Infineon Technologies IR2101PBF
- Part Number:
- IR2101PBF
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 3837987-IR2101PBF
- Description:
- IC DRIVER HIGH/LOW SIDE 8DIP
- Datasheet:
- IR2101PBF
Infineon Technologies IR2101PBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IR2101PBF.
- Factory Lead Time12 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / Case8-DIP (0.300, 7.62mm)
- Number of Pins8
- Operating Temperature-40°C~150°C TJ
- PackagingTube
- Published1996
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations8
- TerminationThrough Hole
- ECCN CodeEAR99
- SubcategoryMOSFET Drivers
- Max Power Dissipation1W
- TechnologyCMOS
- Voltage - Supply10V~20V
- Terminal PositionDUAL
- Number of Functions1
- Supply Voltage15V
- Base Part NumberIR2101PBF
- Number of Outputs2
- Output Voltage620V
- Max Output Current360mA
- Power Supplies15V
- Nominal Supply Current270μA
- Power Dissipation1W
- Output Current210mA
- Max Supply Current270μA
- Propagation Delay220 ns
- Input TypeNon-Inverting
- Turn On Delay Time50 ns
- Max Output Voltage20V
- Rise Time170ns
- Fall Time (Typ)90 ns
- Turn-Off Delay Time150 ns
- Min Output Voltage10V
- Rise / Fall Time (Typ)100ns 50ns
- Channel TypeIndependent
- Output Peak Current Limit-Nom0.36A
- Driven ConfigurationHalf-Bridge
- Gate TypeIGBT, N-Channel MOSFET
- Current - Peak Output (Source, Sink)210mA 360mA
- High Side DriverYES
- Logic Voltage - VIL, VIH0.8V 3V
- High Side Voltage - Max (Bootstrap)600V
- Height4.9276mm
- Length10.8966mm
- Width7.11mm
- Radiation HardeningNo
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
IR2101PBF Overview
Infineon Technologies is a well-known brand in the electronics industry, and one of their products is a PMIC - Gate Drivers chip. This chip falls under the PMIC - Gate Drivers category, which is a crucial component in power management for electronic devices. The mounting type for this chip is Through Hole, which refers to the method of attaching the chip to a circuit board. This type of mounting is commonly used for larger components and offers a more secure connection. The packaging for this chip is Tube, which is a common method of packaging for electronic components, providing protection and organization during transportation and storage. The part status for this chip is Active, indicating that it is currently in production and available for purchase. In terms of technical specifications, this PMIC - Gate Drivers chip has a Moisture Sensitivity Level (MSL) of 1 (Unlimited), meaning it has no restrictions on exposure to moisture during handling and assembly. This feature is important for ensuring the reliability and performance of the chip. The output voltage for this chip is 620V, which is the maximum voltage that can be delivered to the load. The nominal supply current for this chip is 270μA, indicating the amount of current required for the chip to function properly. The propagation delay for this chip is 220 ns, which refers to the time it takes for the output signal to reach a certain level after the input signal has changed. Furthermore, this PMIC - Gate Drivers chip has an output peak current limit of 0.36A, which is the maximum amount of current that can be delivered to the load. The high side driver feature of this chip allows for efficient control of the power supply to the load. However, it is important to note that this chip does not have radiation hardening, which means it is not designed to withstand high levels of radiation. This may be a consideration for certain applications in environments with high levels of radiation. In conclusion, the Infineon Technologies PMIC - Gate Drivers chip offers a range of features and specifications that make it a reliable and efficient component for power management in electronic devices. Its active status, through hole mounting type, and tube packaging make it easily accessible and convenient for use in various applications. However, the lack of radiation hardening may limit its use in certain environments. Overall, this chip provides excellent performance and is a valuable addition to any electronic circuit.
IR2101PBF Features
Embedded in the Tube package
Employing a gate type of IGBT, N-Channel MOSFET
8 pins
High-side voltage - Max (Bootstrap) of 600V
Maximum power dissipation of 1W
IR2101PBF Applications
There are a lot of Infineon Technologies IR2101PBF gate drivers applications.
