Infineon Technologies IRF9910TRPBF
- Part Number:
- IRF9910TRPBF
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2473858-IRF9910TRPBF
- Description:
- MOSFET 2N-CH 20V 10A/12A 8-SOIC
- ECAD Model:
-
- Datasheet:
- IRF9910TRPBF
Infineon Technologies IRF9910TRPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF9910TRPBF.
- Factory Lead Time12 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Number of Pins8
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesHEXFET®
- Published2004
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations8
- ECCN CodeEAR99
- Resistance13.4MOhm
- Terminal FinishMatte Tin (Sn)
- SubcategoryFET General Purpose Power
- Voltage - Rated DC20V
- Max Power Dissipation2W
- Terminal FormGULL WING
- Current Rating10A
- Base Part NumberIRF9910PBF
- Number of Elements2
- Element ConfigurationDual
- Operating ModeENHANCEMENT MODE
- Power Dissipation2W
- FET Type2 N-Channel (Dual)
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs9.3m Ω @ 12A, 10V
- Vgs(th) (Max) @ Id2.55V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds900pF @ 10V
- Current - Continuous Drain (Id) @ 25°C10A 12A
- Gate Charge (Qg) (Max) @ Vgs11nC @ 4.5V
- Continuous Drain Current (ID)10A
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage20V
- Avalanche Energy Rating (Eas)33 mJ
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- FET FeatureLogic Level Gate
- Nominal Vgs2.55 V
- Height1.4986mm
- Length4.9784mm
- Width3.9878mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
IRF9910TRPBF Description
Fifth Generation HEXFETs from International Rectifier have extraordinarily low on-resistance per silicon area thanks to cutting-edge manufacturing methods. This feature, along with the rapid switching speed and ruggedized device architecture that HEXFET Power MOSFETs are known for, provides the designe with an incredibly efficient and reliable device for usage in a number of applications. The SO-8's improved thermal properties and multiple-die capacity make it the perfect choice for a variety of power applications. This adjustment was possible because to the usage of a leadframe that was custom made. With this invention, multiple devices can be used while substantially less board area is needed. The package is designed for use with wave soldering or vapor phase infrared technologies.
IRF9910TRPBF Features
4.5V VGS with Very Low RDS(on)
Gate Fee is Minimal
Voltage and Current of Fully Characterized Avalanches
Gate Rating Maximum 20V VGS
IRF9910TRPBF Applications
Dual SO-8 MOSFET for POL converters in desktop, servers, graphics cards, gaming consoles, and set-top box
free of lead
Fifth Generation HEXFETs from International Rectifier have extraordinarily low on-resistance per silicon area thanks to cutting-edge manufacturing methods. This feature, along with the rapid switching speed and ruggedized device architecture that HEXFET Power MOSFETs are known for, provides the designe with an incredibly efficient and reliable device for usage in a number of applications. The SO-8's improved thermal properties and multiple-die capacity make it the perfect choice for a variety of power applications. This adjustment was possible because to the usage of a leadframe that was custom made. With this invention, multiple devices can be used while substantially less board area is needed. The package is designed for use with wave soldering or vapor phase infrared technologies.
IRF9910TRPBF Features
4.5V VGS with Very Low RDS(on)
Gate Fee is Minimal
Voltage and Current of Fully Characterized Avalanches
Gate Rating Maximum 20V VGS
IRF9910TRPBF Applications
Dual SO-8 MOSFET for POL converters in desktop, servers, graphics cards, gaming consoles, and set-top box
free of lead
IRF9910TRPBF More Descriptions
Transistor MOSFET Array Dual N-CH 20V 10A/12A 8-Pin SOIC T/R - Tape and Reel
Dual N-Channel 20 V 18.3/11.3 mOhm 11/23 nC HEXFET® Power Mosfet - SOIC-8
Power Field-Effect Transistor, 10A I(D), 20V, 0.0134ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
Benefits: RoHS Compliant; Low RDS(ON) at 4.5V VGS; Very Low Gate Charge; Fully Characterized Avalanche Voltage and Current; Dual N-Channel MOSFET
N CHANNEL MOSFET, 20V, 10A; Transistor P; N CHANNEL MOSFET, 20V, 10A; Transistor Polarity:N Channel; Continuous Drain Current Id:10A; Drain Source Voltage Vds:20V; On Resistance Rds(on):18.3mohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs Typ:2.55V; No. of Pins:8
Dual N-Channel 20 V 18.3/11.3 mOhm 11/23 nC HEXFET® Power Mosfet - SOIC-8
Power Field-Effect Transistor, 10A I(D), 20V, 0.0134ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
Benefits: RoHS Compliant; Low RDS(ON) at 4.5V VGS; Very Low Gate Charge; Fully Characterized Avalanche Voltage and Current; Dual N-Channel MOSFET
N CHANNEL MOSFET, 20V, 10A; Transistor P; N CHANNEL MOSFET, 20V, 10A; Transistor Polarity:N Channel; Continuous Drain Current Id:10A; Drain Source Voltage Vds:20V; On Resistance Rds(on):18.3mohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs Typ:2.55V; No. of Pins:8
Popular Search Part Number
Related Keywords
Search Tags
Latest News
-
29 January 2024
TQP3M9028 RF Amplifier Alternatives, Market Trend, Applications and Other Details
Ⅰ. TQP3M9028 descriptionⅡ. Manufacturer of TQP3M9028Ⅲ. Specifications of TQP3M9028Ⅳ. Market trend of TQP3M9028Ⅴ. How to choose TQP3M9028?Ⅵ. Absolute maximum ratings of TQP3M9028Ⅶ. Where is TQP3M9028 used?TQP3M9028 is a... -
30 January 2024
AD7606BSTZ Converter Technical Parameters, Characteristics, Working Principle and Package
Ⅰ. Overview of AD7606BSTZⅡ. Technical parameters of AD7606BSTZⅢ. Characteristics of AD7606BSTZⅣ. Absolute maximum ratings of AD7606BSTZⅤ. How does AD7606BSTZ work?Ⅵ. Package of AD7606BSTZⅦ. What are the applications of... -
30 January 2024
LSM6DS3TR Alternatives, Features, Specifications, LSM6DS3TR vs LSM6DS3 and Applications
Ⅰ. Introduction to LSM6DS3TRⅡ. What are the features of LSM6DS3TR?Ⅲ. Absolute maximum ratings of LSM6DS3TRⅣ. Specifications of LSM6DS3TRⅤ. What are the advantages and disadvantages of LSM6DS3TR?Ⅵ. What is... -
31 January 2024
ISO1050DUBR Characteristics, Application Fields, Layout Guidelines and More
Ⅰ. What is a CAN transceiver?Ⅱ. Overview of ISO1050DUBRⅢ. Technical parameters of ISO1050DUBRⅣ. Characteristics of ISO1050DUBRⅤ. ISO1050DUBR symbol, footprint and pin configurationⅥ. Application fields of ISO1050DUBRⅦ. Layout guidelines...
Help you to save your cost and time.
Reliable package for your goods.
Fast Reliable Delivery to save time.
Quality premium after-sale service.