-IRFI4020H-117P
- Description:
- MOSFET 2N-CH 200V 9.1A TO-220FP
- Datasheet:
- IRFI4020H-117P
Infineon Technologies IRFI4020H-117P technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRFI4020H-117P.
- Factory Lead Time12 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-5 Full Pack
- Number of Pins5
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- Published2006
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations5
- ECCN CodeEAR99
- Resistance100MOhm
- SubcategoryFET General Purpose Power
- Max Power Dissipation21W
- Terminal PositionSINGLE
- Number of Elements2
- Element ConfigurationDual
- Operating ModeENHANCEMENT MODE
- Power Dissipation21W
- Case ConnectionDRAIN
- Turn On Delay Time8.4 ns
- FET Type2 N-Channel (Dual)
- Transistor ApplicationAMPLIFIER
- Rds On (Max) @ Id, Vgs100m Ω @ 5.5A, 10V
- Vgs(th) (Max) @ Id4.9V @ 100μA
- Input Capacitance (Ciss) (Max) @ Vds1240pF @ 25V
- Gate Charge (Qg) (Max) @ Vgs29nC @ 10V
- Rise Time8ns
- Drain to Source Voltage (Vdss)200V
- Fall Time (Typ)4 ns
- Turn-Off Delay Time18 ns
- Continuous Drain Current (ID)9.1A
- Threshold Voltage4.9V
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage200V
- Pulsed Drain Current-Max (IDM)36A
- Avalanche Energy Rating (Eas)130 mJ
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Recovery Time110 ns
- FET FeatureStandard
- Nominal Vgs4.9 V
- Height9.02mm
- Length10.6172mm
- Width4.826mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
IRFI4020H-117P Overview
This product is manufactured by Infineon Technologies and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet IRFI4020H-117P or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of IRFI4020H-117P. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by Infineon Technologies and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet IRFI4020H-117P or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of IRFI4020H-117P. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
IRFI4020H-117P More Descriptions
200V Dual N-Channel Digital Audio HEXFET Power MOSFET in a TO-220 Full-Pak(Iso) package.
MOSFET, Dual N Ch., Digital Audio, 5-PIN TO-220, 200V, 80MOHM, 9.1A, 6.8 NC
Transistor MOSFET Array Dual N-CH 200V 9.1A 5-Pin TO-220FP Tube
Dual N-Channel 200 V 100 mOhm 29 nC HEXFET® Power Mosfet - TO-220-5
IRFI4020H-117P Infineon /IR Mosfet Array Dual N-Channel 200V TO-220FP-5RoHS
MOSFET Operating temperature: -55...150 °C Housing type: TO-220-5 Polarity: N Power dissipation: 21 W
MOSFET, NN CH, 200V, TO-220 F-PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 9.1A; Drain Source Voltage Vds: 200V; On Resistance Rds(on): 0.08ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4.9V; Power Dissipation Pd: 21W; Transistor Case Style: TO-220FP; No. of Pins: 5Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018); Continuous Drain Current Id, N Channel: 9.1A; Current Id Max: 9.1A; Drain Source Voltage Vds, N Channel: 200V; Module Configuration: Dual; On Resistance Rds(on), N Channel: 0.08ohm; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C
Benefits: RoHS Compliant; Low RDS(on); Dual N-Channel MOSFET; Integrated Half Bridge package; Optimized for Class-D Audio Amplifier Applications; Low Qrr for better THD and improved efficiency; Low Qg and Qsw for Better THD and Improved Efficiency | Target Applications: Class D Audio
MOSFET, Dual N Ch., Digital Audio, 5-PIN TO-220, 200V, 80MOHM, 9.1A, 6.8 NC
Transistor MOSFET Array Dual N-CH 200V 9.1A 5-Pin TO-220FP Tube
Dual N-Channel 200 V 100 mOhm 29 nC HEXFET® Power Mosfet - TO-220-5
IRFI4020H-117P Infineon /IR Mosfet Array Dual N-Channel 200V TO-220FP-5RoHS
MOSFET Operating temperature: -55...150 °C Housing type: TO-220-5 Polarity: N Power dissipation: 21 W
MOSFET, NN CH, 200V, TO-220 F-PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 9.1A; Drain Source Voltage Vds: 200V; On Resistance Rds(on): 0.08ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4.9V; Power Dissipation Pd: 21W; Transistor Case Style: TO-220FP; No. of Pins: 5Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018); Continuous Drain Current Id, N Channel: 9.1A; Current Id Max: 9.1A; Drain Source Voltage Vds, N Channel: 200V; Module Configuration: Dual; On Resistance Rds(on), N Channel: 0.08ohm; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C
Benefits: RoHS Compliant; Low RDS(on); Dual N-Channel MOSFET; Integrated Half Bridge package; Optimized for Class-D Audio Amplifier Applications; Low Qrr for better THD and improved efficiency; Low Qg and Qsw for Better THD and Improved Efficiency | Target Applications: Class D Audio
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