Infineon Technologies IPP048N06L G
- Part Number:
- IPP048N06L G
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 3586839-IPP048N06L G
- Description:
- MOSFET N-CH 60V 100A TO-220
- Datasheet:
- IPB,IPP048N06L G
Infineon Technologies IPP048N06L G technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IPP048N06L G.
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Surface MountNO
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- SeriesOptiMOS™
- Published2007
- JESD-609 Codee3
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishMATTE TIN
- Additional FeatureAVALANCHE RATED
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionSINGLE
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Reach Compliance Codecompliant
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Pin Count3
- JESD-30 CodeR-PSFM-T3
- Qualification StatusNot Qualified
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max300W Tc
- Operating ModeENHANCEMENT MODE
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs4.7m Ω @ 100A, 10V
- Vgs(th) (Max) @ Id2V @ 270μA
- Input Capacitance (Ciss) (Max) @ Vds7600pF @ 30V
- Current - Continuous Drain (Id) @ 25°C100A Tc
- Gate Charge (Qg) (Max) @ Vgs225nC @ 10V
- Drain to Source Voltage (Vdss)60V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- JEDEC-95 CodeTO-220AB
- Drain Current-Max (Abs) (ID)100A
- Drain-source On Resistance-Max0.0047Ohm
- Pulsed Drain Current-Max (IDM)400A
- DS Breakdown Voltage-Min60V
- Avalanche Energy Rating (Eas)810 mJ
- RoHS StatusRoHS Compliant
IPP048N06L G Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 810 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 7600pF @ 30V.There is no drain current on this device since the maximum continuous current it can conduct is 100A.There is a peak drain current of 400A, its maximum pulsed drain current.In order for DS breakdown voltage to remain above 60V, it should remain above the 60V level.The transistor must receive a 60V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (4.5V 10V).
IPP048N06L G Features
the avalanche energy rating (Eas) is 810 mJ
based on its rated peak drain current 400A.
a 60V drain to source voltage (Vdss)
IPP048N06L G Applications
There are a lot of Infineon Technologies
IPP048N06L G applications of single MOSFETs transistors.
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 810 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 7600pF @ 30V.There is no drain current on this device since the maximum continuous current it can conduct is 100A.There is a peak drain current of 400A, its maximum pulsed drain current.In order for DS breakdown voltage to remain above 60V, it should remain above the 60V level.The transistor must receive a 60V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (4.5V 10V).
IPP048N06L G Features
the avalanche energy rating (Eas) is 810 mJ
based on its rated peak drain current 400A.
a 60V drain to source voltage (Vdss)
IPP048N06L G Applications
There are a lot of Infineon Technologies
IPP048N06L G applications of single MOSFETs transistors.
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
IPP048N06L G More Descriptions
Trans MOSFET N-CH 60V 100A 3-Pin(3 Tab) TO-220
Compliant Through Hole 24 ns Lead Free 25 ns 4.7 mΩ TO-220-3 100 A
CAP CER 43PF 50V NP0 0603
Compliant Through Hole 24 ns Lead Free 25 ns 4.7 mΩ TO-220-3 100 A
CAP CER 43PF 50V NP0 0603
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