Head-up and Head mounted displays
Broadcast equipment
3-Phase Motor Inverter Driver
Portable Media Players
White Goods - Air Conditioner, Washing Machine,
AC-DC Inverters
Solar inverters
Automotive Applications
Line drivers
DC/DC converters
Infineon Technologies is a well-known brand in the electronics industry, and one of their products is a PMIC - Gate Drivers chip. This chip falls under the PMIC - Gate Drivers category, which is a crucial component in power management for electronic devices. The mounting type for this chip is Through Hole, which refers to the method of attaching the chip to a circuit board. This type of mounting is commonly used for larger components and offers a more secure connection. The packaging for this chip is Tube, which is a common method of packaging for electronic components, providing protection and organization during transportation and storage. The part status for this chip is Active, indicating that it is currently in production and available for purchase. In terms of technical specifications, this PMIC - Gate Drivers chip has a Moisture Sensitivity Level (MSL) of 1 (Unlimited), meaning it has no restrictions on exposure to moisture during handling and assembly. This feature is important for ensuring the reliability and performance of the chip. The output voltage for this chip is 620V, which is the maximum voltage that can be delivered to the load. The nominal supply current for this chip is 270μA, indicating the amount of current required for the chip to function properly. The propagation delay for this chip is 220 ns, which refers to the time it takes for the output signal to reach a certain level after the input signal has changed. Furthermore, this PMIC - Gate Drivers chip has an output peak current limit of 0.36A, which is the maximum amount of current that can be delivered to the load. The high side driver feature of this chip allows for efficient control of the power supply to the load. However, it is important to note that this chip does not have radiation hardening, which means it is not designed to withstand high levels of radiation. This may be a consideration for certain applications in environments with high levels of radiation. In conclusion, the Infineon Technologies PMIC - Gate Drivers chip offers a range of features and specifications that make it a reliable and efficient component for power management in electronic devices. Its active status, through hole mounting type, and tube packaging make it easily accessible and convenient for use in various applications. However, the lack of radiation hardening may limit its use in certain environments. Overall, this chip provides excellent performance and is a valuable addition to any electronic circuit.
IR2101PBF Features
Embedded in the Tube package
Employing a gate type of IGBT, N-Channel MOSFET
8 pins
High-side voltage - Max (Bootstrap) of 600V
Maximum power dissipation of 1W
IR2101PBF Applications
There are a lot of Infineon Technologies IR2101PBF gate drivers applications.
Head-up and Head mounted displays
Broadcast equipment
3-Phase Motor Inverter Driver
Portable Media Players
White Goods - Air Conditioner, Washing Machine,
AC-DC Inverters
Solar inverters
Automotive Applications
Line drivers
DC/DC converters
IR2101PBF More Descriptions
Tube IR2101PBF Half-Bridge 1996 gate driver 170ns -40C~150C TJ 210mA 360mA 1W
Driver; 20 V (Max.); 625.3 V (Max.); 100 mV (Max.); 100 mV (Max.); 50 ns (Typ.)
