Infineon Technologies IR2106STRPBF

HIGH AND LOW SIDE DRIVER, SOFTTURN-ON, NONINVERTING INPUTS 8-LEAD SOIC | Infineon IR2106STRPBF
600 V high-side and low-side gate driver IC, SOIC 8N, RoHSInfineon SCT
MOSFET and Power Driver 350mA 2-OUT Hi/Lo Side Non-Inverting 8-Pin SOIC T/RAvnet Japan
Tape & Reel (TR) IR2106SPBF Half-Bridge 1996 gate driver 150ns 50ns -40C~150C TJ 200mA 350mA 0.8V 2.9V
IR2106S Series Dual 25 V Surface Mount High and Low Side Driver - SOIC-8
Surface Mount Tape & Reel (TR) Active EAR99 Gate Drivers ICs Non-Inverting 2 600V V 8-SOIC (0.154, 3.90mm Width) IR2106SPBF Half-Bridge
Drivers IC; Device Type:IGBT/MOSFET; No. of Outputs:2; Output Voltage:620V; Output Current:350mA; Power Dissipation, Pd:0.625W; Supply Voltage Min:10V; Supply Voltage Max:25V; Termination Type:SMD; Package/Case:8-SOIC; No. of Pins:8 ;RoHS Compliant: Yes
600 V High and Low Side Driver IC with typical 0.2 A source and 0.35 A sink currents in 8 Lead SOIC package for IGBTs and MOSFETs. Also available in 8 Lead PDIP, 14 Lead SOIC, and 14 Lead PDIP. | Summary of Features: Floating channel designed for bootstrap operation; Fully operational to 600 V; Tolerant to negative transient voltage; dV/dt immune; Gate drive supply range from 10 to 20 V; Undervoltage lockout; 3.3 V, 5 V, and 15 V logic input compatible; Matched propagation delay for both channels; Logic and power ground /- 5 V offset; Lower di/dt gate driver for better noise immunity; Outputs in phase with inputs
The IR2106(4)(S) are high voltage,high speed power MOSFET and IGBT drivers with independent highand low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output,down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600 volts.