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IMT2AT108

Rohm Semiconductor IMT2AT108

Part Number:
IMT2AT108
Manufacturer:
Rohm Semiconductor
Ventron No:
2461411-IMT2AT108
Description:
TRANS 2PNP 50V 0.15A 6SMT
ECAD Model:
Datasheet:
IMT2AT108

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Specifications
Rohm Semiconductor IMT2AT108 technical specifications, attributes, parameters and parts with similar specifications to Rohm Semiconductor IMT2AT108.
  • Factory Lead Time
    10 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    SC-74, SOT-457
  • Number of Pins
    6
  • Transistor Element Material
    SILICON
  • Operating Temperature
    150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2004
  • JESD-609 Code
    e1
  • Pbfree Code
    yes
  • Part Status
    Not For New Designs
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    6
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin/Silver/Copper (Sn/Ag/Cu)
  • HTS Code
    8541.21.00.75
  • Subcategory
    Other Transistors
  • Voltage - Rated DC
    -50V
  • Max Power Dissipation
    300mW
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Current Rating
    -150mA
  • Time@Peak Reflow Temperature-Max (s)
    10
  • Base Part Number
    MT2
  • Pin Count
    6
  • Number of Elements
    2
  • Polarity
    PNP
  • Element Configuration
    Dual
  • Power Dissipation
    300mW
  • Transistor Application
    AMPLIFIER
  • Gain Bandwidth Product
    140MHz
  • Transistor Type
    2 PNP (Dual)
  • Collector Emitter Voltage (VCEO)
    500mV
  • Max Collector Current
    150mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    120 @ 1mA 6V
  • Current - Collector Cutoff (Max)
    100nA ICBO
  • Vce Saturation (Max) @ Ib, Ic
    500mV @ 5mA, 50mA
  • Collector Emitter Breakdown Voltage
    50V
  • Transition Frequency
    140MHz
  • Max Breakdown Voltage
    50V
  • Collector Base Voltage (VCBO)
    -60V
  • Emitter Base Voltage (VEBO)
    -6V
  • hFE Min
    120
  • VCEsat-Max
    0.5 V
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
IMT2AT108 Overview
This product is manufactured by Rohm Semiconductor and belongs to the category of Transistors - Bipolar (BJT) - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet IMT2AT108 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of IMT2AT108. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
IMT2AT108 More Descriptions
IMT2A Series 50 V 150 mA SMT Dual PNP General Purpose Transistor - SC-74
TRANSISTOR DUAL SC-74 PNP/PNP; Transistor Type:General Purpose; Transistor Polarity:Dual PNP; Collector-to-Emitter Breakdown Voltage:50V; Current Ic Continuous a Max:50mA; Voltage, Vce Sat Max:500mV; Power Dissipation:300mW; Min ;RoHS Compliant: Yes
TRANSISTOR DUAL SC-74 PNP/PNP; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: 50V; Power Dissipation Pd: 300mW; DC Collector Current: -150mA; DC Current Gain hFE: 120hFE; Transistor Case Style: SOT-457; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Collector Emitter Saturation Voltage Vce(on): 500mV; Current Ic Continuous a Max: 50mA; Gain Bandwidth ft Typ: 140MHz; Hfe Min: 120; Module Configuration: Dual; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Transistor Type: General Purpose; Transition Frequency ft: 140MHz
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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