600 V high-side and low-side gate driver IC, PDIP8, RoHSInfineon SCT
Driver 600V 0.36A 2-OUT High and Low Side Non-Inv 8-Pin PDIP Tube
IR2101 Series 270 mA 20 V Supply Quad High And Low Side Driver - PDIP-8
MOSFET Driver IC; MOSFET Driver Type:Dual Drivers, Low & High Side; High Side MOSFET Drive Type:Bootstrapped; Load Voltage Max:600V; Peak Output High Current, Ioh:270mA; Rise Time:100ns; Fall Time:50ns; Load Capacitance:1000pF RoHS Compliant: No
Type = High Side / Type = Low Side / Outputs = 2 / Configuration = Half Bridge / Rise Time ns = 100 / Fall Time ns = 50 / Output Current mA = 210 / Output Current mA = 360 / Supply Voltage Min. V = 10 / Supply Voltage Max. V = 20 / Operating Temperature Min. °C = -40 / Operating Temperature Max. °C = 125 / Package Type = DIP / Pins = 8 / Mounting Type = Through Hole / Packaging = Tube / Length mm = 10.9 / Width mm = 7.1 / Height mm = 5.33 / Reflow Temperature Max. °C = 300
600 V High and Low Side Driver IC with typical 0.21 A source and 0.36 A sink currents in 8 Lead PDIP package for IGBTs and MOSFETs. Also available in 8 Lead SOIC. | Summary of Features: Floating channel designed for bootstrap operation; Fully operational to 600 V; Tolerant to negative transient voltage; dV/dt immune; Gate drive supply range from 10 to 20 V; Undervoltage lockout; 3.3 V, 5 V, and 15 V logic input compatible; Matched propagation delay for both channels; Outputs in phase with inputs (IR2101) or out of phase with inputs (IR2102)
DRIVER, MOSFET HIGH/LOW, 2101, DIP8; Device Type:High Side / Low Side; Module Configuration:High Side / Low Side; Peak Output Current:360mA; Input Delay:160ns; Output Delay:150ns; Supply Voltage Range:10V to 20V; Driver Case Style:DIP; No. of Pins:8; Operating Temperature Range:-40°C to 125°C; SVHC:No SVHC (19-Dec-2011); Base Number:2101; IC Generic Number:2101; Logic Function Number:2101; No. of Outputs:2; Offset Voltage:600V; Operating Temperature Max:125°C; Operating Temperature Min:-40°C; Output Current:210mA; Output Sink Current Min:270mA; Output Source Current Min:130mA; Output Voltage:620V; Output Voltage Max:20V; Output Voltage Min:10V; Package / Case:DIP; Power Dissipation Pd:1W; Supply Voltage Max:20V; Supply Voltage Min:10V; Termination Type:Through Hole; Turn Off Time:150ns; Turn On Time:160ns
Driver; 20 V (Max.); 625.3 V (Max.); 100 mV (Max.); 100 mV (Max.); 50 ns (Typ.)
600 V high-side and low-side gate driver IC, PDIP8, RoHSInfineon SCT
Driver 600V 0.36A 2-OUT High and Low Side Non-Inv 8-Pin PDIP Tube
IR2101 Series 270 mA 20 V Supply Quad High And Low Side Driver - PDIP-8
MOSFET Driver IC; MOSFET Driver Type:Dual Drivers, Low & High Side; High Side MOSFET Drive Type:Bootstrapped; Load Voltage Max:600V; Peak Output High Current, Ioh:270mA; Rise Time:100ns; Fall Time:50ns; Load Capacitance:1000pF RoHS Compliant: No
Type = High Side / Type = Low Side / Outputs = 2 / Configuration = Half Bridge / Rise Time ns = 100 / Fall Time ns = 50 / Output Current mA = 210 / Output Current mA = 360 / Supply Voltage Min. V = 10 / Supply Voltage Max. V = 20 / Operating Temperature Min. °C = -40 / Operating Temperature Max. °C = 125 / Package Type = DIP / Pins = 8 / Mounting Type = Through Hole / Packaging = Tube / Length mm = 10.9 / Width mm = 7.1 / Height mm = 5.33 / Reflow Temperature Max. °C = 300
600 V High and Low Side Driver IC with typical 0.21 A source and 0.36 A sink currents in 8 Lead PDIP package for IGBTs and MOSFETs. Also available in 8 Lead SOIC. | Summary of Features: Floating channel designed for bootstrap operation; Fully operational to 600 V; Tolerant to negative transient voltage; dV/dt immune; Gate drive supply range from 10 to 20 V; Undervoltage lockout; 3.3 V, 5 V, and 15 V logic input compatible; Matched propagation delay for both channels; Outputs in phase with inputs (IR2101) or out of phase with inputs (IR2102)
