IPP048N06L G

Infineon Technologies IPP048N06L G

Part Number:
IPP048N06L G
Manufacturer:
Infineon Technologies
Ventron No:
3586839-IPP048N06L G
Description:
MOSFET N-CH 60V 100A TO-220
ECAD Model:
Datasheet:
IPB,IPP048N06L G

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Specifications
Infineon Technologies IPP048N06L G technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IPP048N06L G.
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-3
  • Surface Mount
    NO
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tube
  • Series
    OptiMOS™
  • Published
    2007
  • JESD-609 Code
    e3
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    MATTE TIN
  • Additional Feature
    AVALANCHE RATED
  • Subcategory
    FET General Purpose Power
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    SINGLE
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Reach Compliance Code
    compliant
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Pin Count
    3
  • JESD-30 Code
    R-PSFM-T3
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Power Dissipation-Max
    300W Tc
  • Operating Mode
    ENHANCEMENT MODE
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    4.7m Ω @ 100A, 10V
  • Vgs(th) (Max) @ Id
    2V @ 270μA
  • Input Capacitance (Ciss) (Max) @ Vds
    7600pF @ 30V
  • Current - Continuous Drain (Id) @ 25°C
    100A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    225nC @ 10V
  • Drain to Source Voltage (Vdss)
    60V
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Vgs (Max)
    ±20V
  • JEDEC-95 Code
    TO-220AB
  • Drain Current-Max (Abs) (ID)
    100A
  • Drain-source On Resistance-Max
    0.0047Ohm
  • Pulsed Drain Current-Max (IDM)
    400A
  • DS Breakdown Voltage-Min
    60V
  • Avalanche Energy Rating (Eas)
    810 mJ
  • RoHS Status
    RoHS Compliant
Description
IPP048N06L G Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 810 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 7600pF @ 30V.There is no drain current on this device since the maximum continuous current it can conduct is 100A.There is a peak drain current of 400A, its maximum pulsed drain current.In order for DS breakdown voltage to remain above 60V, it should remain above the 60V level.The transistor must receive a 60V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (4.5V 10V).

IPP048N06L G Features
the avalanche energy rating (Eas) is 810 mJ
based on its rated peak drain current 400A.
a 60V drain to source voltage (Vdss)


IPP048N06L G Applications
There are a lot of Infineon Technologies
IPP048N06L G applications of single MOSFETs transistors.


DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
IPP048N06L G More Descriptions
Trans MOSFET N-CH 60V 100A 3-Pin(3 Tab) TO-220
Compliant Through Hole 24 ns Lead Free 25 ns 4.7 mΩ TO-220-3 100 A
CAP CER 43PF 50V NP0 0603
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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