DRIVER, MOSFET HIGH/LOW, 2101, DIP8; Device Type:High Side / Low Side; Module Configuration:High Side / Low Side; Peak Output Current:360mA; Input Delay:160ns; Output Delay:150ns; Supply Voltage Range:10V to 20V; Driver Case Style:DIP; No. of Pins:8; Operating Temperature Range:-40°C to 125°C; SVHC:No SVHC (19-Dec-2011); Base Number:2101; IC Generic Number:2101; Logic Function Number:2101; No. of Outputs:2; Offset Voltage:600V; Operating Temperature Max:125°C; Operating Temperature Min:-40°C; Output Current:210mA; Output Sink Current Min:270mA; Output Source Current Min:130mA; Output Voltage:620V; Output Voltage Max:20V; Output Voltage Min:10V; Package / Case:DIP; Power Dissipation Pd:1W; Supply Voltage Max:20V; Supply Voltage Min:10V; Termination Type:Through Hole; Turn Off Time:150ns; Turn On Time:160ns
The three parts on the right have similar specifications to IR2101PBF.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminationECCN CodeSubcategoryMax Power DissipationTechnologyVoltage - SupplyTerminal PositionNumber of FunctionsSupply VoltageBase Part NumberNumber of OutputsOutput VoltageMax Output CurrentPower SuppliesNominal Supply CurrentPower DissipationOutput CurrentMax Supply CurrentPropagation DelayInput TypeTurn On Delay TimeMax Output VoltageRise TimeFall Time (Typ)Turn-Off Delay TimeMin Output VoltageRise / Fall Time (Typ)Channel TypeOutput Peak Current Limit-NomDriven ConfigurationGate TypeCurrent - Peak Output (Source, Sink)High Side DriverLogic Voltage - VIL, VIHHigh Side Voltage - Max (Bootstrap)HeightLengthWidthRadiation HardeningREACH SVHCRoHS StatusLead FreeSurface MountTerminal FormPeak Reflow Temperature (Cel)Reflow Temperature-Max (s)JESD-30 CodeQualification StatusOutput CharacteristicsOutput PolarityInput CharacteristicsNumber of DriversHeight Seated (Max)Supplier Device PackageView Compare
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IR2101PBF12 WeeksThrough HoleThrough Hole8-DIP (0.300, 7.62mm)8-40°C~150°C TJTube1996Active1 (Unlimited)8Through HoleEAR99MOSFET Drivers1WCMOS10V~20VDUAL115VIR2101PBF2620V360mA15V270μA1W210mA270μA220 nsNon-Inverting50 ns20V170ns90 ns150 ns10V100ns 50nsIndependent0.36AHalf-BridgeIGBT, N-Channel MOSFET210mA 360mAYES0.8V 3V600V4.9276mm10.8966mm7.11mmNoNo SVHCROHS3 CompliantLead Free-------------
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--Surface Mount8-SOIC (0.154, 3.90mm Width)--40°C~150°C TJTube1996Obsolete1 (Unlimited)8-EAR99--CMOS10V~20VDUAL115VIR2102S---------Inverting------100ns 50nsIndependent0.36AHalf-BridgeIGBT, N-Channel MOSFET210mA 360mAYES0.8V 3V600V-4.9mm3.9mm--Non-RoHS Compliant-YESGULL WINGNOT SPECIFIEDNOT SPECIFIEDR-PDSO-G8Not QualifiedTOTEM-POLEINVERTEDSCHMITT TRIGGER21.75mm-
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--Surface Mount14-SOIC (0.154, 3.90mm Width)--40°C~150°C TJTube2000Obsolete1 (Unlimited)------10V~20V---IR21074S---------Inverting------150ns 50nsIndependent-Half-BridgeIGBT, N-Channel MOSFET200mA 350mA-0.8V 2.7V600V-----Non-RoHS Compliant----------2-14-SOIC
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--Surface Mount8-SOIC (0.154, 3.90mm Width)--40°C~150°C TJTube1996Obsolete1 (Unlimited)8-EAR99--CMOS10V~20VDUAL115VIR2104S---------Non-Inverting------100ns 50nsSynchronous0.36AHalf-BridgeIGBT, N-Channel MOSFET210mA 360mAYES0.8V 3V600V-4.9mm3.9mm--Non-RoHS Compliant-YESGULL WINGNOT SPECIFIEDNOT SPECIFIEDR-PDSO-G8Not QualifiedTOTEM-POLETRUESCHMITT TRIGGER21.75mm-
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